LITE-ON SEMICONDUCTOR B120 thru B160 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0 For use in low voltage, high frequency inverters, SMA A B C free wheeling, and polarity protection applications G MECHANICAL DATA H Case : Molded plastic Polarity : Indicated by cathode band Weight : 0.002 ounces, 0.064 grams D F E DIM. MIN. MAX. A 4.06 4.57 B 2.29 2.92 C 1.27 1.63 D 0.15 0.31 E 4.83 5.59 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL B120 B130 B140 B150 B160 UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward @TL =100 C Rectified Current VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 V V V Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) Maximum forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =100 C Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range I(AV) 1.0 A IFSM 30 A VF 0.7 0.5 V IR 0.5 10 mA CJ 110 pF R0JL 20 C/W TJ TSTG NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal Resistance Junction to Lead. -55 to +125 -55 to +150 -55 to +150 C C REV. 4, Apr-2005, KSHA01 RATING AND CHARACTERISTIC CURVES B120 thru B160 FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 0.75 0.50 B120 to B140 B150 to B160 0.25 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.00 25 50 75 100 125 150 180 PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 1.00 30 20 10 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 FIG.3 - TYPICAL FORWARD CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL JUNCTION CAPACITANCE 1000 10 CAPACITANCE , (pF) B120 to B140 B150 to B160 1.0 0.1 100 TJ = 25 C TJ = 25 C F= 1MHz PULSEWIDTH:300us .01 10 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 1.6 0.1 1.8 1.0 4.0 10.0 100 REVERSE VOLTAGE , (VOLTS) INSTANTANEOUS FORWARD VOLTAGE , (VOLTS) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, (mA) INSTANTANEOUS FORWARD CURRENT ,(A) 10 NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE , C 10 TJ = 125 C TJ = 100 C 1.0 0.1 0.01 TJ = 25 C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) REV. 4, Apr-2005, KSHA01