10V45 10A Surface Mount Super Low Barrier Diode Features Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV. • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex. 10V45 . • Lead-free parts meet environmental standards of MIL-STD-19500 /228 TO-277B 0.264 (6.70) 0.248 (6.30) 2 3 0.028 (0.71) 0.016 (0.41) 0.216 (5.48) 0.208 (5.28) 0.163 (4.13) 0.151 (3.83) 1 0.073 (1.85) 0.069 (1.75) PIN 1 PIN 3 PIN 2 0.077 (1.96) 0.069 (1.76) 0.028 (0.71) 0.016 (0.41) 0.037 (0.95) 0.033 (0.85) Mechanical data 0.124 (3.15) 0.112 (2.85) • Epoxy : UL94-V0 rated flame retardant. . • Case : Molded plastic, TO-277B • Lead : Solder plated, solderable per MIL-STD-750, Method 2026 . • Polarity: Indicated by cathode band . • Mounting Position : Any. • Weight : Approximated 0.093 grams . 0.037 (0.95) 0.033 (0.85) 0.145 (3.69) 0.133 (3.39) 0.069 (1.74) 0.057 (1.44) 0.014 (0.35) 0.010 (0.25) 0.049 (1.25) 0.037 (0.95) Dimensions in inches and (millimeters) Maximum ratings and electrical characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Conditions Parameter Symbol 10V45 Marking code UNIT 10V45 Peak repetitive reverse voltage V RRM Working peak reverse voltage V RWM DC blocking voltage V RM RMS reverse voltage V R(RMS) 32 A IO 10 A I FSM 275 A Junction to ambient(1) R θJA 73 O C/W Junction to ambient(2) R θJA 31 O C/W T J, T STG -65 ~ +150 Forward rectified current Forward surge current Thermal resistance 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Operating and Storage temperature Parameter Reverse breakdown voltage Conditions I R = 0.5mA Symbol MIN. V (BR)R 45 I F = 8A, T J = 25 OC Forward voltage drop I F = 10A, T J = 25 OC VF I F = 10A, T J = 125 OC V R = V RRM T J = 25 OC Reverse current O IR V R = V RRM T J = 100 C V R = V RRM T J = 150 OC Note : 1.FR-4 PCB, 2oz.Copper. 2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm. 1 45 V O TYP. MAX. 400 420 C UNIT V 420 470 370 410 0.051 0.3 5 15 27 75 mV mA 10V45 10A Surface Mount Super Low Barrier Diode Rating and characteristic curves Fig. 1 - Forward Power Dissipation Fig. 2 - Instantaneous Forward Characteristics 100 Instantaneous Forward Current ,I F (A) 5 Power Dissipation,P D (W) 4 3 2 1 10 T A=125°C T A=100°C 1 T A=75°C T A=50°C T A=25°C 0.1 0 0.01 0 5 10 15 0 Average Forward Current,I F(AV) (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage ,V F (Volts) Fig. 3 - Reverse Characteristics Fig.4 - Forward Current Derating Curve Average Forward Current ,I F(AV) (A) 10 O T A=125 C O T A=100 C 1 O T A=75 C T A=50 OC 0.1 12 Based on Lead Temp(T L) 8 Note 2 4 Note 1 0 25 50 75 100 125 150 175 O T A=25 C 0.01 0 5 10 15 20 Ambient Temperature,T A ( OC) 25 30 35 40 45 Reverse Voltage,V R (V) Fig. 5 - Total Capacitance VS. Reverse Voltage Fig. 6 - Maximum Avalanche Power Curve 1000000 1000000 Maximum Avalanche Power,P M (W) Total Capacitance,C T (pF) Instantaneous Reverse Current,I R (mA) 100 10000 f = 1M Hz 1000 100 10 1 0.1 10000 1000 1 10 1 100 Reverse Voltage,V R (V) 10 100 1000 Pulse Duration ,T P (us) 2 10000 10V45 10A Surface Mount Super Low Barrier Diode ■ TO-277B foot print A G F B E C D A B C D E F G 0.185 (4.70) 0.142 (3.60) 0.152 (3.87) 0.260 (6.60) 0.055 (1.40) 0.035 (0.90) 0.031 (0.80) Dimensions in inches and (millimeters) 3