GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X 0.040 (1.02) 45° CATHODE 1 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level 2001 Fairchild Semiconductor Corporation DS300313 6/05/01 1 OF 4 www.fairchildsemi.com GaAs INFRARED EMITTING DIODE LED55BF ABSOLUTE MAXIMUM RATINGS LED55CF LED56F (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3 Unit °C °C °C °C mA A V mW W NOTE: 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians. ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS IF = 100 mA "PE # VF IR PO PO PO tr tf — — — — 3.5 5.4 1.5 — — 940 ±40 — — — — — 1.0 1.0 — — 1.7 10 — — — — — nm Deg. V µA mW mW mW µs µs Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power LED55BF(7) Total Power LED55CF(7) Total Power LED56F(7) Rise Time 0-90% of output Fall Time 100-10% of output www.fairchildsemi.com IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA 2 OF 4 6/05/01 DS300313 GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F TYPICAL PERFORMANCE CURVES Figure 1. Power Output vs. Input Current 100 50 20 PULSED PW = 80 µsec FORWARD CURRENT PO, NORMALIZED POWER OUTPUT 10 5 2 CONTINUOUS FORWARD CURRENT 1.0 0.5 NORMALIZED TO I F = 100 mA TA = 25°C 0.2 0.1 0.05 0.02 0.01 .001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 5 10 IF, FORWARD CURRENT (A) Figure 3. Forward Voltage vs. Forward Current 10 8.0 6.0 Figure 2. Power Output vs. Temperature 1.4 4.0 2.0 IF, FORWARD CURRENT (A) PO, NORMALIZED POWER OUTPUT 1.2 1.0 0.8 0.6 0.4 NORMALIZED TO I F = 100 mA TA = 25°C 0.2 0.1 .08 .06 .04 0.2 0 1.0 0.8 0.6 0.4 .02 -50 -25 0 25 50 75 100 125 150 .01 TA, AMBIENT TEMPERATURE (°C) 0 1 3 2 4 5 6 7 8 9 10 VF, FORWARD VOLTAGE (V) Figure 5. Typical Radiation Pattern 100 40 80 RELATIVE OUTPUT (%) IF, FORWARD CURRENT (mA) Figure 4. Forward Voltage vs. Forward Current 100 80 60 20 TA = 100°C 25°C -55°C 10 8 6 4 .9 1.0 1.1 1.2 1.3 1.4 0 1.5 -80 6/05/01 -60 -40 -20 0 20 40 60 80 θ - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) VF, FORWARD VOLTAGE (V) DS300313 40 20 2 1 60 3 OF 4 www.fairchildsemi.com GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 6/05/01 DS300313