BetLux BL-LS0603SRC Smd led lamp Datasheet

SMD LED LAMP
BL-LS0603XX
Features:
1.6mmx0.8mm SMD, 0.8mm THICKNESS
Mono-color type
Compatible with automatic placement equipment
WIDE VIEWING ANGLE.
IDEAL FOR BACKLIGHT AND INDICATOR.
PACKAGE: 4KPCS/REEL
RoHs Compliance
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=20mA)
Chip
Part Number
Emitted Color
Red
GaP
700
BL-LS0603SRC
Super Red
AlGaAs
660
BL-LS0603LRC
Super Red
AlGaAs
660
.
w
w
BL-LS0603EC
BL-LS0603YC
BL-LS0603GC
m
o
c
.
x
u
l
t
e
b
BL-LS0603HC
BL-LS0603URC
Lens
Type
λP
(nm)
Material
Luminous
Intensity
(Iv)
Unit:mcd
Forward
Voltage(VF)
Unit:V
Water
Clear
Typ
Max
Min.
Typ.
2.2
2.7
0.3
1.0
1.85
2.30
5
13
1.85
2.30
10
28
1.95
2.50
20
45
Ultra Red
AlGaAs
660
Orange
GaAsP
640
2.10
2.70
1
6
Yellow
GaAsP
583
2.15
2.70
1
6
Green
GaP
568
2.30
2.70
6
15
w
Viewi
ng
Angle
2θ1/2
(deg)
130
Absolute maximum ratings (Ta=25°C)
Parameter
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
TSOL
H
SR
LR
UR
E
Y
G
Unit
mA
30
65
5
30
78
5
30
78
5
30
78
5
30
65
5
30
65
5
30
65
5
mW
100
100
100
100
100
100
100
mA
V
-30 to +80
-40 to +85
Max.260 5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP
BL-LS0603XX
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=20mA)
Chip
Part Number
Emitted Color
λP
(n
m)
Material
Forward
Voltage(VF)
Unit:V
Lens
Type
Luminous
Intensity
(Iv)
Unit:mcd
Max
Min.
Typ.
Ultra Red
AlGaAs
655
2.10
2.50
22
55
BL-LS0603UHR
Ultra Red
AlGaAs
645
2.10
2.60
30
80
BL-LS0603UEC
Ultra Orange
AlGaAs
630
2.10
2.50
30
80
BL-LS0603UHD
Ultra Orange
AlGaAs
618
2.10
2.60
50
110
BL-LS0603UYO
Ultra Amber
AlGaInP
610
2.10
2.60
30
80
BL-LS0603UYC
Ultra Yellow
AlGaInP
593
2.10
2.60
25
70
BL-LS0603UGC
Ultra Green
AlGaInP
575
2.20
2.70
10
40
BL-LS0603PGC
Ultra Pure Green
InGaN
525
3.50
4.20
50
100
BL-LS0603BGC
Ultra Bluish Green
InGaN
505
3.50
4.20
50
110
BL-LS0603DNB
Blue
InGaN
470
3.50
4.20
10
33
BL-LS0603UBC
Ultra Blue
InGaN
470
3.50
4.20
10
30
Ultra White
InGaN
/
3.50
4.20
40
200
.
w
w
BL-LS0603UWC
Angle
2θ1/2
(deg)
m
o
c
.
x
u
l
t
e
b
ng
Typ
BL-LS0603UDR
Water
Clear
Viewi
130
Absolute maximum ratings (Ta=25°C)
Parameter
w
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
TSOL
UDR
UHR
30
78
5
30
78
5
100
100
UY
UG
PG
BG
DNB
UB
UW
Unit
UHD
UYO
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
mW
100
100
100
100
100
100
100
100
100
100
mA
UE
mA
V
-30 to +80
-40 to +85
Max.260 5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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EMAIL: [email protected] , [email protected]
SMD LED LAMP
BL-LS0603XX
Package configuration & Internal circuit diagram
m
o
c
.
x
.
w
w
u
l
t
e
b
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP
BL-LS0603XX
Tape Specifications
Unit:mm
Tolerance:±0.1
! "#$
.
w
w
><=
w
&
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&
+*,
) (
% *
*
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. /0 1 2 34 567 58 9 :; 354 5;8
m
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c
.
x
u
l
t
e
b
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP
BL-LS0603XX
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
750
?
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
A
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
@
AMBIENT TEMPERATURE Ta( )
100
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
A free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000
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