MBR1030 thru MBR1045 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR1030 MBR1035 MBR1040 MBR1045 VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC V 30 35 40 45 Characteristics 10 A 150 A 10000 V/us IF=20A @TJ=25oC IF=20A @TJ=125oC 0.84 0.57 V @TJ=25oC @TJ=125oC 0.1 15 mA @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) 2.5 CJ Typical Junction Capacitance (Note 2) 400 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit Maximum Average Forward Rectified Current VF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. Thermal Resistance Junction To Case. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any C C MBR1030 thru MBR1045 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 8 6 4 RESISTIVE OR INDUCTIVE LOAD 2 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 175 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 100 C 1.0 TJ = 75 C 0.1 TJ = 25 C 0.01 0.001 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25 C, f= 1MHz 100 0.1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , (VOLTS) 10000 CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 1 4 10 REVERSE VOLTAGE , VOLTS 100 1.0