PHILIPS PHD16N03T

PHD16N03T
TrenchMOS™ standard level FET
Rev. 01 — 18 August 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHD16N03T in SOT428 (D-PAK).
1.2 Features
■ TrenchMOSTM technology.
■ Fast Switching
1.3 Applications
■ DC-to-DC converters
■ General purpose switch.
1.4 Quick reference data
■ VDS ≤ 30 V
■ Ptot ≤ 32.6 W
■ ID ≤ 13.1 A
■ RDSon ≤ 100 mΩ.
2. Pinning information
Table 1:
Pinning - SOT428, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base;
connected to drain (d)
Simplified outline
Symbol
mb
[1]
d
g
2
1
Top view
3
MBK091
SOT428 (D-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
MBB076
s
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 175 °C
-
30
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
30
V
VGS
gate-source voltage (DC)
-
±20
V
VGSM
peak gate-source voltage
tp ≤ 50 µs; pulsed; duty cycle = 25%
-
±30
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
13.1
A
Tmb = 100 °C; VGS = 10 V; Figure 2
-
9.2
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
52.4
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
32.6
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
-
13.1
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
52.4
A
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
2 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa16
120
03aa24
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
200
Tmb (°C)
0
P tot
P der = ----------------------- × 100%
P
°
50
100
150
200
Tmb (°C)
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03an46
102
ID
(A)
tp = 10 µ s
Limit RDSon = VDS / ID
10
100 µ s
DC
1 ms
10 ms
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
3 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to mounting base Figure 4
-
-
4.6
K/W
Rth(j-a)
thermal resistance from junction to ambient
SOT428 minimum footprint;
vertical in still air;
mounted on a PCB
-
75
-
K/W
SOT404 minimum footprint;
vertical in still air;
mounted on a PCB
-
50
-
K/W
4.1 Transient thermal impedance
03an45
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
δ=
P
0.05
tp
T
0.02
10-1
10-5
t
tp
single pulse
T
10-4
10-3
10-2
tp (s)
10-1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
4 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
5. Characteristics
Table 4:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 250 µA; VGS = 0 V
Tj = 25 °C
30
-
-
V
Tj = −55 °C
27
-
-
V
ID = 1 mA; VDS = VGS; Figure 9
V
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
-
0.05
10
µA
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
-
-
500
µA
-
10
100
nA
Tj = 25 °C
-
72
100
mΩ
Tj = 175 °C
-
137
190
mΩ
ID = 15 A; VDD = 15 V; VGS = 10 V;
Figure 13
-
5.2
-
nC
-
2.6
-
nC
-
1.2
-
nC
VGS = 0 V; VDS = 30 V; f = 1 MHz;
Figure 11
-
180
-
pF
-
85
-
pF
-
60
-
pF
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 13 A; Figure 7 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
VDD = 15 V; RL = 0.6 Ω;
VGS = 10 V; RG = 56 Ω
-
6
-
ns
-
45
-
ns
turn-off delay time
-
12
-
ns
fall time
-
23
-
ns
-
1
1.2
V
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 12
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
5 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
03an47
20
Tj = 25 °C
ID
(A)
03an49
20
10 V
VDS > ID x RDSon
ID
(A)
8V
15
15
7V
10
10
6V
5
5
5V
175 °C
VGS = 4.5 V
Tj = 25 °C
0
0
0
0.5
1
1.5
0
2
2
4
6
8
VDS (V)
Tj = 25 °C
10
VGS (V)
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03an48
150
VGS = 7 V
Tj = 25 °C
RDSon
7.5 V
(mΩ)
a
8V
100
03aa27
2
1.5
9V
10 V
1
50
0.5
0
0
0
5
10
15
ID (A)
20
Tj = 25 °C
-60
60
120
Tj (°C)
180
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
0
Rev. 01 — 18 August 2003
6 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
5
ID
(A)
VGS(th)
(V)
4
max
10-2
3
typ
10-3
2
min
10-4
1
10-5
0
10-6
-60
03aa35
10-1
0
60
120
Tj (°C)
180
min
0
2
typ
max
4
VGS (V)
6
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03an51
103
C
(pF)
Ciss
102
Coss
Crss
10
10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
7 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
03an50
20
IS
(A)
03an52
10
VGS = 0 V
VGS
ID = 15 A
(V)
Tj = 25 °C
8
15
VDD = 15 V
6
10
4
5
175 °C
2
Tj = 25 °C
0
0
0
0.5
1
VSD (V)
1.5
Tj = 25 °C and 175 °C; VGS = 0 V
0
4
QG (nC)
6
ID = 15 A; VDD = 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
2
Rev. 01 — 18 August 2003
8 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
6. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A2
A
A1
b2
E1
mounting
base
D1
D
HE
L2
2
L1
L
1
3
b1
w M A
b
c
e
e1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1(1)
A2
b
b1
b2
c
D
D1
min.
E
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.0
6.73
6.47
E1
e
e1
4.81 2.285 4.57
4.45
HE
L
L1
min.
L2
w
y
max.
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
01-12-11
Fig 14. SOT428.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
9 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
7. Revision history
Table 5:
Revision history
Rev Date
01
20030818
CPCN
Description
-
Product data; initial version (9397 750 11672)
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
10 of 12
PHD16N03T
Philips Semiconductors
TrenchMOS™ standard level FET
8. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
9. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
10. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11672
Rev. 01 — 18 August 2003
11 of 12
Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 18 August 2003
Document order number: 9397 750 11672