FAIRCHILD KST4401

KST4401
KST4401
Switching Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
600
mA
PC
Collector Dissipation
350
mW
TSTG
Storage Temperature
150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
60
BVCEO
* Collector-Emitter Breakdown Voltage
IC=1.0mA, IB=0
40
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
6
IBEV
Base Cut-off Current
VCE=35V, VEB=0.4V
ICEX
Collector Cut-off Current
VCE=35V, VEB=0.4V
hFE
* DC Current Gain
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
20
40
80
100
40
Max.
Units
V
V
V
100
nA
100
nA
300
0.4
0.75
V
V
0.95
1.2
V
V
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VBE (sat)
* Base-Emitter Saturation Voltage
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.75
fT
Current Gain Bandwidth Product
IC=20mA, VCE=10V
f=100MHz
250
Cob
Output Capacitance
VCB=5V, IE=0, f=100KHz
6.5
pF
tON
Turn On Time
VCC=30V, VBE=2V
IC=150mA, IB1=15mA
35
ns
tOFF
Turn Off Time
VCC=30V, IC=150mA
IB1=IB2=15mA
255
ns
MHz
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Marking
2X
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST4401
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
hFE, DC CURRENT GAIN
1000
VCE = 1V
100
10
1
10
100
1000
10
IC = 10 IB
VBE(sat)
1
0.1
VCE (sat)
0.01
1
10
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
100
1000
IC[mA], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
10000
IE = 0
f = 100KHz
Ccb [pF], CAPACITANCE
10
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Base Capacitance
©2002 Fairchild Semiconductor Corporation
VCE = 10V
1000
100
10
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A2, November 2002
KST4401
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1