1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range 1.0 4.0 -65 to +200 A A °C TJ Operating Junction Temperature 175 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic Max Units 1N/FDLL 914/A/B / 4148 / 4448 PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance trr 1N916A/B/4448 1N914A/B/4148 Reverse Recovery Time 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Min IR = 100 µA IR = 5.0 µA IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 20 mA IF = 100 mA VR = 20 V VR = 20 V, TA = 150°C VR = 75 V Max Units 720 730 1.0 1.0 1.0 1.0 25 50 5.0 V V mV mV V V V V nA µA µA 2.0 4.0 4.0 pF pF ns 100 75 620 630 VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60mA), Irr = 1.0 mA, RL = 100Ω Typical Characteristics 160 120 o o T a= 25 C Reverse Current, IR [nA] Reverse Voltage, VR [V] Ta=25 C 150 140 130 120 100 80 60 40 20 0 110 1 2 3 5 10 20 30 50 Reverse Current, IR [uA] 30 50 70 100 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V 550 750 o o Ta= 25 C Ta= 25 C 500 Forward Voltage, VF [mV] Forward Voltage, VR [mV] 20 R everse V oltage, V R [V] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA 450 400 350 300 250 10 100 700 650 600 550 500 450 1 2 3 5 10 20 30 50 100 Forward Current, IF [uA] Figure 3. Forward Voltage vs Forward Current VF - 1 to 100 uA 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, I F [m A] Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode (continued) Typical Characteristics (continued) 900 1.6 o Forward Voltage, VF [mV] Forward Voltage, V F [mV] Ta= 25 C 1.4 1.2 1.0 0.8 Typical 800 o Ta= -40 C 700 o Ta= 25 C 600 500 o Ta= +65 C 400 300 0.6 10 20 30 50 100 200 300 500 0.01 800 0.3 0.1 0.03 Forward Current, IF [mA] 3 1 10 Forward Current, IF [mA] Figure 5. Forward Voltage vs Forward Current VF - 10 to 800 mA 0.90 Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (-40 to +65 Deg C) 4.0 o o Reverse Recovery Time, t rr [ns] TA = 25 C Ta = 25 C Total Capacitance (pF) 3.5 3.0 0.85 2.5 2.0 0.80 1.5 1.0 0.75 0 2 4 6 8 10 12 10 14 REVERSE VOLTAGE (V) 30 40 50 60 IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs Reverse Recovery Current 500 Power Dissipation, PD [mW] 500 400 Current (mA) 20 Reverse Recovery Current, Irr [mA] 400 300 DO-35 300 IF( 200 AV ) - A VE R AG E RE C D CU R RE 100 NT - mA 100 0 0 50 SOT-23 200 TIFIE 100 150 0 0 50 100 150 o Ambient Temperature ( C) Figure 9. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) o Temperature [ C] Figure 10. Power Derating Curve 200 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5