Order this document by CA2810C/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for amplifier applications in 50 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. • Specified Characteristics at VCC = 24 V, TC = 25°C: • Frequency Range — 10 to 450 MHz Output Power — 1 W Typ @ 1 dB Compression, f = 200 MHz Power Gain — 34 dB Typ @ f = 50 MHz PEP — 400 mW Typ @ –32 dB IMD Noise Figure — 5 dB Max @ f = 300 MHz 34 dB 10 – 450 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIER • All Gold Metallization for Improved Reliability MAXIMUM RATINGS Rating Symbol Value Unit VCC 28 Vdc RF Power Input Pin +5 dBm Operating Case Temperature Range TC – 20 to +100 °C Storage Temperature Range Tstg – 40 to +100 °C DC Supply Voltage CASE 714F–03, STYLE 1 [CA (POS. SUPPLY)] ELECTRICAL CHARACTERISTICS (TC = 25°C, VCC = 24 V, 50 Ω system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 10 — 450 MHz Gain Flatness (f = 10– 450 MHz) FL — — ±1.5 dB Power Gain (f = 50 MHz) PG 33 34 35 dB Noise Figure, Boradband (f = 300 MHz) NF — — 5 dB Po1 dB 800 1000 — mW ITO — 43 — dBm Input/Output VSWR (f = 10– 450 MHz) VSWR — — 2:1 — Second Harmonic Distortion (Po = 100 mW, f2H = 10 – 300 MHz) dso — – 55 – 45 dB Power Output — 1 dB Compression (f = 200 MHz) Third Order Intercept (See Figure 10, f1 = 300 MHz) Reverse Isolation (f = 10– 450 MHz) — — 40 — dB Peak Envelope Power (Two Tone Distortion Test — See Figure 10) (f = 10 – 450 MHz @ –32 dB IMD) PEP — 400 — mW Supply Current ICC 270 310 330 mA RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 CA2810C 1 TYPICAL CHARACTERISTICS 35.5 1.5 35.0 1.0 34.5 0.5 ∆ GAIN (dB) PG, POWER GAIN (dB) (RELATIVE TO FREQUENCY RESPONSE AT 25°C) 34.0 33.5 TC = 25°C – 0.5 VCC = 28 V – 1.0 33.0 15 V 24 V 28 V 32.5 0.0 32.0 – 2.0 0 100 200 300 400 500 600 – 40°C + 100°C – 1.5 700 0 100 200 32 6.5 30 6.0 28 TC = 25°C 26 15 V 24 V 28 V 22 100 200 300 400 500 4.5 TC = 25°C 4.0 15 V 24 V 28 V 600 3.0 700 0 100 200 43 30 41 28 PEP, POWER (dBm) 32 39 TC = 25°C 15 V 24 V 28 V 33 100 200 300 400 500 600 700 f, FREQUENCY (MHz) Figure 5. Third Order Intercept versus Voltage CA2810C 2 500 600 700 26 TC = 25°C 24 15 V 24 V 28 V 22 20 31 0 400 Figure 4. Noise Figure versus Voltage 45 35 300 f, FREQUENCY (MHz) Figure 3. 1 dB Compression versus Voltage 37 700 5.0 3.5 20 0 600 5.5 f, FREQUENCY (MHz) ITO, 3RD ORDER INTERCEPT POINT (dBm) 500 Figure 2. Relative Power Gain versus Temperature NF, NOISE FIGURE (dB) Po1dB, POWER OUTPUT (dBm) Figure 1. Power Gain versus Voltage 18 400 f, FREQUENCY (MHz) f, FREQUENCY (MHz) 24 300 18 0 100 200 300 400 500 600 700 f, FREQUENCY (MHz) Figure 6. Peak Envelope Power versus Voltage MOTOROLA RF DEVICE DATA 5 – 45 Pout = + 20 dBm – 50 4 DELAY (ns) HARMONIC LEVEL RELATIVE TO FUNDAMENTAL (dB) 6 – 40 – 55 – 60 3 2 TC = 25°C VCC = 24 V TC = 25°C – 65 1 15 V 24 V 28 V – 70 0 – 75 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 f, FREQUENCY (MHz) fH, FREQUENCY (MHz) Figure 7. Second Harmonic Distortion versus Voltage Figure 8. Group Delay versus Frequency Biased at 24 Volts T = 25°C Zo = 50Ω S11 S21 S12 S22 Frequency (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 10 – 13.8 3.5 34.2 – 145 – 46 – 131 – 13.5 8.2 50 – 16.0 – 3.0 34.2 150 – 47 – 172 – 18.5 4.6 100 – 14.4 – 14 34.4 88 – 48 102 – 14.5 – 9.2 200 – 13.2 – 50 34.6 2 – 42 35 – 13.2 – 80 300 – 13.9 – 79 35.0 – 80 – 46 65 – 16.7 – 49 400 – 14.1 – 115 35.0 – 80 – 48 – 44 – 14.2 11 450 – 16.2 – 122 34.6 120 – 53 – 82 – 13.8 – 46 Magnitude in dB, Phase Angle in degrees. Table 1. S–Parameters Po PIN CONFIGURATION IMD 1 2 3 4 5 6 7 8 9 INPUT OUTPUT f1 0.01 µF VCC Figure 9. External Connections MOTOROLA RF DEVICE DATA f2 2 f2 – f1 ITO = Po + IMD / 2 @ IMD > 60 dB PEP = 4 x Po @ IMD = – 32 dB Figure 10. Intermodulation Test CA2810C 3 PACKAGE DIMENSIONS –A– Q 2 PL 0.25 (0.010) S –Z– –F– S T F A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M V J R B 6 32UNC–2B U 1 2 3 2 PL 0.25 (0.010) 5 M Z T A M 7 8 9 C K –E– W N –T– G L P D 7 PL 0.51 (0.020) M T A M X –X– DIM A B C D E F G J K L N P Q R S U V W INCHES MIN MAX ––– 1.775 ––– 1.085 ––– 0.870 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.330 0.370 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 ––– 0.595 1.500 BSC 0.200 BSC 0.209 0.239 0.425 ––– STYLE 1: PIN 1. 2. 3. 5. 7. 8. 9. MILLIMETERS MIN MAX ––– 45.08 ––– 27.56 ––– 22.10 0.46 0.56 11.81 12.95 7.62 8.25 2.54 BSC 3.96 BSC 8.38 9.40 25.40 BSC 4.19 BSC 2.54 BSC 3.76 4.27 ––– 15.11 38.10 BSC 5.08 BSC 5.31 6.07 10.80 ––– RF INPUT GROUND GROUND +VCC GROUND GROUND RF OUTPUT CASE 714F–03 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. CA2810C 4 ◊ *CA2810C/D* CA2810C/D MOTOROLA RF DEVICE DATA