N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. Part Package 2N7000 BS170L X2N7000 Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC -55oC to +150oC PIN CONFIGURATION 2N7000 3 3 1 SOURCE 2 GATE 3 DRAIN 2 1 TO-92 (TO-226AA) 2 BOTTOM VIEW 1 BS170L 1 3 1 DRAIN 2 GATE 3 SOURCE 2 3 1 2 1 2 BOTTOM VIEW CD5 PRODUCT SUMMARY V(BR)DSS (V) rDS(ON) (Ω) ID (A) 2N7000 60 5 0.2 BS170 60 5 0.5 P/N 3 2N7000 / BS170L CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL PARAMETERS LIMITS VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±40 ID Continuous Drain Current UNITS V TA = 25oC 0.2 A 0.13 1 TEST CONDITIONS IDM Pulsed Drain Current PD Power Dissipation1 TJ Operating Junction Temperature Range -55 to 150 Tstg Storage Temperature Range -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) TA = 100 oC 0.5 0.4 W 0.16 o TA = 25oC TA = 100 oC C 300 THERMAL RESISTANCE RATINGS NOTE: SYMBOL THERMAL RESISTANCE LIMITS UNITS RthJA Junction-to-Ambient 312.5 K/W 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS1 SYMBOL PARAMETER MIN TYP2 MAX UNIT TEST CONDITIONS STATIC V(BR)DSS Drain-Source Breakdown Voltage 60 70 VGS(th) Gate-Threshold Voltage 0.8 1.9 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current ±10 1 1000 3 On-State Drain Current ID(ON) rDS(ON) 75 Drain-Source On-Resistance 3 3 VDS(ON) Drain-Source On-Voltage gFS Forward Transconductance 3 Common Source Output Conductance gOS 3 100 3, 4 210 V nA µA mA 4.8 5.3 2.5 5 4.4 9 0.36 0.4 1.25 2.5 2.2 4.5 ID = 10µA, VGS = 0V VDS = VGS, I D = 1mA VGS = ±15V, VDS = 0V VDS = 48V, VGS = 0V TC = 125oC VDS = 10V, VGS = 4.5V 4 Ω VGS = 4.5V, ID = 75mA VGS = 10V, ID = 0.5A TC = 125oC 4 V VGS = 4.5V, ID = 75mA VGS = 10V, ID = 0.5A TC = 125oC4 170 mS VDS = 10V, ID = 0.2A 500 µS VDS = 5V, ID = 50mA pF VDS = 25V, VGS = 0V, f = 1MHz nS VDD = 15V, RL = 25Ω, ID = 0.5A VGEN = 10V, RG = 25Ω (Switching time is essentially independent of operating temperature) DYNAMIC Input Capacitance Ciss 4 16 60 Coss Output Capacitance 11 25 Crss Reverse Transfer Capacitance 2 5 Turn-On Time 7 10 SWITCHING t ON t OFF NOTES: 1. 2. 3. 4. Turn-Off Time TA = 25oC unless otherwise specified. For design aid only, not subject to production testing. Pulse test; PW = ≤300µS, duty cycle ≤3%. This parameter not registered with JEDEC. 7 10