ASEMI SVM1045

10V45
10A Surface Mount Super Low Barrier Diode
Features
Outline
• Electrostatic discharge (ESD) test under IEC6100-4-2
standard >16ΚV.
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex. 10V45 .
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
TO-277B
0.264 (6.70)
0.248 (6.30)
2
3
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.163 (4.13)
0.151 (3.83)
1
0.073 (1.85)
0.069 (1.75)
PIN 1
PIN 3
PIN 2
0.077 (1.96)
0.069 (1.76)
0.028 (0.71)
0.016 (0.41)
0.037 (0.95)
0.033 (0.85)
Mechanical data
0.124 (3.15)
0.112 (2.85)
• Epoxy : UL94-V0 rated flame retardant.
.
• Case : Molded plastic, TO-277B
• Lead : Solder plated, solderable per MIL-STD-750,
Method 2026 .
• Polarity: Indicated by cathode band .
• Mounting Position : Any.
• Weight : Approximated 0.093 grams .
0.037 (0.95)
0.033 (0.85)
0.145 (3.69)
0.133 (3.39)
0.069 (1.74)
0.057 (1.44)
0.014 (0.35)
0.010 (0.25)
0.049 (1.25)
0.037 (0.95)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Conditions
Parameter
Symbol
10V45
Marking code
UNIT
10V45
Peak repetitive reverse voltage
V RRM
Working peak reverse voltage
V RWM
DC blocking voltage
V RM
RMS reverse voltage
V R(RMS)
32
A
IO
10
A
I FSM
275
A
Junction to ambient(1)
R θJA
73
O
C/W
Junction to ambient(2)
R θJA
31
O
C/W
T J, T STG
-65 ~ +150
Forward rectified current
Forward surge current
Thermal resistance
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Operating and Storage temperature
Parameter
Reverse breakdown voltage
Conditions
I R = 0.5mA
Symbol
MIN.
V (BR)R
45
I F = 8A, T J = 25 OC
Forward voltage drop
I F = 10A, T J = 25 OC
VF
I F = 10A, T J = 125 OC
V R = V RRM T J = 25 OC
Reverse current
O
IR
V R = V RRM T J = 100 C
V R = V RRM T J = 150 OC
Note : 1.FR-4 PCB, 2oz.Copper.
2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.
1
45
V
O
TYP.
MAX.
400
420
C
UNIT
V
420
470
370
410
0.051
0.3
5
15
27
75
mV
mA
10V45
10A Surface Mount Super Low Barrier Diode
Rating and characteristic curves
Fig. 1 - Forward Power Dissipation
Fig. 2 - Instantaneous Forward
Characteristics
100
Instantaneous Forward Current ,I F (A)
5
Power Dissipation,P D (W)
4
3
2
1
10
T A=125°C
T A=100°C
1
T A=75°C
T A=50°C
T A=25°C
0.1
0
0.01
0
5
10
15
0
Average Forward Current,I F(AV) (A)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage ,V F (Volts)
Fig. 3 - Reverse Characteristics
Fig.4 - Forward Current Derating Curve
Average Forward Current ,I F(AV) (A)
10
O
T A=125 C
O
T A=100 C
1
O
T A=75 C
T A=50 OC
0.1
12
Based on Lead Temp(T L)
8
Note 2
4
Note 1
0
25
50
75
100
125
150
175
O
T A=25 C
0.01 0
5
10
15
20
Ambient Temperature,T A ( OC)
25
30
35
40
45
Reverse Voltage,V R (V)
Fig. 5 - Total Capacitance VS.
Reverse Voltage
Fig. 6 - Maximum Avalanche Power Curve
1000000
1000000
Maximum Avalanche Power,P M (W)
Total Capacitance,C T (pF)
Instantaneous Reverse Current,I R (mA)
100
10000
f = 1M Hz
1000
100
10
1 0.1
10000
1000
1
10
1
100
Reverse Voltage,V R (V)
10
100
1000
Pulse Duration ,T P (us)
2
10000
10V45
10A Surface Mount Super Low Barrier Diode
■ TO-277B foot print
A
G
F
B
E
C
D
A
B
C
D
E
F
G
0.185 (4.70)
0.142 (3.60)
0.152 (3.87)
0.260 (6.60)
0.055 (1.40)
0.035 (0.90)
0.031 (0.80)
Dimensions in inches and (millimeters)
3