ETC IS42S16100-10T

ISSI
IS42S16100
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
®
NOVEMBER
2001
FEATURES
DESCRIPTION
• Clock frequency: 166, 143, 100 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously
and independently
• Dual internal bank controlled by A11 (bank
select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II
ISSI's 16Mb Synchronous DRAM IS42S16100 is organized
as a 524,288-word x 16-bit x 2-bank for improved
performance. The synchronous DRAMs achieve high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
PIN CONFIGURATIONS
50-Pin TSOP (Type II)
VCC
1
50
GND
I/O0
2
49
I/O15
I/O1
3
48
I/O14
GNDQ
4
47
GNDQ
I/O2
5
46
I/O13
I/O3
6
45
I/O12
VCCQ
7
44
VCCQ
I/O4
8
43
I/O11
I/O5
9
42
I/O10
GNDQ
10
41
GNDQ
I/O6
11
40
I/O9
I/O7
12
39
I/O8
VCCQ
13
38
VCCQ
LDQM
14
37
NC
WE
15
36
UDQM
CAS
16
35
CLK
RAS
17
34
CKE
CS
18
33
NC
A11
19
32
A9
A10
20
31
A8
A0
21
30
A7
A1
22
29
A6
A2
23
28
A5
A3
24
27
A4
VCC
25
26
GND
PIN DESCRIPTIONS
A0-A11
Address Input
A0-A10
Row Address Input
A11
Bank Select Address
A0-A7
Column Address Input
I/O0 to I/O15
Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
1
ISSI
IS42S16100
®
PIN FUNCTIONS
Pin No.
Symbol
Type
20 to 24
27 to 32
A0-A10
Input Pin
19
A11
Input Pin
16
CAS
Input Pin
34
CKE
Input Pin
35
CLK
Input Pin
18
CS
Input Pin
2, 3, 5, 6, 8, 9, 11 I/O0 to
12, 39, 40, 42, 43, I/O15
45, 46, 48, 49
14, 36
LDQM,
UDQM
2
I/O Pin
Input Pin
17
RAS
Input Pin
15
WE
Input Pin
7, 13, 38, 44
1, 25
4, 10, 41, 47
26, 50
VCCQ
VCC
GNDQ
GND
Power Supply Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
Function (In Detail)
A0 to A10 are address inputs. A0-A10 are used as row address inputs during active
command input and A0-A7 as column address inputs during read or write command
input. A10 is also used to determine the precharge mode during other commands. If
A10 is LOW during precharge command, the bank selected by A11 is precharged,
but if A10 is HIGH, both banks will be precharged.
When A10 is HIGH in read or write command cycle, the precharge starts automatically after the burst access.
These signals become part of the OP CODE during mode register set command
input.
A11 is the bank selection signal. When A11 is LOW, bank 0 is selected and when
high, bank 1 is selected. This signal becomes part of the OP CODE during mode
register set command input.
CAS, in conjunction with the RAS and WE, forms the device command. See the
"Command Truth Table" item for details on device commands.
The CKE input determines whether the CLK input is enabled within the device.
When is CKE HIGH, the next rising edge of the CLK signal will be valid, and when
LOW, invalid. When CKE is LOW, the device will be in either the power-down mode,
the clock suspend mode, or the self refresh mode. The CKE is an asynchronous input.
CLK is the master clock input for this device. Except for CKE, all inputs to this device
are acquired in synchronization with the rising edge of this pin.
The CS input determines whether command input is enabled within the device.
Command input is enabled when CS is LOW, and disabled with CS is HIGH. The
device remains in the previous state when CS is HIGH.
I/O0 to I/O15 are I/O pins. I/O through these pins can be controlled in byte units
using the LDQM and UDQM pins.
LDQM and UDQM control the lower and upper bytes of the I/O buffers. In read
mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW,
the corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go
to the HIGH impedance state when LDQM/UDQM is HIGH. This function corresponds to OE in conventional DRAMs. In write mode, LDQM and UDQM control the
input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is
enabled, and data can be written to the device. When LDQM or UDQM is HIGH,
input data is masked and cannot be written to the device.
RAS, in conjunction with CAS and WE, forms the device command. See the
"Command Truth Table" item for details on device commands.
WE, in conjunction with RAS and CAS, forms the device command. See the
"Command Truth Table" item for details on device commands.
VCCQ is the output buffer power supply.
VCC is the device internal power supply.
GNDQ is the output buffer ground.
GND is the device internal ground.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
CLK
CKE
CS
RAS
CAS
WE
A11
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
11
ROW
ADDRESS
BUFFER
11
ROW DECODER
FUNCTIONAL BLOCK DIAGRAM
MEMORY CELL
ARRAY
2048
BANK 0
DQM
11
CONTROLLER
11
ROW
ADDRESS
LATCH
MULTIPLEXER
REFRESH
COUNTER
11
COLUMN
ADDRESS BUFFER
REFRESH
ROW
ADDRESS
BUFFER
11
ROW DECODER
SELF
BURST COUNTER
8
REFRESH
CONTROLLER
COLUMN
ADDRESS LATCH
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN
BUFFER
SENSE AMP I/O GATE
256
16
16
I/O 0-15
COLUMN DECODER
8
256
DATA OUT
BUFFER
SENSE AMP I/O GATE
16
2048
MEMORY CELL
ARRAY
16
Vcc/VccQ
GND/GNDQ
BANK 1
S16BLK.eps
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
3
ISSI
IS42S16100
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
VCC MAX
VCCQ MAX
VIN
VOUT
PD MAX
I CS
TOPR
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Com
Ind.
Storage Temperature
TSTG
Rating
Unit
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
1
50
0 to +70
-40 to +85
–55 to +150
V
V
V
V
W
mA
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)
Symbol
VCC, VCCQ
VIH
VIL
Parameter
Min.
Typ.
Max.
Unit
Supply Voltage
Input High Voltage(3)
Input Low Voltage(4)
3.0
2.0
-0.3
3.3
—
—
3.6
VDD + 0.3
+0.8
V
V
V
CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
CIN1
CIN2
CI/O
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
Typ.
Max.
Unit
—
—
—
4
4
5
pF
pF
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
3. VIH (max) = VCCQ + 2.0V with a pulse width ≤ 3 ns.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
IIL
Input Leakage Current
IOL
VOH
VOL
ICC1
ICC2P
ICC2PS
ICC3N
ICC3NS
ICC4
ICC5
ICC6
Test Condition
0V ≤ VIN ≤ VCC, with pins other than
the tested pin at 0V
Output Leakage Current
Output is disabled, 0V ≤ VOUT ≤ VCC
Output High Voltage Level IOUT = –2 mA
Output Low Voltage Level IOUT = +2 mA
Operating Current(1,2)
One Bank Operation,
CAS latency = 3
Burst Length=1
Com.
tRC ≥ tRC (min.)
Ind.
IOUT = 0mA
Com.
Ind.
Precharge Standby Current CKE ≤ VIL (MAX)
tCK = tCK (MIN) Com.
Ind.
(In Power-Down Mode)
tCK = ∞
Com.
Ind.
Active Standby Current
CKE ≥ VIH (MIN)
tCK = tCK (MIN)
(In Non Power-Down Mode)
tCK = ∞
Com.
Ind.
Operating Current
tCK = tCK (MIN)
CAS latency = 3
(In Burst Mode)(1)
IOUT = 0mA
Com.
Ind.
Com.
Ind.
CAS latency = 2
Com.
Ind.
Com.
Ind.
Auto-Refresh Current
tRC = tRC (MIN)
CAS latency = 3
Com.
Ind.
Com.
Ind.
CAS latency = 2
Com.
Ind.
Com.
Ind.
Self-Refresh Current
CKE ≤ 0.2V
Speed
-6
-7
-7
-10
-10
—
—
—
—
—
—
—
-6
-7
-7
-10
-10
-6
-7
-7
-10
-10
-6
-7
-7
-10
-10
-6
-7
-7
-10
-10
—
Min.
–5
Max.
5
Unit
µA
–5
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
—
0.4
190
160
180
120
140
3
4
2
3
40
30
30
210
180
200
140
160
210
180
200
140
160
210
180
120
140
160
210
180
200
140
160
1
µA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
5
ISSI
IS42S16100
®
AC CHARACTERISTICS(1,2,3)
-6
Symbol
Parameter
tCK3
tCK2
tAC3
tAC2
tCHI
tCL
tOH3
tOH2
tLZ
tHZ3
tHZ2
tDS
tDH
tAS
tAH
tCKS
tCKH
tCKA
tCS
tCH
tRC
tRAS
tRP
tRCD
tRRD
tDPL3
Clock Cycle Time
tDPL2
tDAL3
tDAL2
tT
tREF
Access Time From CLK(4)
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time(5)
Min.
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
Input Data Setup Time
Input Data Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
CKE to CLK Recovery Delay Time
Command Setup Time (CS, RAS, CAS, WE, DQM)
Command Hold Time (CS, RAS, CAS, WE, DQM)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
Input Data To Precharge
CAS Latency = 3
Command Delay time
CAS Latency = 2
Input Data To Active / Refresh
CAS Latency = 3
Command Delay time (During Auto-Precharge)
CAS Latency = 2
Transition Time
Refresh Cycle Time (4096)
-7
Max.
6
—
8
—
—
5.5
—
6
2
—
2
—
2.5
—
2.5
—
0
—
—
5.5
—
6
2
—
1
—
2
—
1
—
2
—
1
—
1CLK+3
—
2
—
1
—
60
—
42
100,000
18
—
16
—
12
—
1CLK
—
1CLK
1CLK+tRP
Min.
-10
Max.
Min.
Max. Units
7
—
10
— ns
8.6
—
10
— ns
—
6
—
7 ns
—
6
—
9 ns
2.5
—
3.5
— ns
2.5
—
3.5
— ns
2.5
—
2.5
— ns
2.5
—
2.5
— ns
0
—
0
— ns
—
6
—
7 ns
—
6
—
9 ns
2
—
2.5
— ns
1
—
1
— ns
2
—
2.5
— ns
1
—
1
— ns
2
—
2.5
— ns
1
—
1
— ns
1CLK+3
—
1CLK+3
— ns
2
—
2.5
— ns
1
—
1
— ns
63
—
70
— ns
42
100,000
50
100,000 ns
20
—
20
— ns
16
—
20
— ns
14
—
20
— ns
1CLK
—
1CLK
— ns
—
—
1CLK
1CLK+tRP
—
—
1CLK
1CLK+tRP
—
—
ns
ns
1CLK+tRP —
1
10
—
128
1CLK+tRP
1
—
—
10
128
1CLK+tRP
1
—
— ns
10 ns
128 ms
Notes:
1. When power is first applied, memory operation should be started 100 µs after Vcc and VccQ reach their stipulated voltages. Also
note that the power-on sequence must be executed before starting memory operation.
2. Measured with tT = 1 ns.
3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between VIH (min.) and VIL
(max.).
4. Access time is measured at 1.4V with the load shown in the figure below.
5. The time tHZ (max.) is defined as the time required for the output voltage to transition by ± 200 mV from VOH (min.) or VOL (max.)
when the output is in the high impedance state.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
SYMBOL
PARAMETER
—
—
t CAC
t RCD
t RAC
t RC
tRAS
t RP
t RRD
t CCD
Clock Cycle Time
Operating Frequency
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (tRCD + tCAC)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
t DPL
t DAL
t RBD
tWBD
tRQL
tWDL
tPQL
tQMD
t DMD
t MCD
-6
-7
-10.
UNITS
6
166
3
3
6
9
6
3
3
1
7
143
3
3
6
9
6
3
3
1
10
100
3
3
6
9
6
3
3
1
ns
MHz
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
1
4
1
4
1
4
cycle
cycle
3
3
3
cycle
0
0
0
cycle
3
3
3
cycle
0
0
0
cycle
–2
2
0
2
–1
2
0
2
–1
2
0
2
cycle
cycle
cycle
cycle
AC TEST CONDITIONS (Input/Output Reference Level: 1.4V)
Input
tCK
tCHI
tCL
2.8V
CLK
1.4V
0.0V
tCS
tCH
2.8V
INPUT
1.4V
0.0V
tAC
tOH
OUTPUT
1.4V
Output Load
1.4V
50 Ω
+1.4V
I/O
50 pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
7
ISSI
IS42S16100
®
COMMANDS
Active Command
Read Command
CLK
CKE
CLK
HIGH
CKE
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
ROW
A10
ROW
HIGH
COLUMN (1)
A0-A9
AUTO PRECHARGE
A10
NO PRECHARGE
BANK 1
A11
BANK 1
A11
BANK 0
Write Command
Precharge Command
CLK
CKE
BANK 0
CLK
HIGH
CKE
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
COLUMN(1)
A0-A9
BANK 0 AND BANK 1
AUTO PRECHARGE
A10
A10
NO PRECHARGE
BANK 0 OR BANK 1
BANK 1
A11
8
BANK 1
A11
BANK 0
Notes:
1. A8-A9 = Don't Care.
HIGH
BANK 0
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
COMMANDS (cont.)
No-Operation Command
CLK
CKE
Device Deselect Command
CLK
HIGH
CKE
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
A0-A9
A10
A10
A11
A11
Mode Register Set Command
CLK
CKE
HIGH
Auto-Refresh Command
CLK
HIGH
CKE
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
OP-CODE
A0-A9
A10
OP-CODE
A10
A11
OP-CODE
A11
HIGH
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
9
ISSI
IS42S16100
®
COMMANDS (cont.)
Self-Refresh Command
Power Down Command
CLK
CLK
CKE
CKE
CS
CS
NOP
RAS
RAS
NOP
CAS
CAS
NOP
WE
WE
A0-A9
A0-A9
A10
A10
A11
A11
Clock Suspend Command
CLK
CKE
NOP
Burst Stop Command
CLK
BANK(S) ACTIVE
CKE
CS
NOP
CS
RAS
NOP
RAS
CAS
NOP
CAS
WE
ALL BANKS IDLE
NOP
HIGH
WE
A0-A9
A0-A9
A10
A10
A11
A11
Don't Care
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Mode Register Set Command
(CS, RAS, CAS, WE = LOW)
The IS42S16100 product incorporates a register that
defines the device operating mode. This command
functions as a data input pin that loads this register from
the pins A0 to A11. When power is first applied, the
stipulated power-on sequence should be executed and
then the IS42S16100 should be initialized by executing a
mode register set command.
When the A10 pin is HIGH, this command functions as a
read with auto-precharge command. After the burst read
completes, the bank selected by pin A11 is precharged.
When the A10 pin is LOW, the bank selected by the A11
pin remains in the activated state after the burst read
completes.
Note that the mode register set command can be executed
only when both banks are in the idle state (i.e. deactivated).
Write Command
Another command cannot be executed after a mode
register set command until after the passage of the period
tMCD, which is the period required for mode register set
command execution.
Active Command
(CS, RAS = LOW, CAS, WE= HIGH)
The IS42S16100 includes two banks of 4096 rows each.
This command selects one of the two banks according to
the A11 pin and activates the row selected by the pins A0
to A10.
This command corresponds to the fall of the RAS signal
from HIGH to LOW in conventional DRAMs.
Precharge Command
(CS, RAS, WE = LOW, CAS = HIGH)
This command starts precharging the bank selected by
pins A10 and A11. When A10 is HIGH, both banks are
precharged at the same time. When A10 is LOW, the bank
selected by A11 is precharged. After executing this
command, the next command for the selected bank(s) is
executed after passage of the period tRP, which is the
period required for bank precharging.
(CS, CAS, WE = LOW, RAS = HIGH)
When burst write mode has been selected with the mode
register set command, this command selects the bank
specified by the A11 pin and starts a burst write operation
at the start address specified by pins A0 to A9. This first
data must be input to the I/O pins in the cycle in which this
command.
The selected bank must be activated before executing this
command.
When A10 pin is HIGH, this command functions as a write
with auto-precharge command. After the burst write
completes, the bank selected by pin A11 is precharged.
When the A10 pin is low, the bank selected by the A11 pin
remains in the activated state after the burst write
completes.
After the input of the last burst write data, the application
must wait for the write recovery period (tDPL, tDAL) to elapse
according to CAS latency.
Auto-Refresh Command
(CS, RAS, CAS = LOW, WE, CKE = HIGH)
This command executes the auto-refresh operation. The
row address and bank to be refreshed are automatically
generated during this operation.
This command corresponds to the RAS signal from LOW
to HIGH in conventional DRAMs
Both banks must be placed in the idle state before executing
this command.
Read Command
The stipulated period (tRC) is required for a single refresh
operation, and no other commands can be executed
during this period.
(CS, CAS = LOW, RAS, WE = HIGH)
This command selects the bank specified by the A11 pin
and starts a burst read operation at the start address
specified by pins A0 to A9. Data is output following CAS
latency.
The selected bank must be activated before executing this
command.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
The device goes to the idle state after the internal refresh
operation completes.
This command must be executed at least 4096 times
every 128 ms.
This command corresponds to CBR auto-refresh in
conventional DRAMs.
11
ISSI
IS42S16100
®
Self-Refresh Command
Power-Down Command
(CS, RAS, CAS, CKE = LOW, WE = HIGH)
(CKE = LOW)
This command executes the self-refresh operation. The
row address to be refreshed, the bank, and the refresh
interval are generated automatically internally during this
operation. The self-refresh operation is started by dropping
the CKE pin from HIGH to LOW. The self-refresh operation
continues as long as the CKE pin remains LOW and there
is no need for external control of any other pins. The
self-refresh operation is terminated by raising the CKE
pin from LOW to HIGH. The next command cannot be
executed until the device internal recovery period (tRC)
has elapsed. After the self-refresh, since it is impossible
to determine the address of the last row to be refreshed,
an auto-refresh should immediately be performed for all
addresses (4096 cycles).
When both banks are in the idle (inactive) state, or when
at least one of the banks is not in the idle (inactive) state,
this command can be used to suppress device power
dissipation by reducing device internal operations to the
absolute minimum. Power-down mode is started by
dropping the CKE pin from HIGH to LOW. Power-down
mode continues as long as the CKE pin is held low. All pins
other than the CKE pin are invalid and none of the other
commands can be executed in this mode. The power-down
operation is terminated by raising the CKE pin from LOW
to HIGH. The next command cannot be executed until the
recovery period (tCKA) has elapsed.
Both banks must be placed in the idle state before
executing this command.
Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tREF). Thus
the maximum time that power-down mode can be held is
just under the refresh cycle time.
Burst Stop Command
(CS, WE, = LOW, RAS, CAS = HIGH)
The command forcibly terminates burst read and write
operations. When this command is executed during a
burst read operation, data output stops after the CAS
latency period has elapsed.
No Operation
(CS, = LOW, RAS, CAS, WE = HIGH)
This command has no effect on the device.
Device Deselect Command
(CS = HIGH)
This command does not select the device for an object of
operation. In other words, it performs no operation with
respect to the device.
12
Clock Suspend
(CKE = LOW)
This command can be used to stop the device internal
clock temporarily during a read or write cycle. Clock
suspend mode is started by dropping the CKE pin from
HIGH to LOW. Clock suspend mode continues as long as
the CKE pin is held LOW. All input pins other than the CKE
pin are invalid and none of the other commands can be
executed in this mode. Also note that the device internal
state is maintained. Clock suspend mode is terminated by
raising the CKE pin from LOW to HIGH, at which point
device operation restarts. The next command cannot be
executed until the recovery period (tCKA) has elapsed.
Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tREF). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
COMMAND TRUTH TABLE(1,2)
Symbol
MRS
REF
SREF
PRE
PALL
ACT
WRIT
WRITA
READ
READA
BST
NOP
DESL
SBY
ENB
MASK
CKE
n-1
n
Command
Mode Register Set(3,4)
Auto-Refresh(5)
Self-Refresh(5,6)
Precharge Selected Bank
Precharge Both Banks
Bank Activate(7)
Write
Write With Auto-Precharge(8)
Read(8)
Read With Auto-Precharge(8)
Burst Stop(9)
No Operation
Device Deselect
Clock Suspend / Standby Mode
Data Write / Output Enable
Data Mask / Output Disable
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
CS
RAS CAS
L
L
L
L
L
L
L
L
L
L
L
L
H
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
WE DQM
L
L
L
H
H
H
L
L
L
L
H
H
X
X
X
X
L
H
H
L
L
H
L
L
H
H
L
H
X
X
X
X
A11 A10
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
X
X
BS
X
BS
BS
BS
BS
BS
X
X
X
X
X
X
A9-A0
OP CODE
X
X
X
X
L
X
H
X
Row Row
L Column(18)
H Column(18)
L Column(18)
H Column(18)
X
X
X
X
X
X
X
X
X
X
X
X
I/On
X
HIGH-Z
HIGH-Z
X
X
X
X
X
X
X
X
X
X
X
Active
HIGH-Z
DQM TRUTH TABLE(1,2)
Symbol
Command
ENB
MASK
ENBU
ENBL
MASKU
MASKL
Data Write / Output Enable
Data Mask / Output Disable
Upper Byte Data Write / Output Enable
Lower Byte Data Write / Output Enable
Upper Byte Data Mask / Output Disable
Lower Byte Data Mask / Output Disable
CKE
n-1
n
H
H
H
H
H
H
DQM
UPPER LOWER
X
X
X
X
X
X
L
H
L
X
H
X
L
H
X
L
X
H
CKE TRUTH TABLE(1,2)
Symbol
Command
Current State
SPND
—
—
REF
SELF
SELFX
Start Clock Suspend Mode
Clock Suspend
Terminate Clock Suspend Mode
Auto-Refresh
Start Self-Refresh Mode
Terminate Self-Refresh Mode
Active
Other States
Clock Suspend
Idle
Idle
Self-Refresh
PDWN
Start Power-Down Mode
Idle
—
Terminate Power-Down Mode
Power-Down
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
CKE
n-1
n
H
L
L
H
H
L
L
H
H
L
L
L
H
H
L
H
H
L
L
H
CS
X
X
X
L
L
L
H
L
H
X
RAS CAS
X
X
X
L
L
H
X
H
X
X
X
X
X
L
L
H
X
H
X
X
WE
X
X
X
H
H
H
X
H
X
X
A11 A10 A9-A0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
13
ISSI
IS42S16100
®
OPERATION COMMAND TABLE(1,2)
Current State Command
Idle
Row Active
Read
Write
Read With
AutoPrecharge
14
DESL
NOP
BST
READ / READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
CS
Operation
(12)
No Operation or Power-Down
No Operation or Power-Down(12)
No Operation or Power-Down
Illegal
Illegal
Row Active
No Operation
Auto-Refresh or Self-Refresh(13)
Mode Register Set
No Operation
No Operation
No Operation
Read Start(17)
Write Start(17)
Illegal(10)
Precharge(15)
Illegal
Illegal
Burst Read Continues, Row Active When Done
Burst Read Continues, Row Active When Done
Burst Interrupted, Row Active After Interrupt
Burst Interrupted, Read Restart After Interrupt(16)
Burst Interrupted Write Start After Interrupt(11,16)
Illegal(10)
Burst Read Interrupted, Precharge After Interrupt
Illegal
Illegal
Burst Write Continues, Write Recovery When Done
Burst Write Continues, Write Recovery When Done
Burst Write Interrupted, Row Active After Interrupt
Burst Write Interrupted, Read Start After Interrupt(11,16)
Burst Write Interrupted, Write Restart After Interrupt(16)
Illegal(10)
Burst Write Interrupted, Precharge After Interrupt
Illegal
Illegal
Burst Read Continues, Precharge When Done
Burst Read Continues, Precharge When Done
Illegal
Illegal
Illegal
Illegal(10)
Illegal(10)
Illegal
Illegal
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
RAS CAS
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
WE
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
A11 A10 A9-A0
X
X
X
V
V
V
V
X
X
X
X
X
X
X
V V(18)
V V(18)
V V(18)
V
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
OPERATION COMMAND TABLE(1,2)
Current State Command
Operation
CS
Write With
DESL
Auto-Precharge
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Row Precharge DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Immediately
DESL
Following
NOP
Row Active
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Write
DESL
Recovery
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Burst Write Continues, Write Recovery And Precharge
When Done
Burst Write Continues, Write Recovery And Precharge
Illegal
Illegal
Illegal
Illegal(10)
Illegal(10)
Illegal
Illegal
No Operation, Idle State After tRP Has Elapsed
No Operation, Idle State After tRP Has Elapsed
No Operation, Idle State After tRP Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10)
No Operation, Idle State After tRP Has Elapsed(10)
Illegal
Illegal
No Operation, Row Active After tRCD Has Elapsed
No Operation, Row Active After tRCD Has Elapsed
No Operation, Row Active After tRCD Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10,14)
Illegal(10)
Illegal
Illegal
No Operation, Row Active After tDPL Has Elapsed
No Operation, Row Active After tDPL Has Elapsed
No Operation, Row Active After tDPL Has Elapsed
Read Start
Write Restart
Illegal(10)
Illegal(10)
Illegal
Illegal
H
X
X
X
X
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
X
V
V
V
V
X
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
RAS CAS
WE
A11 A10 A9-A0
X
X
X
X
X
X
V
V(18)
V
V(18)
V
V(18)
V
X
X
X
OPCODE
X
X
X
X
X
X
X
X
X
V
V
V(18)
V
V
V(18)
V
V
V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V
V(18)
V
V
V(18)
V
V
V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V
V(18)
V
V
V(18)
V
V
V(18)
V
V
X
X
X
X
OP CODE
15
ISSI
IS42S16100
®
OPERATION COMMAND TABLE(1,2)
Current State Command
Operation
CS
Write Recovery DESL
With AutoNOP
Precharge
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Refresh
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Mode Register DESL
Set
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
No Operation, Idle State After tDAL Has Elapsed
No Operation, Idle State After tDAL Has Elapsed
No Operation, Idle State After tDAL Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10)
Illegal(10)
Illegal
Illegal
No Operation, Idle State After tRP Has Elapsed
No Operation, Idle State After tRP Has Elapsed
No Operation, Idle State After tRP Has Elapsed
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
No Operation, Idle State After tMCD Has Elapsed
No Operation, Idle State After tMCD Has Elapsed
No Operation, Idle State After tMCD Has Elapsed
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
RAS CAS
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
WE
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
A11 A10 A9-A0
X
X
X
V
V
V
V
X
X
X
X
X
X
X
V V(18)
V V(18)
V V(18)
V
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, V: Valid data input
2. All input signals are latched on the rising edge of the CLK signal.
3. Both banks must be placed in the inactive (idle) state in advance.
4. The state of the A0 to A11 pins is loaded into the mode register as an OP code.
5. The row address is generated automatically internally at this time. The I/O pin and the address pin data is ignored.
6. During a self-refresh operation, all pin data (states) other than CKE is ignored.
7. The selected bank must be placed in the inactive (idle) state in advance.
8. The selected bank must be placed in the active state in advance.
9. This command is valid only when the burst length set to full page.
10. This is possible depending on the state of the bank selected by the A11 pin.
11. Time to switch internal busses is required.
12. The IS42S16100 can be switched to power-down mode by dropping the CKE pin LOW when both banks in the idle state.
Input pins other than CKE are ignored at this time.
13. The IS42S16100 can be switched to self-refresh mode by dropping the CKE pin LOW when both banks in the idle state.
Input pins other than CKE are ignored at this time.
14. Possible if tRRD is satisfied.
15. Illegal if tRAS is not satisfied.
16. The conditions for burst interruption must be observed. Also note that the IS42S16100 will enter the precharged state
immediately after the burst operation completes if auto-precharge is selected.
17. Command input becomes possible after the period tRCD has elapsed. Also note that the IS42S16100 will enter the
precharged state immediately after the burst operation completes if auto-precharge is selected.
18. A8,A9 = don't care.
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
CKE RELATED COMMAND TRUTH TABLE(1)
Current State
Operation
Self-Refresh
Undefined
Self-Refresh Recovery(2)
Self-Refresh Recovery(2)
Illegal(2)
Illegal(2)
Self-Refresh
Idle State After tRC Has Elapsed
Idle State After tRC Has Elapsed
Illegal
Illegal
Power-Down on the Next Cycle
Power-Down on the Next Cycle
Illegal
Illegal
Clock Suspend Termination on the Next Cycle (2)
Clock Suspend
Undefined
Power-Down Mode Termination, Idle After
That Termination(2)
Power-Down Mode
No Operation
See the Operation Command Table
Bank Active Or Precharge
Auto-Refresh
Mode Register Set
See the Operation Command Table
See the Operation Command Table
See the Operation Command Table
Self-Refresh(3)
See the Operation Command Table
Power-Down Mode(3)
See the Operation Command Table
Clock Suspend on the Next Cycle(4)
Clock Suspend Termination on the Next Cycle
Clock Suspend Termination on the Next Cycle
Self-Refresh Recovery
Power-Down
Both Banks Idle
Other States
CKE
n-1
n
CS
RAS CAS
WE
A11 A10 A9-A0
H
L
L
L
L
L
H
H
H
H
H
H
H
H
L
L
H
L
X
H
H
H
H
L
H
H
H
H
L
L
L
L
H
L
X
H
X
H
L
L
L
X
H
L
L
L
H
L
L
L
X
X
X
X
X
X
H
H
L
X
X
H
H
L
X
H
H
L
X
X
X
X
X
X
H
L
X
X
X
H
L
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
H
H
H
H
H
H
H
H
H
L
H
H
L
L
L
H
H
H
H
H
L
L
L
L
L
X
H
L
H
L
X
H
L
L
L
L
H
L
L
L
L
X
X
X
X
X
X
X
H
L
L
L
X
H
L
L
L
X
X
X
X
X
X
X
X
H
L
L
X
X
H
L
L
X
X
X
X
X
X
X
X
X
H
L
X
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input
2. The CLK pin and the other input are reactivated asynchronously by the transition of the CKE level from LOW to HIGH. The
minimum setup time (tCKA) required before all commands other than mode termination must be satisfied.
3. Both banks must be set to the inactive (idle) state in advance to switch to power-down mode or self-refresh mode.
4. The input must be command defined in the operation command table.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
17
ISSI
IS42S16100
®
TWO BANKS OPERATION COMMAND TRUTH TABLE(1,2)
RAS CAS
WE
Previous State
BANK 0 BANK 1
Next State
BANK 0 BANK 1
Operation
CS
DESL
NOP
BST
H
L
L
X
H
H
X
H
H
X
H
L
X
X
X
X
X
X
X
X
X
Any
Any
R/W/A
I
I/A
I/A
Any
Any
I/A
I/A
R/W/A
I
Any
Any
A
I
I/A
I/A
Any
Any
I/A
I/A
A
I
READ/READA
L
H
L
H
H
H
H
H
L
L
L
L
H
H
L
L
H
H
L
L
CA(3)
CA(3)
CA(3)
CA(3)
CA(3)
CA(3)
CA(3)
CA(3)
I/A
R/W
I/A
R/W
R/W/A
A
R/W/A
A
R/W/A
A
R/W/A
A
I/A
R/W
I/A
R/W
I/A
A
I/A
A
RP
RP
R
R
RP
RP
R
R
I/A
A
I/A
A
WRIT/WRITA
L
H
L
L
ACT
L
L
H
H
PRE/PALL
L
L
H
L
REF
MRS
L
L
L
L
L
L
H
L
H
H
H
H
L
L
L
L
H
L
X
X
H
H
L
L
X
A11 A10 A9-A0
H CA(3)
H CA(3)
L CA(3)
L CA(3)
H CA(3)
H CA(3)
L CA(3)
L CA(3)
RA RA
RA RA
H
X
H
X
L
X
L
X
L
X
L
X
X
X
OPCODE
I/A
R/W/A
R/W
A
I/A
R/W/A
R/W
A
R/W/A
I/A
A
R/W
R/W/A
I/A
A
R/W
Any
I
I
Any
R/W/A/I
I/A
I/A
R/W/A/I
I/A
R/W/A/I
R/W/A/I
I/A
R/W/A/I
I/A
I/A
R/W/A/I
I
I
I
I
I/A
WP
A
WP
I/A
W
A
W
WP
I/A
WP
A
W
I/A
W
A
Any
A
A
Any
I
I
I
I
I/A
I
R/W/A/I
I
I
I/A
I
R/W/A/I
I
I
I
I
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, RA: Row Address, CA: Column
Address
2. The device state symbols are interpreted as follows:
I
Idle (inactive state)
A
Row Active State
R
Read
W
Write
RP
Read With Auto-Precharge
WP
Write With Auto-Precharge
Any
Any State
3. CA: A8,A9 = don't care.
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
SIMPLIFIED STATE TRANSITION DIAGRAM (One Bank Operation)
SELF
REFRESH
SREF entry
SREF exit
MRS
MODE
AUTO
REFRESH
REF
IDLE
REGISTER
SET
CKE_
CKE
IDLE
POWER
DOWN
ACT
ACTIVE
POWER
DOWN
CKE_
CKE
BANK
ACTIVE
BST
BST
READ
WRIT
WRIT
READ
WRITA
READA
READ
WRITE
READ
CKE_
CKE
CLOCK
SUSPEND
READA
WRITA
WRITA
CKE_
CKE
READA
WRITE WITH
AUTO
PRECHARGE
POWER ON
PRE
CKE
CLOCK
SUSPEND
CKE_
READ WITH
AUTO
PRECHARGE
PRE
PRE
POWER APPLIED
CKE_
WRIT
CKE
PRE
PRECHARGE
Automatic transition following the
completion of command execution.
Transition due to command input.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
19
ISSI
IS42S16100
®
Device Initialization At Power-On
Burst Length
(Power-On Sequence)
When writing or reading, data can be input or output data
continuously. In these operations, an address is input only
once and that address is taken as the starting address
internally by the device. The device then automatically
generates the following address. The burst length field in
the mode register stipulates the number of data items
input or output in sequence. In the IS42S16100 product,
a burst length of 1, 2, 4, 8, or full page can be specified. See
the table on the next page for details on setting the mode
register.
As is the case with conventional DRAMs, the IS42S16100
product must be initialized by executing a stipulated
power-on sequence after power is applied.
After power is applied and VCC and VCCQ reach their
stipulated voltages, set and hold the CKE and DQM pins
HIGH for 100 µs. Then, execute the precharge command
to precharge both bank. Next, execute the auto-refresh
command twice or more and define the device operation
mode by executing a mode register set command.
The mode register set command can be also set before
auto-refresh command.
Mode Register Settings
The mode register set command sets the mode register.
When this command is executed, pins A0 to A9, A10, and
A11 function as data input pins for setting the register, and
this data becomes the device internal OP code. This OP
code has four fields as listed in the table below.
Input Pin
Field
A11, A10, A9, A8
A6, A5, A4
A3
A2, A1, A0
Mode Options
CAS Latency
Burst Type
Burst Length
Note that the mode register set command can be executed
only when both banks are in the idle (inactive) state. Wait
at least two cycles after executing a mode register set
command before executing the next command.
CAS Latency
During a read operation, the between the execution of the
read command and data output is stipulated as the CAS
latency. This period can be set using the mode register set
command. The optimal CAS latency is determined by the
clock frequency and device speed grade (-10/12). See the
"Operating Frequency / Latency Relationships" item for
details on the relationship between the clock frequency
and the CAS latency. See the table on the next page for
details on setting the mode register.
20
Burst Type
The burst data order during a read or write operation is
stipulated by the burst type, which can be set by the mode
register set command. The IS42S16100 product supports
sequential mode and interleaved mode burst type settings.
See the table on the next page for details on setting the
mode register. See the "Burst Length and Column Address
Sequence" item for details on I/O data orders in these
modes.
Write Mode
Burst write or single write mode is selected by the OP code
(A11, A10, A9) of the mode register.
A burst write operation is enabled by setting the OP code
(A11, A10, A9) to (0,0,0). A burst write starts on the same
cycle as a write command set. The write start address is
specified by the column address and bank select address
at the write command set cycle.
A single write operation is enabled by setting OP code
(A11, A10, A9) to (1,0,0). In a single write operation, data
is only written to the column address and bank select
address specified by the write command set cycle without
regard to the bust length setting.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
MODE REGISTER
11
10
9
8
7
WRITE MODE
6
5
4
LT MODE
3
BT
2
1
Address Bus
Mode Register (Mx)
0
BL
Burst Length
Burst Type
Latency Mode
M11
M10
M9
M8
M7
X
X
X
X
0
1
0
0
0
0
Mode Register Set
Burst Read & Single Write
0
0
0
0
0
Reserved Test Set
M1
M0
Sequential
Interleaved
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
4
8
Reserved
Reserved
Reserved
Full Page
1
2
4
8
Reserved
Reserved
Reserved
Reserved
M3
Type
0
1
Sequential
Interleaved
M6
M5
M4
CAS Latency
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Write Mode
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
M2
21
ISSI
IS42S16100
®
BURST LENGTH AND COLUMN ADDRESS SEQUENCE
Burst Length
2
4
8
Full Page
(256)
Column Address
A2 A1 A0
X
X
X
X
X
X
0
0
0
0
1
1
1
1
n
X
X
0
0
1
1
0
0
1
1
0
0
1
1
n
0
1
0
1
0
1
0
1
0
1
0
1
0
1
n
Address Sequence
Sequential
Interleaved
0-1
1-0
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Cn, Cn+1, Cn+2
Cn+3, Cn+4.....
...Cn-1(Cn+255),
Cn(Cn+256).....
0-1
1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
None
Notes:
1. The burst length in full page mode is 256.
22
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
BANK SELECT AND PRECHARGE ADDRESS ALLOCATION
Row
X0
X1
X2
X3
X4
X5
X6
X7
X8
X9
X10
X11
Column
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
—
—
—
—
—
—
—
—
—
—
0
1
0
1
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Precharge of the Selected Bank (Precharge Command) Row Address
Precharge of Both Banks (Precharge Command)
(Active Command)
Bank 0 Selected (Precharge and Active Command)
Bank 1 Selected (Precharge and Active Command)
—
—
—
—
—
—
—
—
—
—
0
1
0
1
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Don't Care
Don't Care
Auto-Precharge - Disabled
Auto-Precharge - Enables
Bank 0 Selected (Read and Write Commands)
Bank 1 Selected (Read and Write Commands)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
23
ISSI
IS42S16100
®
Burst Read
The read cycle is started by executing the read command.
The address provided during read command execution is
used as the starting address. First, the data corresponding
to this address is output in synchronization with the clock
signal after the CAS latency period. Next, data corresponding
to an address generated automatically by the device is
output in synchronization with the clock signal.
is a full page is an exception. In this case the output buffers
must be set to the high impedance state by executing a
burst stop command.
Note that upper byte and lower byte output data can be
masked independently under control of the signals applied
to the U/LDQM pins. The delay period (tQMD) is fixed at
two, regardless of the CAS latency setting, when this
function is used.
The output buffers go to the LOW impedance state CAS
latency minus one cycle after the read command, and go
to the HIGH impedance state automatically after the last
data is output. However, the case where the burst length
The selected bank must be set to the active state before
executing this command.
CLK
COMMAND
READ A0
tQMD=2
UDQM
LDQM
I/O8-I/O15
DOUT A0
I/O0-I/O 7
DOUT A0
READ (CA=A, BANK 0)
DOUT A2
HI-Z
DOUT A1
DOUT A3
HI-Z
HI-Z
DATA MASK (LOWER BYTE)
DATA MASK (UPPER BYTE)
CAS latency = 3, burst length = 4
Burst Write
The write cycle is started by executing the command. The
address provided during write command execution is
used as the starting address, and at the same time, data
for this address is input in synchronization with the clock
signal.
Next, data is input in other in synchronization with the
clock signal. During this operation, data is written to
address generated automatically by the device. This cycle
terminates automatically after a number of clock cycles
determined by the stipulated burst length. However, the
case where the burst length is a full page is an exception.
In this case the write cycle must be terminated by executing
a burst stop command. The latency for I/O pin data input
is zero, regardless of the CAS latency setting. However, a
wait period (write recovery: tDPL) after the last data input is
required for the device to complete the write operation.
Note that the upper byte and lower byte input data can be
masked independently under control of the signals applied
to the U/LDQM pins. The delay period (tDMD) is fixed at
zero, regardless of the CAS latency setting, when this
function is used.
The selected bank must be set to the active state before
executing this command.
CLK
COMMAND
I/O
WRITE
DIN 0
DIN 1
DIN 2
DIN 3
BURST LENGTH
CAS latency = 2,3, burst length = 4
24
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read With Auto-Precharge
The read with auto-precharge command first executes a
burst read operation and then puts the selected bank in the
precharged state automatically. After the precharge completes, the bank goes to the idle state. Thus this command
performs a read command and a precharge command in
a single operation.
During this operation, the delay period (tPQL) between the
last burst data output and the start of the precharge
operation differs depending on the CAS latency setting.
three, the precharge operation starts on two clock cycles
before the last burst data is output (tPQL = –2). Therefore,
the selected bank can be made active after a delay of tRP
from the start position of this precharge operation.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
When the CAS latency setting is two, the precharge
operation starts on one clock cycle before the last burst
data is output (tPQL = –1). When the CAS latency setting is
CAS Latency
tPQL
3
–2
2
–1
CLK
COMMAND
READA 0
ACT 0
tPQL
I/O
DOUT 0
READ WITH AUTO-PRECHARGE
(BANK 0)
DOUT 1
DOUT 2
PRECHARGE START
DOUT 3
tRP
CAS latency = 2, burst length = 4
CLK
COMMAND
ACT 0
READA 0
tPQL
I/O
READ WITH AUTO-PRECHARGE
(BANK 0)
DOUT 0
PRECHARGE START
DOUT 1
DOUT 2
DOUT 3
tRP
CAS latency = 3, burst length = 4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
25
ISSI
IS42S16100
®
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (tDAL) between the
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (tDAL) is tRP plus one CLK period. That is, the
precharge operation starts one clock period after the last
burst data input.
Therefore, the selected bank can be made active after a
delay of tDAL.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
CAS Latency
tDAL
3
1CLK
+tRP
2
1CLK
+tRP
CLK
COMMAND
WRITE A0
ACT 0
PRECHARGE START
I/O
DIN 0
DIN 1
DIN 2
DIN 3
tRP
tDAL
WRITE WITH AUTO-PRECHARGE
(BANK 0)
CAS latency = 2, burst length = 4
CLK
COMMAND
ACT 0
WRITE A0
PRECHARGE START
I/O
DIN 0
DIN 1
WRITE WITH AUTO-PRECHARGE
(BANK 0)
DIN 2
DIN 3
tRP
tDAL
CAS latency = 3, burst length = 4
26
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Interval Between Read Command
The interval between two read command (tCCD) must be at
least one clock cycle.
A new command can be executed while a read cycle is in
progress, i.e., before that cycle completes. When the
second read command is executed, after the CAS latency
has elapsed, data corresponding to the new read command
is output in place of the data due to the previous read
command.
The selected bank must be set to the active state before
executing this command.
CLK
COMMAND
READ A0
READ B0
I/O
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
tCCD
READ (CA=A, BANK 0) READ (CA=B, BANK 0)
CAS latency = 2, burst length = 4
Interval Between Write Command
A new command can be executed while a write cycle is in
progress, i.e., before that cycle completes. At the point the
second write command is executed, data corresponding
to the new write command can be input in place of the data
for the previous write command.
The interval between two write commands (tCCD) must be
at least one clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
tCCD
COMMAND
I/O
WRITE A0
WRITE B0
DIN A0
DIN B0
DIN B1
DIN B2
DIN B3
WRITE (CA=A, BANK 0) WRITE (CA=B, BANK 0)
CAS latency = 2, burst length = 4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
27
ISSI
IS42S16100
®
Interval Between Write and Read Commands
A new read command can be executed while a write cycle
is in progress, i.e., before that cycle completes. Data
corresponding to the new read command is output after
the CAS latency has elapsed from the point the new read
command was executed. The I/On pins must be placed in
the HIGH impedance state at least one cycle before data
is output during this operation.
The interval (tCCD) between command must be at least one
clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
tCCD
COMMAND
I/O
WRITE A0
READ B0
DIN A0
HI-Z
WRITE (CA=A, BANK 0)
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT B0
DOUT B1
DOUT B2
READ (CA=B, BANK 0)
CAS latency = 2, burst length = 4
CLK
tCCD
COMMAND
I/O
WRITE A0
READ B0
DIN A0
WRITE (CA=A, BANK 0)
CAS latency = 3, burst length = 4
28
HI-Z
DOUT B3
READ (CA=B, BANK 0)
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Interval Between Read and Write Commands
A read command can be interrupted and a new write
command executed while the read cycle is in progress,
i.e., before that cycle completes. Data corresponding to
the new write command can be input at the point new write
command is executed. To prevent collision between input
and output data at the I/On pins during this operation, the
output data must be masked using the U/LDQM pins. The
interval (tCCD) between these commands must be at least
one clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
tCCD
COMMAND
READ A0
WRITE B0
U/LDQM
I/O
HI-Z
DIN B0
READ (CA=A, BANK 0)
DIN B1
DIN B2
DIN B3
WRITE (CA=B, BANK 0)
CAS latency = 2, 3, burst length = 4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
29
ISSI
IS42S16100
Precharge
Read Cycle Interruption
The precharge command sets the bank selected by pin
A11 to the precharged state. This command can be
executed at a time tRAS following the execution of an active
command to the same bank. The selected bank goes to
the idle state at a time tRP following the execution of the
precharge command, and an active command can be
executed again for that bank.
Using the Precharge Command
®
A read cycle can be interrupted by the execution of the
precharge command before that cycle completes. The
delay time (tRQL) from the execution of the precharge
command to the completion of the burst output is the clock
cycle of CAS latency.
If pin A10 is low when this command is executed, the bank
selected by pin A11 will be precharged, and if pin A10 is
HIGH, both banks will be precharged at the same time.
This input to pin A11 is ignored in the latter case.
CAS Latency
tRQL
3
3
2
2
CLK
tRQL
COMMAND
PRE 0
READ A0
I/O
DOUT A0
READ (CA=A, BANK 0)
DOUT A1
DOUT A2
HI-Z
PRECHARGE (BANK 0)
CAS latency = 2, burst length = 4
CLK
tRQL
COMMAND
READ A0
I/O
PRE 0
DOUT A0
READ (CA=A, BANK 0)
DOUT A1
DOUT A2
HI-Z
PRECHARGE (BANK 0)
CAS latency = 3, burst length = 4
30
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle Interruption Using the
Precharge Command
A write cycle can be interrupted by the execution of the
precharge command before that cycle completes. The
delay time (tWDL) from the precharge command to the
point where burst input is invalid, i.e., the point where input
data is no longer written to device internal memory is zero
clock cycles regardless of the CAS.
Inversely, to write all the burst data to the device, the
precharge command must be executed after the write
data recovery period (tDPL) has elapsed. Therefore, the
precharge command must be executed on one clock cycle
that follows the input of the last burst data item.
To inhibit invalid write, the DQM signal must be asserted
HIGH with the precharge command.
This precharge command and burst write command must
be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of dual bank
operation.
CAS Latency
tWDL
3
0
2
0
tDPL
1
1
CLK
tWDL=0
COMMAND
PRE 0
WRITE A0
DQM
I/O
DIN A0
DIN A1
DIN A2
DIN A3
MASKED BY DQM
WRITE (CA=A, BANK 0)
CAS latency = 2, 3, burst length = 4
PRECHARGE (BANK 0)
CLK
tDPL
COMMAND
WRITE A0
I/O
DIN A0
PRE 0
DIN A1
DIN A2
WRITE (CA=A, BANK 0)
DIN A3
PRECHARGE (BANK 0)
CAS latency = 2, 3, burst length = 4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
31
ISSI
IS42S16100
®
Read Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42S16100 can output data continuously from the
burst start address (a) to location a+255 during a read
cycle in which the burst length is set to full page. The
IS42S16100 repeats the operation starting at the 256th
cycle with the data output returning to location (a) and
continuing with a+1, a+2, a+3, etc. A burst stop command
must be executed to terminate this cycle. A precharge
command must be executed within the ACT to PRE
command period (tRAS max.) following the burst stop
command.
After the period (tRBD) required for burst data output to stop
following the execution of the burst stop command has
elapsed, the outputs go to the HIGH impedance state.
This period (tRBD) is two clock cycle when the CAS latency
is two and three clock cycle when the CAS latency is three.
CAS Latency
3
2
tRBD
3
2
CLK
tRBD
COMMAND
READ A0
I/O
BST
DOUT A0
DOUT A0
DOUT A1
DOUT A2
DOUT A3
HI-Z
BURST STOP
READ (CA=A, BANK 0)
CAS latency = 2, burst length = full page
CLK
tRBD
COMMAND
BST
READ A0
I/O
DOUT A0
READ (CA=A, BANK 0)
DOUT A0
DOUT A1
DOUT A2
DOUT A3
HI-Z
BURST STOP
CAS latency = 3, burst length = full page
32
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42S16100 can input data continuously from the
burst start address (a) to location a+255 during a write
cycle in which the burst length is set to full page. The
IS42S16100 repeats the operation starting at the 256th
cycle with data input returning to location (a) and continuing
with a+1, a+2, a+3, etc. A burst stop command must be
executed to terminate this cycle. A precharge command
must be executed within the ACT to PRE command period
(tRAS max.) following the burst stop command. After the
period (tWBD) required for burst data input to stop following
the execution of the burst stop command has elapsed, the
write cycle terminates. This period (tWBD) is zero clock
cycles, regardless of the CAS latency.
CLK
tWBD=0
COMMAND
WRITE A0
tRP
BST
PRE 0
INVALID DATA
I/O
DIN A0
DIN A1
DIN A
DIN A1
DIN A2
READ (CA=A, BANK 0)
BURST STOP
PRECHARGE (BANK 0)
CAS latency = 2, 3, burst length = full page
Don't Care
Burst Data Interruption Using the
U/LDQM Pins (Read Cycle)
Burst data output can be temporarily interrupted (masked)
during a read cycle using the U/LDQM pins. Regardless
of the CAS latency, two clock cycles (tQMD) after one of the
U/LDQM pins goes HIGH, the corresponding outputs go
to the HIGH impedance state. Subsequently, the outputs
are maintained in the high impedance state as long as that
U/LDQM pin remains HIGH. When the U/LDQM pin goes
LOW, output is resumed at a time tQMD later. This output
control operates independently on a byte basis with the
UDQM pin controlling upper byte output (pins
I/O8-I/O15) and the LDQM pin controlling lower byte
output (pins I/O0 to I/O7).
Since the U/LDQM pins control the device output buffers
only, the read cycle continues internally and, in particular,
incrementing of the internal burst counter continues.
CLK
COMMAND
READ A0
tQMD=2
UDQM
LDQM
I/O8-I/O15
DOUT A0
I/O0-I/O 7
DOUT A0
READ (CA=A, BANK 0)
CAS latency = 2, burst length = 4
DOUT A1
DOUT A2
DOUT A3
HI-Z
HI-Z
DATA MASK (LOWER BYTE)
DATA MASK (UPPER BYTE)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
HI-Z
33
ISSI
IS42S16100
®
Burst Data Interruption U/LDQM Pins
(Write Cycle)
Burst data input can be temporarily interrupted (muted )
during a write cycle using the U/LDQM pins. Regardless
of the CAS latency, as soon as one of the U/LDQM pins
goes HIGH, the corresponding externally applied input
data will no longer be written to the device internal circuits.
Subsequently, the corresponding input continues to be
muted as long as that U/LDQM pin remains HIGH.
that pin is dropped to LOW and data will be written to the
device. This input control operates independently on a
byte basis with the UDQM pin controlling upper byte input
(pin I/O8 to I/O15) and the LDQM pin controlling the lower
byte input (pins I/O0 to I/O7).
Since the U/LDQM pins control the device input buffers
only, the cycle continues internally and, inparticular,
incrementing of the internal burst counter continues.
The IS42S16100 will revert to accepting input as soon as
CLK
COMMAND
WRITE A0
UDQM
tDMD=0
LDQM
I/O8-I/O15
DIN A1
I/O0-I/O7
DIN A0
WRITE (CA=A, BANK 0)
DIN A2
DIN A3
DIN A3
DATA MASK (LOWER BYTE)
DATA MASK (UPPER BYTE)
CAS latency = 2, burst length = 4
Don't Care
Burst Read and Single Write
The burst read and single write mode is set up using the
mode register set command. During this operation, the
burst read cycle operates normally, but the write cycle
only writes a single data item for each write cycle. The
CAS latency and DQM latency are the same as in normal
mode.
CLK
COMMAND
I/O
CAS latency = 2, 3
34
WRITE A0
DIN A0
WRITE (CA=A, BANK 0)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Bank Active Command Interval
When the selected bank is precharged, the period trp has
elapsed and the bank has entered the idle state, the bank
can be activated by executing the active command. If the
other bank is in the idle state at that time, the active
command can be executed for that bank after the period
tRRD has elapsed. At that point both banks will be in the
active state. When a bank active command has been
executed, a precharge command must be executed for
that bank within the ACT to PRE command period (tRAS
max). Also note that a precharge command cannot be
executed for an active bank before tRAS (min) has elapsed.
After a bank active command has been executed and the
trcd period has elapsed, read write (including autoprecharge) commands can be executed for that bank.
CLK
tRRD
COMMAND
ACT 0
ACT 1
BANK ACTIVE (BANK 0)
BANK ACTIVE (BANK 1)
CLK
tRCD
COMMAND
CAS latency = 3
ACT 0
READ 0
BANK ACTIVE (BANK 0)
BANK ACTIVE (BANK 0)
Clock Suspend
When the CKE pin is dropped from HIGH to LOW during
a read or write cycle, the IS42S16100 enters clock suspend
mode on the next CLK rising edge. This command reduces
the device power dissipation by stopping the device
internal clock. Clock suspend mode continues as long as
the CKE pin remains low. In this state, all inputs other than
CKE pin are invalid and no other commands can be
executed. Also, the device internal states are maintained.
When the CKE pin goes from LOW to HIGH clock suspend
mode is terminated on the next CLK rising edge and
device operation resumes.
The next command cannot be executed until the recovery
period (tCKA) has elapsed.
Since this command differs from the self-refresh command
described previously in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tref). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.
CLK
CKE
COMMAND
READ 0
I/O
DOUT 0
READ (BANK 0)
DOUT 1
DOUT 2
DOUT 3
CLOCK SUSPEND
CAS latency = 2, burst length = 4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
35
ISSI
IS42S16100
®
OPERATION TIMING EXAMPLE
Power-On Sequence, Mode Register Set Cycle
T0
T1
T2
T3
T10
T17
T18
T19
T20
CLK
tCHI
tCK
CKE HIGH
tCS
tCL
tCH
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
ROW
CODE
tAS
A10
tAH
tAS
tAH
tAH
CODE
BANK 0 & 1
tAS
A11
ROW
tAH
BANK 1
CODE
BANK 0
DQM HIGH
I/O
WAIT TIME
T=100 µs
<PALL>
tRC
tRP
<REF>
<REF>
tRAS
tRC
tMCD
tRC
<MRS>
<ACT>
Undefined
CAS latency = 2, 3
36
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Power-Down Mode Cycle
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
tCKH
tCKS
tCKA
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
ROW
A0-A9
tAS
A10
tAH
BANK 0 & 1
ROW
BANK 0 OR 1
BANK 1
A11
BANK 1
BANK 0
BANK 0
DQM
I/O
POWER DOWN MODE
tRP
<PRE>
<PALL>
<SBY>
CAS latency = 2, 3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
EXIT
POWER DOWN MODE
tRAS
tRC
<ACT>
Undefined
Don't Care
37
ISSI
IS42S16100
®
Auto-Refresh Cycle
T0
T1
T2
T3
Tl
Tm
Tn
Tn+1
CLK
tCKS
tCK
tCS
tCH
tCHI
tCL
CKE
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
ROW
A0-A9
A10
ROW
BANK 0 & 1
BANK 1
A11
BANK 0
DQM
I/O
tRC
tRP
<PALL>
CAS latency = 2, 3
38
<REF>
<REF>
tRAS
tRC
tRC
tRC
<REF>
<ACT>
Undefined
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Self-Refresh Cycle
T0
T1
T2
T3
Tm
Tm+1
Tm+2
Tn
CLK
tCKS
CKE
tCK
tCHI
tCL
tCKS
tCKS
tCKA
tCS
tCKA
tCH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
A10
BANK 0 & 1
A11
DQM
I/O
tRP
<PALL>
SELF REFRESH MODE
<SELF>
EXIT
SELF
REFRESH
tRC
tRC
<REF>
Undefined
CAS latency = 2, 3
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
39
ISSI
IS42S16100
®
Read Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
ROW
BANK 0 AND 1
tAH
NO PRE
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
ROW
A0-A9
ROW
BANK 0 OR 1
BANK 1
BANK 1
BANK 1
BANK 1
BANK 0
tCS
BANK 0
tCH
tQMD
BANK 0
BANK 0
DQM
tAC
tAC
tOH
I/O
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tHZ
tCAC
tRAS
tRQL
tRCD
tRP
tRAS
tRC
tRC
<ACT>
<READ>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
40
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
ROW
A0-A9
tAS
COLUMN m
ROW
AUTO PRE
ROW
BANK 1
BANK 1
tAH
ROW
A10
tAH
tAS
A11
(1)
BANK 1
BANK 0
tCS
BANK 0
BANK 0
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tCAC
tRAS
tHZ
tPQL
tRCD
tRP
tRAS
tRC
tRC
<ACT>
<READA>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
41
ISSI
IS42S16100
®
Read Cycle / Full Page
T0
T1
T2
T3
T4
T5
T6
T260
T261
T262
T263
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMN
ROW
A0-A9
BANK 0
NO PRE
BANK 0 OR 1
BANK 0
BANK 0
tCS
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
DOUT 0m
tAC
tOH
DOUT 0m+1
tAC
tOH
DOUT 0m-1
tAC
tOH
tOH
DOUT 0m
DOUT 0m+1
tLZ
tRCD
tCAC
tHZ
tRBD
(BANK 0)
tRP
(BANK 0)
tRAS
tRC
(BANK 0)
<ACT 0>
<READ0>
<BST>
<PRE 0>
Undefined
CAS latency = 2, burst length = full page
Don't Care
Note 1: A8,A9 = Don't Care.
42
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Ping-Pong Operation (Bank Switching)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
ROW
A0-A9
(1)
ROW
COLUMN
tAS
tAH
AUTO PRE
tAH
NO PRE
ROW
COLUMN
AUTO PRE
ROW
ROW
A10
tAS
A11
(1)
BANK 0
BANK 0
ROW
BANK 1
tCS
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 0 OR 1
BANK 0
BANK 1
tCH
tQMD
DQM
tAC
tAC
tAC
tOH
I/O
DOUT 0m+1
tLZ
tRRD
(BANK 0 TO 1)
tRCD
(BANK 0)
tCAC
(BANK 1)
DOUT 1m
tOH
DOUT 1m+1
tLZ
tHZ
tCAC
(BANK 1)
tRCD
(BANK 1)
tRP
tRAS
(BANK 0)
tRC
(BANK 0)
<ACT 0>
tOH
tOH
DOUT 0m
tAC
(BANK 0)
tHZ
tRCD
(BANK 0)
tRAS
(BANK 0)
tRC
(BANK 0)
tRAS
(BANK 1)
tRC
(BANK 1)
<READ 0>
<READA 0>
<ACT1>
<READ 1>
<READA 1>
tRP
(BANK1)
<PRE 0>
<ACT 0>
<PRE 1>
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
43
ISSI
IS42S16100
®
Write Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
COLUMN m
ROW
BANK 0 AND 1
tAH
NO PRE
ROW
A10
tAH
tAS
A11
(1)
ROW
A0-A9
ROW
BANK 1
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
BANK 0
BANK 0
BANK 1
BANK 0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDPL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRIT>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
44
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
COLUMN m
ROW
AUTO PRE
ROW
BANK 1
BANK 1
tAH
ROW
A10
tAH
tAS
A11
(1)
ROW
A0-A9
BANK 1
BANK 0
BANK 0
tCS
BANK 0
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDAL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRITA>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
45
ISSI
IS42S16100
®
Write Cycle / Full Page
T0
T1
T2
T3
T4
T5
T258
T259
T260
T261
T262
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
COLUMN m
ROW
A0-A9
tAS
tAH
ROW
A10
tAH
tAS
A11
(1)
BANK 0
NO PRE
BANK 0 OR 1
BANK 0
BANK 0
tCH
tCS
DQM
tDS
I/O
tDH tDS
DIN 0m
tDH tDS
DIN 0m+1
tDH tDS
DIN 0m+2
tDH
DIN 0m-1
DIN 0m
tDPL
tRCD
tRAS
tRP
tRC
<ACT 0>
<WRIT0>
<BST>
<PRE 0>
Undefined
CAS latency = 2, burst length = full page
Don't Care
Note 1: A8,A9 = Don't Care.
46
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Ping-Pong Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
(1)
ROW
COLUMN
tAS
tAH
AUTO PRE
tAH
NO PRE
ROW
COLUMN
AUTO PRE
ROW
A10
ROW
tAS
A11
(1)
ROW
A0-A9
BANK 0
BANK 0
ROW
BANK 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 0
tCH
tCS
DQM
tDS
tDH tDS
DIN 0m
I/O
tRRD
(BANK 0 TO 1)
tRCD
(BANK 0)
tDH tDS
DIN 0m+2
tDH tDS
DIN 0m+3
tDH tDS
DIN 1m
tDH tDS
DIN 1m+1
tDH tDS
DIN 1m+2
tDH
DIN 1m+3
tDPL
tDPL
tRCD
(BANK 1)
tRP
(BANK 0)
tRAS
(BANK 0)
tRC
(BANK 0)
<ACT 0>
tDH tDS
DIN 0m+1
tRCD
(BANK 0)
tRAS
(BANK 0)
tRC
(BANK 0)
tRAS
(BANK 1)
tRC
(BANK 1)
<WRIT 0>
<WRITA 0>
<ACT 1>
<WRIT 1>
<WRITA 1>
<PRE 0>
<ACT 0>
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
47
ISSI
IS42S16100
®
Read Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
(1)
COLUMN o
COLUMN n
tAH
ROW
A10
tAH
tAS
A11
COLUMN m
ROW
A0-A9
(1)
(1)
BANK 1
BANK 0
tCS
NO PRE
NO PRE
BANK 1
BANK 1
BANK 0
BANK 0
tQMD
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 0
tCH
DQM
tAC
tAC
tOH
I/O
tAC
tOH
DOUT m
DOUT m+1
tAC
tOH
DOUT n
tAC
tOH
DOUT n+1
tAC
tOH
DOUT o
tLZ
tRCD
tRAS
tRC
<ACT>
tHZ
tCAC
<READ>
tOH
DOUT o+1
tCAC
<READ>
tCAC
<READ>
<READA>
tRQL
tRP
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
48
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
A0-A9
tAS
(1)
(1)
COLUMN o
COLUMN n
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
ROW
BANK 1
BANK 0
tCS
NO PRE
NO PRE
BANK 1
BANK 1
BANK 0
BANK 0
tQMD
NO PRE
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 0
tCH
tQMD
DQM
tAC
tAC
tAC
tOH
I/O
tOH
DOUT m
DOUT m+1
tLZ
tRCD
tRAS
tRC
<ACT>
tCAC
<READ>
tAC
tOH
<MASK>
tOH
DOUT n
DOUT o
tLZ
tHZ
tCAC
tAC
tHZ
tCAC
<READ, ENB>
<READA, ENB>
tOH
DOUT o+1
tRQL
tRP
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
49
ISSI
IS42S16100
®
Write Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
(1)
(1)
COLUMN n
COLUMN o
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
NO PRE
NO PRE
BANK 1
BANK 1
BANK 0
BANK 0
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 0
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH tDS
DIN n
tDH tDS
DIN n+1
tDH tDS
tDH
DIN o
DIN o+1
tRCD
tRAS
tRC
<ACT>
tDPL
tRP
<WRIT>
<WRIT>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
50
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
COLUMN n
NO PRE
NO PRE
BANK 1
BANK 0
COLUMN o
AUTO PRE
BANK 0 AND 1
BANK 1
NO PRE
BANK 1OR 0
BANK 0
BANK 1
BANK 0
BANK 1
BANK 0
tAH
tAH
tAS
A11
COLUMN m
ROW
A10
(1)
(1)
(1)
ROW
A0-A9
BANK 1
BANK 0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH
tDS
DIN n
tDH tDS
DIN o
tRCD
tRAS
tRC
<ACT>
tDH
DIN o+1
tDPL
tRP
<WRIT>
<WRIT>
<MASK>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
51
ISSI
IS42S16100
®
Read Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCKS
tCL
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
ROW
tAH
AUTO PRE
BANK 0 AND 1
tAH
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 1
BANK 0
BANK 0
ROW
ROW
A10
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
tOH
DOUT m
DOUT m+1
tLZ
tRCD
tHZ
tCAC
tRAS
tRAS
tRP
tRC
<ACT 0>
tRC
<READ>
<READ A>
<SPND>
<SPND>
<PRE>
<PALL>
<ACT >
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
52
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL tCKS
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
ROW
tAH
AUTO PRE
BANK 0 AND 1
tAH
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 1
BANK 0
BANK 0
ROW
ROW
A10
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
tCH
DQM
tDS
tDS
tDH
DIN m
I/O
tDH
DIN m+1
tRCD
tDPL
tRAS
tRAS
tRP
tRC
<ACT>
tRC
<WRIT, SPND>
<WRITA, SPND>
<SPND>
<PRE>
<PALL>
<ACT >
Undefined
CAS latency = 2, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
53
ISSI
IS42S16100
®
Read Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
ROW
A0-A9
tAS
COLUMN n
ROW
AUTO PRE
tAH
ROW
ROW
A10
tAH
tAS
A11
(1)
(1)
COLUMN m
BANK 0
NO PRE
BANK 0 OR 1
BANK 0
BANK 0
tCS
NO PRE
BANK 0
BANK 0
BANK 1
tCH
tQMD
BANK 1
DQM
tAC
tAC
tOH
I/O
DOUT m
tAC
tOH
tHZ
tOH
DOUT m+1
DOUT m+2
tLZ
tRCD
tCAC
tRAS
tRQL
tRCD
tRP
tRAS
tRC
<ACT 0>
tCAC
tRC
<READ 0>
<PRE 0>
<ACT >
<READ>
<READA>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
54
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
COLUMN n
ROW
AUTO PRE
tAH
ROW
ROW
A10
BANK 0 OR 1
NO PRE
tAH
tAS
A11
(1)
(1)
COLUMN m
ROW
A0-A9
BANK 0
BANK 0
NO PRE
BANK 1
BANK 0
tCS
tCH
tCS
tDH
tDS
tDH
BANK 1
BANK 0
tCH
BANK 0
tCS
DQM
tDH
tDS
tDS
I/O
DIN 0m
DIN 0m+1
tDH
tDS
DIN 0m+2
DIN 0n
tRCD
tRCD
tRAS
tRAS
tRP
tRC
<ACT 0>
tRC
<WRIT 0>
<PRE 0>
<ACT >
<WRIT>
<WRITA>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
55
ISSI
IS42S16100
®
Read Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
ROW
AUTO PRE
tAH
BANK 0 AND 1
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
tQMD
BANK 1
BANK 0
tCH
BANK 0
UDQM
tQMD
tCS
tCH
LDQM
tAC
tLZ
I/O8-15
tAC
tHZ
tOH
tLZ
DOUT m+2
DOUT m
tAC
tLZ
I/O0-7
tRCD
tCAC
tAC
tOH
tOH
DOUT m+3
tAC
tOH
tOH
DOUT m
DOUT m+1
tQMD
tRQL
tRAS
tRCD
tRP
tRAS
tRC
tRC
<ACT>
<READ>
<READA>
<MASKU> <ENBU, MASKL> <MASKL>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
56
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
ROW
AUTO PRE
tAH
BANK 0 AND 1
ROW
ROW
A10
BANK 1
BANK 0
BANK 0 OR 1
NO PRE
tAH
tAS
A11
(1)
COLUMN m
ROW
A0-A9
tCS
BANK 1
BANK 1
BANK 1
BANK 0
BANK 0
tCH
BANK 0
UDQM
tCS
tCH
tDS
tDS
tDH
LDQM
I/O8-15
DIN m
tDH
DIN m+1
DIN m+3
tDH
tDS
tDH
tDS
DIN m
I/O0-7
tDH
tDS
DIN m+3
tRCD
tDPL
tRCD
tRAS
tRP
tRAS
tRC
tRC
<ACT>
<WRIT>
<WRITA>
<MASKL>
<MASK>
<ENB>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
57
ISSI
IS42S16100
®
Read Cycle, Write Cycle / Burst Read, Single Write
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
COLUMN n
tAH
tAH
tAS
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 0
NO PRE
ROW
A10
(1)
COLUMN m
ROW
A0-A9
A11
(1)
BANK 1
BANK 1
BANK 0
tCS
BANK 0
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
DOUT m
tLZ
tRCD
tAC
tAC
tDS
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tDH
DIN n
tHZ
tCAC
tDPL
tRAS
tRP
tRC
<ACT>
<READ>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
58
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
BANK 0 AND 1
NO PRE
tAH
tAS
A11
ROW
tAH
ROW
A10
(1)
COLUMN m
ROW
A0-A9
ROW
BANK 0 OR 1
BANK 1
BANK 1
BANK 1
BANK 1
BANK 0
BANK 0
tCS
tCH BANK 0
tQMD
BANK 0
DQM
tAC
tAC
tOH
I/O
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tHZ
tCAC
tRAS
tRQL
tRCD
tRP
tRAS
tRC
tRC
<ACT>
<READ>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
59
ISSI
IS42S16100
®
Read Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
tAH
ROW
AUTO PRE
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMN
ROW
A0-A9
BANK 1
BANK 1
BANK 1
BANK 0
BANK 0
tCS
BANK 0
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tCAC
tRAS
tHZ
tPQL
tRCD
tRP
tRAS
tRC
tRC
<ACT>
<READA>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
60
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Full Page
T0
T1
T2
T3
T4
T5
T6
T7
T8
T262
T263
T264
T265
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
tAH
NO PRE
ROW
A10
BANK 0 OR 1
tAH
tAS
A11
(1)
COLUMN
ROW
A0-A9
BANK 0
BANK 0
BANK 0
tCH
tCS
DQM
tAC
tAC
tOH
I/O
DOUT 0m
tAC
tOH
DOUT 0m+1
tAC
tOH
DOUT 0m-1
tAC
tOH
tOH
DOUT 0m
DOUT 0m+1
tLZ
tRCD
tCAC
(BANK 0)
tRAS
(BANK 0)
tRC
(BANK 0)
(BANK 0)
<ACT 0>
tHZ
tRBD
tRP
(BANK 0)
<READ0>
<BST>
<PRE 0>
Undefined
CAS latency = 3, burst length = full page
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
61
ISSI
IS42S16100
®
Read Cycle / Ping Pong Operation (Bank Switching)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
ROW
COLUMN
COLUMN
AUTO PRE
AUTO PRE
NO PRE
NO PRE
BANK 0 OR 1
BANK 0 OR 1
BANK 0
BANK 1
BANK 0
BANK1
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
ROW
A0-A9
tAS
tAH
ROW
tAH
tAS
A11
ROW
ROW
ROW
A10
(1)
(1)
BANK 0
BANK 1
tCS
BANK 0
tCH
tQMD
DQM
tAC
tLZ
tAC
tOH
I/O
DOUT 0m
tRRD
(BANK 0 TO 1)
tRCD
(BANK 0)
tOH
DOUT 0m+1
tAC
tOH
tOH
DOUT 1m
DOUT 1m+1
tCAC
(BANK 1)
tRCD
(BANK 1)
tCAC
(BANK 0)
tRAS
(BANK 0)
tRC
(BANK 0)
<ACT 0>
tAC
tHZ
tRQL
(BANK 0)
tRP
(BANK 0)
tRCD
(BANK 0)
tRAS
(BANK 0)
tRC
(BANK 0)
tRAS
(BANK 1)
tRC
(BANK 1)
<ACT1>
<READ 0>
<READA 0>
<READ 1>
<READA 1>
tRP
(BANK1)
<PRE 0>
<PRE 1>
<ACT 0>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
62
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
COLUMN
ROW
BANK 0 AND 1
tAH
NO PRE
ROW
A10
tAH
tAS
A11
(1)
ROW
A0-A9
ROW
BANK 1
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
BANK 0
BANK 0
BANK 1
BANK 0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDPL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRIT>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
63
ISSI
IS42S16100
®
Write Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
COLUMN
ROW
AUTO PRE
tAH
ROW
A10
ROW
tAH
tAS
A11
(1)
ROW
A0-A9
BANK 1
BANK 1
BANK 1
BANK 0
BANK 0
tCS
BANK 0
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDAL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRITA>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
64
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Full Page
T0
T1
T2
T3
T4
T5
T6
T259
T260
T261
T262
T263
T264
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
tAH
NO PRE
ROW
A10
BANK 0 OR 1
tAH
tAS
A11
(1)
COLUMN
ROW
A0-A9
BANK 0
BANK 0
BANK 0
tCH
tCS
DQM
tDS
I/O
tDH tDS
DIN 0m
tDH tDS
DIN 0m+1
tDH tDS
DIN 0m+2
tDH
DIN 0m-1
DIN 0m
tDPL
tRCD
tRAS
tRP
tRC
<ACT 0>
<WRIT0>
<BST>
<PRE 0>
Undefined
CAS latency = 3, burst length = full page
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
65
ISSI
IS42S16100
®
Write Cycle / Ping-Pong Operation (Bank Switching)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T11
T10
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
ROW
COLUMN
tAS
tAH
AUTO PRE
tAH
NO PRE
ROW
COLUMN
AUTO PRE
ROW
A10
ROW
tAS
A11
(1)
(1)
ROW
A0-A9
BANK 0
BANK 0
ROW
BANK 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
BANK 0
tCH
tCS
DQM
tDS
tDH tDS
DIN 0m
I/O
tDH tDS
DIN 0m+1
tRRD
(BANK 0 TO 1)
tRCD
(BANK 0)
tDH tDS
DIN 0m+2
tDH tDS
DIN 0m+3
tDH tDS
DIN 1m
tDH tDS
DIN 1m+1
tDH tDS
DIN 1m+2
tDH
DIN 1m+3
tDPL
(BANK 0)
tDPL
tRCD
(BANK 1)
tRCD
tRP
tRAS
(BANK 0)
tRC
(BANK 0)
tRAS
(BANK 0)
tRC
tRAS
(BANK 1)
tRC
(BANK 1)
<ACT 0>
<WRIT 0>
<WRITA 0>
<ACT 1>
<WRIT 1>
<WRITA 1>
<PRE 0>
<ACT 0>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
66
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
ROW
A0-A9
tAS
COLUMN o
COLUMN n
NO PRE
tAH
tAS
A11
(1)
(1)
tAH
ROW
A10
(1)
COLUMN m
BANK 1
BANK 0
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
BANK 0
NO PRE
BANK 1
BANK 1
BANK 0
AUTO PRE
tCS
tQMD
BANK 0
tCH
DQM
tAC
tLZ
tAC
tOH
I/O
DOUT m
tAC
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT n
DOUT n+1
tCAC
<ACT>
tCAC
<READ>
tOH
DOUT o
tOH
DOUT o+1
tHZ
tCAC
tRCD
tRAS
tRC
tAC
tRQL
tRP
<READ>
<READ>
<READA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
67
ISSI
IS42S16100
®
Read Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T11
T10
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
ROW
A0-A9
tAS
NO PRE
NO PRE
(1)
COLUMN o
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 1
BANK 0
BANK 0
BANK 0
BANK 1
BANK 0
tAH
tAS
A11
(1)
COLUMN n
tAH
ROW
A10
(1)
COLUMN m
BANK 1
BANK 0
tCS
tQMD
tCH
tQMD
DQM
tAC
tAC
tOH
tLZ
I/O
DOUT m
tCAC
tRCD
tRAS
tRC
<ACT>
tAC
tOH
tAC
tAC
tOH
DOUT m+1
tOH
DOUT n
DOUT o
DOUT o+1
tHZ
tCAC
tCAC
<READ>
tOH
tRQL
tRP
<READ>
<READ, MASK>
<READA, MASK>
<ENB>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
68
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Write Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
ROW
A0-A9
tAS
(1)
(1)
COLUMN n
COLUMN o
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
AUTO PRE
BANK 0 AND 1
NO PRE
NO PRE
BANK 1
BANK 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 0
BANK 0
BANK 1
BANK 0
BANK 0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH
tDS
DIN n
tDH tDS
tDH
DIN o
DIN o+1
tRCD
tRAS
tRC
<ACT>
tDPL
tRP
<WRIT>
<WRIT>
<MASK>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
69
ISSI
IS42S16100
®
Write Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
ROW
A0-A9
tAS
(1)
(1)
COLUMN n
COLUMN o
tAH
NO PRE
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
BANK 1
BANK 0
tCS
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 1OR 0
NO PRE
BANK 1
BANK 1
BANK 0
BANK 0
BANK 1
BANK 0
tCH
BANK 1
BANK 0
DQM
tDS
tDH tDS
DIN m
I/O
tDH tDS
DIN m+1
tDH
tDS
DIN n
tDH tDS
tDH
DIN o
DIN o+1
tRCD
tRAS
tRC
<ACT>
tDPL
tRP
<WRIT>
<WRIT>
<MASK>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
70
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCKS
tCL
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
tAH
AUTO PRE
BANK 0 AND 1
tAH
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
ROW
A10
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
BANK 0
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
tOH
DOUT m
DOUT m+1
tLZ
tRCD
tHZ
tCAC
tRAS
tRP
tRC
<ACT>
<READ>
<READ A>
<SPND>
<SPND>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
71
ISSI
IS42S16100
®
Write Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
tCKS
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
ROW
tAH
AUTO PRE
BANK 0 AND 1
tAH
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 0
BANK 1
BANK 0
BANK 0
ROW
ROW
A10
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
tCH
DQM
tDS
tDH
DIN m
I/O
tRCD
tDS
tDH
DIN m+1
tDPL
tRAS
tRAS
tRP
tRC
<ACT>
tRC
<WRIT, SPND> <SPND>
<WRITA, SPND>
<PRE>
<PALL>
<ACT >
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
72
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
ROW
tAH
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 0
NO PRE
BANK 0 OR 1
BANK 0
BANK 0
tCS
BANK 1
BANK 0
tCH
tQMD
DQM
tAC
tAC
tOH
I/O
DOUT m
tAC
tOH
tHZ
tOH
DOUT m+1
DOUT m+2
tLZ
tRCD
tCAC
tRAS
tRQL
tRCD
tRP
tRAS
tRC
<ACT 0>
tRP
<READ 0>
<PRE 0>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
73
ISSI
IS42S16100
®
Write Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
A0-A9
tAS
ROW
tAH
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMN m
ROW
BANK 0
NO PRE
BANK 0 OR 1
BANK 0
BANK 0
tCS
tCS
tCH
BANK 1
BANK 0
tCH
DQM
tDH
tDS
tDS
I/O
DIN 0m
tDH
tDS
DIN 0m+1
tDH
DIN 0m+2
tRCD
tRCD
tRAS
tRAS
tRP
tRC
<ACT 0>
tRP
<WRIT 0>
<PRE 0>
<ACT >
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
74
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
A0-A9
tAS
ROW
tAH
AUTO PRE
BANK 0 AND 1
tAH
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
BANK 1
BANK 0
BANK 0
ROW
ROW
A10
tAS
A11
(1)
COLUMN m
ROW
tCS
tQMD
tCS
tQMD
BANK 1
BANK 0
tCH
BANK 0
UDQM
tCH
LDQM
tAC
tLZ
I/O8-15
tAC
tHZ
tOH
DOUT m+2
DOUT m
tAC
tLZ
tAC
tOH
DOUT m
I/O0-7
tRCD
tCAC
tAC
tLZ
tHZ
tOH
DOUT m+3
tHZ
tOH
DOUT m+1
tQMD
tRAS
tRQL
tRCD
tRP
tRAS
tRP
tRC
<ACT>
<READ>
<READA>
<MASKU> <ENBU, MASKL> <MASKL>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
75
ISSI
IS42S16100
®
Write Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
tAS
ROW
tAH
AUTO PRE
BANK 0 AND 1
tAH
NO PRE
BANK 0 OR 1
BANK 1
BANK 0
BANK 1
ROW
ROW
A10
tAS
A11
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 0
tCS
BANK 0
tCH
BANK 1
BANK 0
UDQM
tCS
tCH
tDS
tDS
tDH
LDQM
I/O8-15
DIN m
tDH
DIN m+1
DIN m+3
tDH
tDS
tDH
tDS
DIN m
I/O0-7
tDH
tDS
DIN m+3
tRCD
tDPL
tRCD
tRAS
tRP
tRAS
tRP
tRC
<ACT>
<WRIT>
<WRITA>
<MASKL>
<MASK>
<ENB>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don't Care
Note 1: A8,A9 = Don't Care.
76
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
ISSI
IS42S16100
®
Read Cycle, Write Cycle / Burst Read, Single Write
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T11
T10
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
tAS
AUTO PRE
BANK 0 AND 1
NO PRE
BANK 0 OR 1
BANK 1
BANK 1
NO PRE
tAH
tAS
A11
COLUMN n
tAH
ROW
A10
(1)
(1)
COLUMN m
ROW
A0-A9
BANK 1
BANK 1
BANK 0
BANK 0
tCS
BANK 0
tQMD
tCH
BANK 0
DQM
tAC
I/O
tLZ
tRC
tAC
tDS
tOH
tOH
DOUT m
DOUT m+1
tDH
DIN n
tHZ
tCAC
tDPL
tRAS
tRP
tRC
<ACT>
<READ>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don't Care
Note 1: A8,A9 = Don't Care.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
77
ISSI
IS42S16100
®
ORDERING INFORMATION
Commercial Range: 0°° C to 70°° C
Frequency
Speed (ns)
Order Part No.
Package
166 MHz
143MHz
100 MHz
6
7
10
IS42S16100-6T
IS42S16100-7T
IS42S16100-10T
400-mil TSOP II
400-mil TSOP II
400-mil TSOP II
ORDERING INFORMATION
Industrial Range: -40°° C to 85°° C
Frequency
Speed (ns)
143MHz
100 MHz
7
10
Order Part No.
IS42S16100-7TI
IS42S16100-10TI
PackagE
400-mil TSOP II
400-mil TSOP II
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: [email protected]
www.issi.com
78
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01