BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2110 to 2170 1300 28 43 18.0 30 32[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-160 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G22LS-160 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-160 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G22LS-160 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 36 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. BLF7G22L-160_7G22LS-160 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 55 W 0.29 K/W All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage Min Typ Max Unit VGS = 0 V; ID = 2.16 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 34 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 10.8 A - 20 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.56 A - 0.06 - 7. Test information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 43 W 16.5 18.0 - dB RLin input return loss PL(AV) = 43 W - 15 6.5 dB D drain efficiency PL(AV) = 43 W 27 30 - % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 43 W - 32 28 dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO Conditions output peak-to-average ratio PL(AV) = 100 W; at 0.01 % probability on CCDF Min Typ Max Unit 3.9 4.15 - dB 7.1 Ruggedness in class-AB operation The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1300 mA; PL = 160 W; f = 2110 MHz. BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.2 2-Carrier W-CDMA 5 MHz 001aan987 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 ηD 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 1. Power gain and drain efficiency as function of load power; typical values 001aan988 -10 001aan989 -20 ACPR5M (dBc) ACPR10M (dBc) -20 -30 -30 -40 (1) -40 (1) -50 f - 10 MHz (2) f - 5 MHz (2) -50 f + 10 MHz -60 f + 5 MHz -60 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Adjacent channel power ratio (5 MHz) as a function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz Fig 2. 38 Fig 3. Adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aan990 40 001aan991 9 RLin (dB) PAR (dB) 30 (1) 6 (1) (2) 20 3 (2) 10 0 28 33 38 43 0 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 4. 43 Input return loss as function of load power; typical values Fig 5. Peak-to-average power ration as function of load power; typical values 7.3 2-Carrier W-CDMA 10 MHz 001aan992 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 ηD 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 6. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aan993 -10 001aan994 -10 ACPR5M (dBc) ACPR10M (dBc) -30 -30 (1) (1) f - 10 MHz (2) f - 5 MHz -50 f + 10 MHz f + 5 MHz -70 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 7. (2) -50 Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 8. Adjacent channel power ratio (10 MHz) as a function of load power; typical values 7.4 1-Carrier W-CDMA 001aan995 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 ηD 14 12 28 33 10 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 9. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aan996 -20 001aan997 -40 ACPR5M (dBc) ACPR10M (dBc) -30 -50 -40 (1) -50 f - 5 MHz f - 10 MHz -60 (2) (1) f + 5 MHz -60 (2) f + 10 MHz -70 28 33 38 43 -70 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2170 MHz (2) f = 2170 MHz Fig 10. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 11. Adjacent channel power ratio (10 MHz) as a function of load power; typical values 001aan998 8 PAR (dB) (1) 6 (2) 4 2 0 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 12. Peak-to-average power ration as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.5 IS-95 001aan999 22 50 Gp (dB) ηD (%) 20 40 Gp 18 30 (2) (1) 16 20 14 10 ηD 12 28 33 38 43 48 53 PL (dBm) 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 13. Power gain and drain efficiency as function of load power; typical values 001aao000 -20 ACPR885k (dBc) 001aao001 -50 ACPR1980k (dBc) -30 -60 -40 (1) -70 (2) -50 (3) (4) (1) -60 -80 (2) (3) (4) -70 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. -90 28 33 38 (1) f = 2110 MHz; f + 1980 kHz (2) f = 2170 MHz; f + 885 kHz (2) f = 2170 MHz; f + 1980 kHz (3) f = 2110 MHz; f 885 kHz (3) f = 2110 MHz; f 1980 kHz (4) f = 2170 MHz; f 885 kHz (4) f = 2170 MHz; f 1980 kHz Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Product data sheet 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz; f + 885 kHz BLF7G22L-160_7G22LS-160 43 Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 001aao002 12 PAR (dB) 8 (1) (2) 4 0 28 33 38 43 48 53 PL (dBm) VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 16. Peak-to-average power ration as function of load power; typical values 7.6 CW 001aao003 22 60 Gp (dB) ηD (%) (2) 20 48 (1) Gp 18 36 16 24 ηD 14 12 12 38 44 50 PL (dBm) 56 0 VDS = 28 V; IDq = 1300 mA. (1) f = 2110 MHz (2) f = 2170 MHz Fig 17. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.7 CW-pulsed 001aao004 22 Gp (dB) 60 ηD (%) (2) 20 48 (1) Gp 18 36 16 24 ηD 14 12 12 38 44 50 PL (dBm) 56 0 VDS = 28 V; IDq = 1300 mA; tp = 0.10 ms; = 10 %. (1) f = 2110 MHz (2) f = 2170 MHz Fig 18. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 7.8 Test circuit 50.0 mm 50.0 mm C9 C11 C1 C3 R1 C13 C15 C6 C5 60.0 mm C8 NXP BLF7G22L(S)-160 Input Rev 01 60.0 mm NXP BLF7G22L-160 Output Rev 01 001aao005 Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 19. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 19. Component BLF7G22L-160_7G22LS-160 Product data sheet Description Value Remarks C1, C5, C8, C9 multilayer ceramic chip capacitor 68 pF [1] C3, C11 multilayer ceramic chip capacitor 820 pF [2] C6, C13 multilayer ceramic chip capacitor 10 F [3] C15 electrolytic capacitor 470 F; 63 V R1 SMD resistor 12 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 Philips 1206 © NXP B.V. 2011. All rights reserved. 11 of 18 NXP Semiconductors BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 7.9 Impedance information Table 10. Typical impedance Typical values unless otherwise specified. f ZS ZL MHz 2050 1.39 j4.13 1.41 j3.80 2080 1.67 j3.93 1.38 j3.63 2110 2.01 j3.89 1.35j3.45 2140 2.28j4.09 1.33 j3.28 2170 2.27 j4.47 1.31 j3.12 2200 1.92j4.76 1.28 j2.95 2230 1.42 j4.75 1.26 j2.79 drain ZL gate ZS 001aaf059 Fig 20. Definition of transistor impedance BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 12 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 21. Package outline SOT502A BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 13 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 22. Package outline SOT502B BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 14 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 11. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 12. Revision history Document ID Release date BLF7G22L-160_7G22LS-160 v.2.1 20111102 Modifications: BLF7G22L-160_7G22LS-160 v.2 Modifications: BLF7G22L-160_7G22LS-160 v.1 BLF7G22L-160_7G22LS-160 Product data sheet • Change notice Supersedes Product data sheet - BLF7G22L-160_7G22LS-160 v.2 Table 3: amended package descriptions 20111020 • • Data sheet status Product data sheet - BLF7G22L-160_7G22LS-160 v.1 The status of this document has been changed to Product data sheet Table 7 on page 3: the minimum value for D has been changed 20110427 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 - © NXP B.V. 2011. All rights reserved. 15 of 18 BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 16 of 18 NXP Semiconductors BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF7G22L-160_7G22LS-160 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 2 November 2011 © NXP B.V. 2011. All rights reserved. 17 of 18 NXP Semiconductors BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 2-Carrier W-CDMA 5 MHz . . . . . . . . . . . . . . . . 4 2-Carrier W-CDMA 10 MHz . . . . . . . . . . . . . . . 5 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 CW-pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Impedance information . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 November 2011 Document identifier: BLF7G22L-160_7G22LS-160