KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz (TYP.) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 30 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 20 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 ICBO Collector Cut-off Current VCB=30V, IE=0 Typ. Units V V V IEBO Emitter Cut-off Current VEB=4V, IC=0 hFE DC Current Gain VCE=6V, IC=1mA VBE(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.72 VCE(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.1 fT Current Gain Bandwidth Product VCE=6V, IC=1mA 40 400 Max. 0.1 µA 0.1 µA 240 V 0.3 600 V MHz Cob Output Capacitance VCB=6V, IE=0, f=1MHz 1.2 Cc·rbb’ Collector-Base Time Constant VCE=6V, IC=1mA f=31.9MHz 12 15 pF ps NF Noise Figure VCE=6V, IC=1mA RS=50Ω, f=100MHz 3.0 5.0 dB hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120~ 240 ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 KSC1674 Typical Characteristics 20 1000 IB = 110µA VCE = 6V IB = 100µA 16 IB = 90µA 14 IB = 80µA 12 IB = 70µA 10 IB = 60µA 8 IB = 50µA 6 IB = 40µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 18 IB = 30µA 4 IB = 20µA 2 IB = 10µA 100 10 0 2 4 6 8 10 12 14 16 18 1 20 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 VCE = 6V 10 IC=10IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0 VBE(sat) 1 VCE(sat) 0.1 1 0.1 0.0 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 VBE[V],BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 Cob[pF], CAPACITANCE 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10000 f=1MHz IE=0 VCE=6V 1000 100 10 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. B2, November 2002 KSC1674 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1