polyfet rf devices F1116 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 40 Watts Push - Pull Package Style AQ TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 100 Watts 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 4 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Pow er Gain η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 40WATTS OUTPUT ) MAX 11 55 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz % Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX 65 UNITS TEST CONDITIONS Bvdss Drain Breakdow n Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forw ard Transconductance 1 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 1 Ohm Vgs = 20V, Ids = 4 A Idsat Saturation Current 6 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 40 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 5 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 30 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 1 V Ids = 0.05 A, Vgs = 0V 1 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.1 A, Vgs = Vds POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com F1116 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1116 POUT VS PIN F=400 F1J 1 DIE CAPACITANCE MHZ; IDQ=0.4A; VDS=28.0V 60 15.50 50 14.50 40 13.50 30 12.50 20 11.50 1000 100 Cis s Cos s Crs s 10 Efficiency = 50% 10 10.50 0 9.50 0 1 2 3 4 5 6 P IN IN WATT S 1 7 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1J 1 DIE IV CU RVE F1J 1 DIE GM & ID vs VGS 9 10 Id 8 7 6 1 5 4 Gm 3 0.1 2 1 0 0 2 4 6 8 10 12 14 16 18 20 0.01 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V S11 AND S22 SMITH CHART 2 Vg = 12V 4 6 8 10 12 14 16 18 20 Vgs in Volts PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com