MA88V11B EL DRIVER Line-up & Specification V1.0 MosArt SEMICONDUCTOR CORP. 2000 All rights reserved MosArt MA88V11B EL DRIVER BONDING DIAGRAM EL IND VDD VSS OSC SELF EN Chip size : 808um * 665um Pad size : 90um * 90um FEATURES OVERVIEW 3V battery operation The MA88V11B is designed for driving EL No external R-C required for oscillation on watch’s back light. The operating voltage Two EL driving frequency can be selected is 3V. An inductor is used to generate the high to change the colors of EL lights 3 seconds delay after EN released voltage, and one diode, 2 transistors and a resistor are necessary. The EL deriving frequency can be selected for changing the color of EL lights. MA88V11B can be selected for normal trigger or delay 3 seconds. MosArt Semiconductor Corp. Spec. 1 MosArt MA88V11B EL DRIVER PIN DESCRIPTION Pin Pin name Pin description 1 EL Output for EL charge 2 VDD Chip Power positive 3 OSC Oscillator pin 4 EN Enable pin, High enable. (*note1 ) 5 SELF EL driving frequency selection(*note1 ) 6 VSS Chip power ground 7 IND Output for EL discharge *Note1 : Built in pull down resistor OPERATION DESCRIPTION 1) EL driving frequency selection SELF Floating 1 2) EL driving frequency 500Hz 1000Hz Color of EL lights Green Blue Trigger mode EN No connect EN pin connect a capacitor to VDD Trigger mode Normal 3 sec. delay Operation in 3V use 0.1uf capacitor. MosArt Semiconductor Corp. Spec. 2 MosArt (i) MA88V11B EL DRIVER Normal mode EN EL IND EL LAMP ON (ii) Delay mode ( EN pin connect a capacitor to VDD ) EN EL IND EL LAMP ON Delay 3 second MosArt Semiconductor Corp. Spec. 3 MosArt MA88V11B EL DRIVER APPLICATION CIRCUIT (1) Operation voltage 3V, normal trigger mode 2mH/48Ω L1 EL 1N4148 10K D1 R1 Q1 Q2 EL IND VDD VSS MA88V11B OSC SELF EN 3V (2) Operation voltage 3V, delay 3 seconds mode L1 2mH/48Ω EL 1N4148 D1 10K R1 Q1 Q2 EL IND VDD VSS MA88V11B 0.1uf OSC SELF EN 3V MosArt Semiconductor Corp. Spec. 4 MosArt MA88V11B EL DRIVER PAD DIAGRAM (271,549.3) (629.4,549.3) EL (203.4,393.6) IND VDD (176.6,256) VSS OSC (201.6,115) (808,665) SELF (722.8,396.5) (604.4,260.2) EN (0,0) Chip size : 808um×665um Pad size : 90um×90um Substrate connect to VSS NO NAME X Y 1 EL 271 549.3 2 VDD 203.4 393.6 3 OSC 176.6 256 4 EN 201.6 115 5 SELF 604.4 260.2 6 VSS 722.8 396.5 7 IND 629.4 549.3 MosArt Semiconductor Corp. Spec. 5 MosArt MA88V11B EL DRIVER PACKAGE (a) SOT26 IND 2 VSS 3 EN (88V11B) 1 EL 6 VDD 5 OSC 4 Unit : mm 0.4 2.8 0.8 1.1 1.9 2.9 1.6 (b) SOT28 EN 2 OSC 3 VDD 4 EL (88V11B) 1 SELF 8 NC 7 VSS 6 IND 5 Unit : mm 0.8 0.4 0.65 2.9 1.1 2.8 1.6 MosArt Semiconductor Corp. Spec. 6 MosArt MA88V11B EL DRIVER (c) SOP EL 2 VDD 3 OSC 4 EN IND 8 VSS 7 NC 6 SELF 5 (88V11B) 1 Unit : mm 1.75 5 0.51 1.27 4 6.2 (d) MSOP EL 2 VDD 3 OSC 4 EN (88V11B) 1 IND 8 VSS 7 NC 6 SELF 5 Unit : mm 1.02 3 0.3 0.65 3 4.9 MosArt Semiconductor Corp. Spec. 7 MosArt MA88V11B EL DRIVER DC CHARACTERISTICS Item Symbol Condition Min Typ Max Oscillation frequency Fosc Build-in RC oscillation Operating voltage VDD Standby current Istb Operating current (3.0V) Iop High level input voltage Vih SELF, EN 0.8*Vdd Vdd V Low level input voltage Vil SELF, EN 0 0.2*Vdd V High level input current (1) Iih1 SELF 0 0.1 uA High level input current (2) Iih2 EN Low level input current Iil SELV, SELF, EN Output drive current (3.0V) Ioh EL, IND Voh=2.2V 225 uA Output sink current (3.0V) Iol EL, IND Vol=0.8V 11.2 mA 1050 1.5 Unit KHz 3.0 3.3V V VDD=3V 0 0.1 uA EN=VDD(3V) 889 uA 0.1 0 uA 0.2 MosArt Semiconductor Corp. Spec. uA 8