+ PIN 3 CASE PIN 2 Positive CT Features PIN 1 • Low forward voltage drop. PIN 3 • High surge current capacity. • High current capability. • FEP16AT - FEP16JT FEP16AT - FEP16JT PIN 1 CASE PIN 2 Negative CT Suffix "A" 1 2 3 TO-220AB High reliability. PIN 1 AC PIN 3 CASE PIN 2 Doubler Suffix "D" Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM Tstg TJ TA = 25°C unless otherwise noted Value Parameter Units 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT 50 100 150 200 300 400 500 600 Maximum Repetitive Reverse Voltage Average Rectified Forward Current, .375 " lead length @ TA = 100°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature V 16 A 200 A -55 to +150 -55 to +150 °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 8.33 W RθJA Thermal Resistance, Junction to Ambient 15 °C/W RθJL Thermal Resistance, Junction to Lead 2.2 °C/W Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 16AT VF trr IR CT Forward Voltage @ 8.0A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 100°C Total Capacitance VR = 4.0. f = 1.0 MHz 2001 Fairchild Semiconductor Corporation 16BT 16CT 16DT 16FT 0.95 Units 16GT 16HT 1.3 35 16JT 1.5 50 ns µA µA 10 500 85 V 60 pF FEP16AT - FEP16JT, Rev. C FEP16AT - FEP16JT 20 16 12 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 8 4 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 175 Figure 1. Forward Current Derating Curve Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics 200 160 120 80 40 0 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 2. Non-Repetitive Surge Current Reverse Characteristics 1000 100 FEP16AT-FEP16DT 10 Reverse Current, IR [mA] Forward Current, IF [A] 1 FEP16FT-FEP16JT 1 0.1 TA = 25 º C Pulse Width = 300µ µs 2% Duty Cycle 0.01 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage, VF [V] 100 T A = 100 ºC 10 1 T A = 25º C 0.1 1.6 1.8 Figure 3. Forward Voltage Characteristics 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, CT [pF] 100 90 80 70 FEP16AT-FEP16DT 60 50 FEP16FT-FEP16JT 40 1 2 5 10 20 Reverse Voltage, VR [V] 50 100 Figure 5. Total Capacitance 50Ω NONINDUCTIVE 50Ω NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation FEP16AT - FEP16JT, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4