BetLux BL-M15B881UEUG-XX Led dot matrix Datasheet

LED DOT MATRIX
BL-M15X881XX
Features:
Ø 38.00mm (1.5”) F 3.7 dot matrix LED display
Ø Low current operation.
Ø Excellent character appearance.
Ø Easy mounting on P.C. Boards or sockets.
Ø I.C. Compatible.
Ø ROHS Compliance.
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=20mA)
Part No
BL-M15A881EG-XX
BL-M15A881DUG-XX
BL-M15A881UEUG-X
X
Iv
λP
(nm)
Typ
Max
TYP.(mcd)
AlGaInP
660
2.10
2.50
250
Green
GaP/GaP
570
2.20
2.50
195
Orange
GaAsP/Ga
P
635
2.10
2.50
190
Green
GaP/GaP
570
2.20
2.50
195
Ultra Red
AlGaInP
660
2.10
2.50
320
Ultra Green
AlGaInP
574
2.20
2.50
250
BL-M15B881UEUG-X
Ultra Orange
AlGaInP
630
2.10
2.50
235
X
Ultra Green
AlGaInP
574
2.20
2.50
250
Row Cathode
Column Anode
BL-M15A881SG-XX
VF
Unit:V
Chip
Row Anode
Column Cathode
BL-M15B881SG-XX
Emitted Color
Super Red
BL-M15B881EG-XX
BL-M15B881DUG-XX
Material
n
-XX: Surface / Lens color:
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
n
1
2
3
4
5
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
Absolute maximum ratings (Ta=25°C)
S
G
E
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
30
75
5
30
80
5
30
80
5
30
75
5
30
75
5
30
65
5
mW
150
150
150
150
150
150
mA
Lead Soldering Temperature
TSOL
D
UG
UE
U
nit
Parameter
-40 to +80
-40 to +85
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.3
Page 1 of 3
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EMAIL: [email protected] , [email protected]
mA
V
°C
°C
°
C
LED DOT MATRIX
BL-M15X881XX
n
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.3
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EMAIL: [email protected] , [email protected]
LED DOT MATRIX
BL-M15X881XX
n
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(? p )
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
4.0
3.0
2.0
1.0
0
3.0
60
80
-10
0
10
20
30
40
50
60
4
3
10
20
40
60
80
100
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEMPERATURE Ta(℃)
3
5
AMBIENT TEMPERATURE Ta(℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
2
-20
20
6
2,4,8,A
Ipeak MAX.
IDC MAX.
0.2
30
1
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
10
9
8
7
6
5
0.5
40
0
100
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
1
5
4
2
3
0.1
-30
40
20
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
5
B
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
3
2
50
1
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
NOTE:25℃ free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.3
Page 3 of 3
WWW.BETLUX.COM
EMAIL: [email protected] , [email protected]
10,000
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