DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA equipments such as VCRs and TVs. PACKAGE DRAWING (UNIT: mm) FEATURES • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. BP1 SERIES LISTS Products R1 (KΩ) R2 (KΩ) BP1A4A − 10 BP1L2Q 0.47 4.7 BP1A3M 1.0 1.0 BP1F3P 2.2 10 BP1J3P 3.3 10 BP1L3N 4.7 10 BP1A4M 10 10 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11740EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 BP1 SERIES ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Symbol Ratings Unit Collector to base volgate Parameter VCBO −25 V Colletor to emitter voltage VCEO −25 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −0.7 A Collector current (Pulse) Base current (DC) Total power dissipation −1.0 A IB(DC) −0.02 A PT 250 mW Note 1 IC(pulse) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note 1 PW ≤ 10 ms, duty cycle ≤ 50 % BP1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −22 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1Note 2 VCE = −2.0 V, IC = −0.1 A 200 − DC current gain Note 2 hFE2 VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3Note 2 VCE = −2.0 V, IC = −0.7 A 50 − Collector saturation voltage Note 2 VCE(sat) IC = −0.3 A, IB = −6 mA −0.28 VCE = −5.0 V, IC = −100 µA −0.4 V −0.3 V Input resistance R1 − − − Ω E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA Low level input voltage Note 2 VIL Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 DC current gain Note 2 hFE1 VCE = −2.0 V, IC = −0.1 A 150 350 − DC current gain hFE2Note 2 VCE = −2.0 V, IC = −0.5 A 100 300 − DC current gain Note 2 VCE = −2.0 V, IC = −0.7 A 50 200 − Note 2 hFE3 Low level output voltage VOL VIN = −5.0 V, IC = −0.3 A Low level input voltage VILNote 2 VCE = −5.0 V, IC = −100 µA Input resistance E-to-B resistance R1 329 R2 3.29 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % 2 −0.30 Data Sheet D11740EJ2V0DS 470 4.7 −0.4 V −0.3 V 611 Ω 6.11 kΩ BP1 SERIES BP1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −22 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1Note 2 VCE = −2.0 V, IC = −0.1 A 80 − DC current gain Note 2 VCE = −2.0 V, IC = −0.5 A 100 − Note 2 50 hFE2 DC current gain hFE3 VCE = −2.0 V, IC = −0.7 A Low level output voltage VOLNote 2 VIN = −5.0 V, IC = −0.2 A Low level input voltage VILNote 2 VCE = −5.0 V, IC = −100 µA − −0.3 −0.4 V −0.3 V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit −100 nA Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 Note 2 VCE = −2.0 V, IC = −0.1 A 200 − DC current gain Note 2 hFE2 VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3Note 2 VCE = −2.0 V, IC = −0.7 A 50 − DC current gain Low level output voltage Low level input voltage hFE1 Note 2 VOL Note 2 VIL VIN = −5.0 V, IC = −0.2 A −0.4 VCE = −5.0 V, IC = −100 µA −0.3 V V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1J3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 DC current gain Note 2 hFE1 VCE = −2.0 V, IC = −0.1 A 200 470 − DC current gain hFE2Note 2 VCE = −2.0 V, IC = −0.5 A 100 300 − DC current gain Note 2 VCE = −2.0 V, IC = −0.7 A 50 Note 2 hFE3 Low level output voltage VOL VIN = −5.0 V, IC = −0.2 A Low level input voltage VILNote 2 VCE = −5.0 V, IC = −100 µA − 200 −0.28 −0.4 V −0.3 V Input resistance R1 2.3 3.3 4.3 kΩ E-to-B resistance R2 7 10 13 kΩ Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D11740EJ2V0DS 3 BP1 SERIES BP1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −22 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1Note 2 VCE = −2.0 V, IC = −0.1 A 200 − DC current gain Note 2 VCE = −2.0 V, IC = −0.5 A 100 − Note 2 50 hFE2 DC current gain hFE3 VCE = −2.0 V, IC = −0.7 A Low level output voltage VOLNote 2 VIN = −5.0 V, IC = −0.2 A −0.45 Low level input voltage VILNote 2 VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 Note 2 VCE = −2.0 V, IC = −0.1 A 200 − DC current gain Note 2 hFE2 VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3Note 2 VCE = −2.0 V, IC = −0.7 A 50 − DC current gain Low level output voltage Low level input voltage hFE1 Note 2 VOL Note 2 VIL VIN = −5.0 V, IC = −0.1 A −0.4 VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ Note 2 PW≤350 µs, duty cycle≤2 % 4 V Data Sheet D11740EJ2V0DS BP1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D11740EJ2V0DS 5 BP1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4