PH6325L N-channel TrenchMOS™ logic level FET Rev. 01 — 28 April 2004 M3D748 Preliminary data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Optimized for use in DC-to-DC converters ■ Low threshold voltage ■ Very low switching and conduction losses ■ Low thermal resistance. 1.3 Applications ■ DC-to-DC converters ■ Voltage regulators ■ Switched-mode power supplies ■ Notebook computers. 1.4 Quick reference data ■ VDS ≤ 25 V ■ Qgd = 3.3 nC (typ) ■ RDSon ≤ 6.3 mΩ (VGS = 10 V) ■ ID ≤ 78.7 A ■ Qg(tot) = 13.3 nC (typ) ■ RDSon ≤ 9.5 mΩ (VGS = 4.5 V). 2. Pinning information Table 1: Pinning - SOT669 (LFPAK), simplified outline and symbol Pin Description 1,2,3 source (s) 4 gate (g) mb mounting base; connected to drain (d) Simplified outline Symbol d mb g MBB076 1 2 Top view 3 4 MBL286 SOT669 (LFPAK) s PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number PH6325L Package Name Description Version LFPAK Plastic single-ended surface mounting package; 4 leads SOT669 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 25 °C ≤ Tj ≤ 150 °C - 25 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 78.7 A Tmb = 100 °C; VGS = 10 V; Figure 2 - 49.6 A Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 236 A Tmb = 25 °C; Figure 1 - 62.5 W storage temperature −55 +150 °C junction temperature −55 +150 °C VDS drain-source voltage (DC) VGS gate-source voltage ID drain current (DC) IDM peak drain current Ptot total power dissipation Tstg Tj Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C - 52 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 208 A - 115 mJ - 1.2 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 34 A; tp = 0.15 ms; VDD = 25 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C EDS(AL)R repetitive drain-source avalanche energy unclamped inductive load; ID = 3.4 A; tp = 0.015 ms; VDD = 25 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C [1] [2] [1] [2] Duty cycle is limited by the maximum junction temperature. Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short bursts, not every switching cycle. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 2 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 03aa15 120 03aa23 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 Tmb (°C) 0 P tot P der = ----------------------- × 100% P ° 50 100 200 Tmb (°C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 003aaa559 103 ID (A) 150 Limit RDSon = VDS / ID tp = 10 µs 102 100 µs DC 1 ms 10 10 ms 100 ms 1 10-1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 3 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to mounting base Figure 4 Rth(j-mb) Min Typ Max Unit - - 2 K/W 5.1 Transient thermal impedance 003aaa560 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 δ= P single pulse tp T t tp T 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 4 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V 25 - - V Tj = 25 °C 1 1.5 2 V Tj = 150 °C 0.5 - - V Tj = 25 °C - 0.06 1 µA Tj = 150 °C - - 500 µA - 10 100 nA Tj = 25 °C - 7.4 9.5 mΩ Tj = 150 °C - 11.8 15.2 mΩ Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 1 mA; VDS = VGS; Figure 9 and 10 VDS = 25 V; VGS = 0 V IGSS gate-source leakage current VGS = ±16 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Figure 7 and 8 VGS = 10 V; ID = 25 A; Figure 7 and 8 RG(int) internal gate resistance Tj = 25 °C - 4.7 6.3 mΩ Tj = 150 °C - 7.5 10.1 mΩ f = 1 MHz - 1.8 - Ω ID = 25 A; VDS = 12 V; VGS = 4.5 V; Figure 11 and 12 - 13.3 - nC - 4.9 - nC Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgs1 pre-VGS(th) gate-source charge - 2.6 - nC Qgs2 post-VGS(th) gate-source charge - 2.3 - nC Qgd gate-drain (Miller) charge - 3.3 - nC Vplat plateau voltage - 2.4 - V Qg(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 4.5 V - 11.1 - nC Ciss input capacitance - 1871 - pF Coss output capacitance VGS = 0 V; VDS = 12 V; f = 1 MHz; Figure 13 and 14 - 517 - pF Crss reverse transfer capacitance - 179 - pF Ciss input capacitance VGS = 0 V; VDS = 0 V; f = 1 MHz - 2420 - pF td(on) turn-on delay time - 25 - ns tr rise time VDS = 12 V; ID = 25 A; VGS = 4.5 V; RG = 4.7 Ω - 25 - ns td(off) turn-off delay time - 32 - ns tf fall time - 12 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 - 0.85 1.2 V trr reverse recovery time - 33 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 25 V - 13 - nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 5 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 003aaa561 40 10 V ID 4.5 V 2.7 V 003aaa562 40 VGS = 2.6 V ID (A) (A) 2.5 V 30 30 2.4 V 2.3 V 20 Tj = 150 °C 20 2.2 V 25 °C 2.1 V 2V 10 10 1.8 V 1.6 V 0 0 0 0.5 1 1.5 2 VDS (V) 0 Tj = 25 °C 1 2 VGS (V) 3 Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. VGS = 2.4 V RDSon 03af18 2 003aaa563 20 2.5 V 2.6 V a (mΩ) 1.5 15 2.7 V 3V 10 1 4.5 V 10 V 5 0.5 0 0 0 10 20 30 ID (A) 40 Tj = 25 °C -60 60 120 Tj (°C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data 0 Rev. 01 — 28 April 2004 6 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 03aa33 2.5 VGS(th) (V) 2 1.5 03aa36 10-1 ID (A) max 10-2 typ 10-3 min max 10-4 min 1 typ 10-5 0.5 0 -60 10-6 0 60 120 Tj (°C) 180 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 003aaa566 10 003aaa508 VDS = 4.5 V VGS (V) 8 12 V VDS 19 V ID 6 Vplat VGS(th) 4 VGS Qgs1 2 Qgs2 Qgs Qgd Qg(tot) 0 0 10 20 QG (nC) 30 ID = 25 A; VDS = 4.5 V, 12 V and 19 V Fig 11. Gate-source voltage as a function of gate charge; typical values. Fig 12. Gate charge waveform definitions. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 7 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 003aaa564 104 003aaa633 4000 C (pF) C (pF) Ciss 3000 Ciss Crss 103 2000 Coss 1000 Crss 102 10-1 0 1 10 VDS (V) 102 0 2 4 6 8 10 VGS (V) Tj = 25 °C and 150 °C; VDS = 0 V VGS = 0 V; f = 1 MHz Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Fig 14. Input and reverse transfer capacitances as a function of gate-source voltage; typical values. 003aaa565 40 IS (A) 30 Tj = 150 °C 20 25 °C 10 0 0.2 0.4 0.6 0.8 1 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 8 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 7. Package outline Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 4 X e w M A b 1/2 c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max e H L L1 L2 w y θ 5.0 4.8 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° 0.25 0.30 4.10 4.20 0.19 0.24 3.80 3.3 3.1 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-09-15 MO-235 Fig 16. SOT669 (LFPAK). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 9 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 8. Soldering 5.70 4.70 solder lands 4.60 0.075 3.70 solder resist 2.50 occupied area 2.00 0.90 (3×) solder paste 0.25 (2×) 0.25 (2×) 2.00 2.05 3.45 3.50 3.68 3.30 3.48 2.50 0.60 (3×) 0.85 1.10 2.15 MSD864 1.27 3.81 0.70 (4×) 0.05 around (4×) Fig 17. SOT669 (LFPAK) optimized soldering footprint © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 10 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 9. Revision history Table 6: Revision history Rev Date 01 20040428 CPCN Description - Preliminary data (9397 750 12307) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Preliminary data Rev. 01 — 28 April 2004 11 of 13 PH6325L Philips Semiconductors N-channel TrenchMOS™ logic level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Preliminary data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12307 Rev. 01 — 28 April 2004 12 of 13 Philips Semiconductors PH6325L N-channel TrenchMOS™ logic level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 April 2004 Document order number: 9397 750 12307