EIC BR5006 Silicon bridge rectifier Datasheet

ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
BR5000 - BR5010
SILICON BRIDGE RECTIFIERS
BR50
PRV : 50 - 1000 Volts
Io : 50 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
High efficiency
Low reverse current
Low forward voltage drop
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
1.130(28.70)
1.120(28.40)
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
BR5000
BR5001
BR5002
BR5004
BR5006
BR5008
BR5010
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55°C
IF(AV)
50
Amps.
IFSM
500
Amps.
Current Squared Time at t < 8.3 ms.
2
It
660
A2S
Maximum Forward Voltage per Diode at IF=25 Amp.
VF
1.1
Volts
IR
10
µA
IR(H)
200
µA
RθJC
1.0
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
UPDATE : JUNE 2, 1999
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES (BR5000 - BR5010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
5
0
50
5
0
HEAT-SINK MOUNTING, Tc
9" x 5" x 4.6" THK.
5
5
(22.9 x 12.7 x 11.7cm)
0
0
Al.-Finned .
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
60
5
0
40
30
20
10
0
0
25
50
75
100
125
150
600
500
T J = 50 °C
400
300
200
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
100
0
175
1
2
4
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
20
40
60
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
100
T J = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
6
NUMBER OF CYCLES AT 60Hz
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.0
T J = 25 °C
0.1
T J = 25 °C
0.1
0.01
0
20
40
60
80
100
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE, VOLTS
1.4
1.6
1.8
120
140
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