BSI BS616LV8010FCP55 Very low power/voltage cmos sram 512k x 16 bit Datasheet

BSI
Very Low Power/Voltage CMOS SRAM
512K X 16 bit
(Single CE Pin)
„ FEATURES
BS616LV8010
„ DESCRIPTION
• Vcc operation voltage : 2.7~3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV8010 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.5uA at 3V/25oC and maximum access time of 55ns at 3V/85oC.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV8010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8010 is available in 48B BGA and 44L TSOP2 packages.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS616LV8010EC
BS616LV8010FC
BS616LV8010EI
BS616LV8010FI
O
O
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE
A18
A17
A16
A15
A14
A
POWER DISSIPATION
STANDBY
Operating
SPEED
( ns )
( I CCSB1, Max )
55ns : 3.0~3.6V
70ns : 2.7~3.6V
PKG TYPE
( ICC , Max )
Vcc=3V
Vcc=3V
Vcc=3V
55ns
70ns
+0 C to +70 C
2.7V ~ 3.6V
55 / 70
5uA
30mA
24mA
-40 O C to +85O C
2.7V ~ 3.6V
55 / 70
10uA
31mA
25mA
„ PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Vcc
RANGE
BS616LV8010EC
BS616LV8010EI
TSOP2-44
BGA-48-0912
TSOP2-44
BGA-48-0912
„ BLOCK DIAGRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
1
2
3
4
5
6
LB
OE
A0
A1
A2
NC
A4
A3
A2
A1
Address
A0
A17
A16
A15
A14
A13
A12
Input
Buffer
22
2048
Row
Memory Array
Decoder
2048 x 4096
4096
16
D0
.
.
.
.
.
.
.
.
D8
UB
A3
A4
CE
D0
C
D9
D10
A5
A6
D1
D2
D
V SS
D11
A17
A7
D3
V CC
WE
E
V CC
D12
VSS
A16
D4
V SS
OE
UB
F
D14
D13
A 14
A 15
D5
D6
LB
G
D15
NC
.
A12
A 13
WE
D7
H
A 18
A8
A9
A 10
A 11
NC
Vcc
Vss
16
Column I/O
Write Driver
Sense Amp
16
Data
Output
Buffer
D15
B
Data
Input
Buffer
256
16
Column Decoder
16
CE
Control
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5 A18
48-Ball CSP top View
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV8010
1
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ PIN DESCRIPTIONS
Name
Function
A0-A18 Address Input
These 19 address inputs select one of the 524,288 x 16-bit words in the RAM.
CE Chip Enable Input
CE is active LOW. Chip enables must be active when data read from or write to the
device. if chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
D0 - D15 Data Input/Output Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Vss
Ground
„ TRUTH TABLE
MODE
Not selected
(Power Down)
Output Disabled
Read
Write
CE
H
WE
OE
LB
UB
D0~D7
D8~D15
X
X
X
X
High Z
High Z
ICCSB , I CCSB1
X
X
X
H
H
High Z
L
L
X
H
X
H
H
X
H
X
High Z
High Z
High Z
High Z
ICCSB , I CCSB1
ICC
L
L
Dout
H
L
L
H
L
L
L
L
„ ABSOLUTE MAXIMUM
SYMBOL
H
L
L
X
with
High Z
ICC
Dout
ICC
High Z
Dout
ICC
Dout
High Z
ICC
Din
Din
ICC
H
L
X
Din
ICC
L
H
Din
X
ICC
RATINGS(1)
PARAMETER
Vcc CURRENT
RATING
UNITS
-0.5 to
Vcc+0.5
V
VTERM
Terminal Voltage
Respect to GND
TBIAS
Temperature Under Bias
-40 to +85
O
TSTG
Storage Temperature
-60 to +150
O
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
„ OPERATING RANGE
AMBIENT
RANGE
TEMPERATURE
Commercial
C
Industrial
C
0 O C to +70O C
O
O
-40 C to +85 C
Vcc
2.7V ~ 3.6V
2.7V ~ 3.6V
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Input
CIN
VIN=0V
10
pF
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
Capacitance
RATINGS may cause permanent damage to the device. This is a
Input/Output
CDQ
VI/O=0V
12
pF
stress rating only and functional operation of the device at these
Capacitance
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
1. This parameter is guaranteed and not 100% tested.
maximum rating conditions for extended periods may affect reliability.
R0201-BS616LV8010
2
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
Voltage (3)
Guaranteed Input High
Voltage(3)
VIL
VIH
(1)
MIN. TYP.
MAX.
UNITS
Vcc=3.0V
-0.5
--
0.8
V
Vcc=3.0V
2.0
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE = VIH , or OE = VIH ,
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3.0V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3.0V
2.4
--
--
V
--
--
31
--
--
25
ICC
(4)
Operating Power Supply
Current
ICCSB
(5)
ICCSB1
CE = VIL ,IDQ = 0mA
,F = Fmax(2)
55ns
Vcc=3.0V
70ns
mA
Standby Current - TTL
CE = VIH ,I DQ = 0mA
Vcc=3.0V
--
--
1
mA
Standby Current - CMOS
CE ≧ Vcc -0.2V,
VIN ≧ Vcc - 0.2V or VIN≦ 0.2V
Vcc=3.0V
--
1.5
10
uA
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 30mA(@55ns) / 24mA(@70ns) during 0~70oC operation.
5.IccsB1 is 5uA at Vcc=3.0V and TA=70oC.
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
VDR
ICCDR
tCDR
tR
(3)
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
Vcc for Data Retention
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.8
2.5
uA
--
--
ns
--
--
ns
Chip Deselect to Data
Retention Time
See Retention Waveform
Operation Recovery Time
0
TRC
(2)
2. tRC = Read Cycle Time
1. Vcc = 1.5V, TA = + 25OC
3. IccDR(Max.) is 1.3uA at TA=70OC.
„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
CE
R0201-BS616LV8010
VIH
Vcc
tR
t CDR
CE ≥ Vcc - 0.2V
3
VIH
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ KEY TO SWITCHING WAVEFORMS
„ AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
WAVEFORM
INPUTS
OUTPUTS
1V/ns
MUST BE
STEADY
MUST BE
STEADY
Input and Output
Timing Reference Level
0.5Vcc
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
READ CYCLE
JEDEC
PARAMETER
PARAMETER
NAME
NAME
Vcc = 2.7~3.6V
Vcc = 3.0~3.6V
UNIT
MIN. TYP. MAX.
MIN. TYP. MAX.
Read Cycle Time
70
--
--
55
--
--
ns
Address Access Time
--
--
70
--
--
55
ns
(CE)
--
--
70
--
--
55
ns
(LB,UB)
--
--
35
--
--
30
ns
--
--
35
--
--
30
ns
tAVAX
tAVQV
tELQV
tRC
tAA
t ACS
tBA
tBA
tGLQV
tELQX
tBE
tGLQX
tOE
tCLZ
tBE
tOLZ
Output Enable to Output Valid
tEHQZ
tBDO
tCHZ
tBDO
Chip Deselect to Output in High Z
tGHQZ
tOHZ
tAXOX
tOH
Chip Select Access Time
(1)
CYCLE TIME : 70ns CYCLE TIME : 55ns
DESCRIPTION
Data Byte Control Access Time
(CE)
10
--
--
10
--
--
ns
(LB,UB)
5
--
--
5
--
--
ns
5
--
--
5
--
--
ns
(CE)
--
--
35
--
--
30
ns
Data Byte Control to Output High Z (LB,UB)
--
--
35
--
--
30
ns
Output Disable to Output in High Z
--
--
30
--
--
25
ns
Data Hold from Address Change
10
--
--
10
--
--
ns
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output in Low Z
NOTE :
1. tBA is 35ns/30ns (@speed=70ns/55ns) with address toggle .
tBA is 70ns/55ns (@speed=70ns/55ns) without address toggle .
R0201-BS616LV8010
4
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2 (1,3,4)
CE
t ACS
t BA
LB,UB
t BE
D OUT
t
t
t BDO
(5)
(5)
CHZ
CLZ
READ CYCLE3 (1,4)
t RC
ADDRESS
t
AA
OE
t
t
CE
t
t
t
OE
OH
OLZ
t
ACS
(5)
CLZ
OHZ
(5)
(1,5)
t
CHZ
t
BDO
LB,UB
t
BE
t
BA
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL .
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV8010
5
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40 to +
WRITE CYCLE
JEDEC
PARAMETER
PARAMETER
NAME
NAME
t AVAX
t E1LWH
t AVWL
t AVWH
t WLWH
t WHAX
t BW
t WLQZ
t DVWH
t WHDX
t GHQZ
t WC
t CW
t AS
t AW
t WP
t WR
t BW (1)
t WHZ
t DW
t DH
t OHZ
t WHOX
t OW
85oC
)
CYCLE TIME : 70ns CYCLE TIME : 55ns
DESCRIPTION
Vcc = 2.7~3.6V
Vcc = 3.0~3.6V
MIN. TYP. MAX.
MIN. TYP. MAX.
UNIT
Write Cycle Time
70
--
--
55
--
--
ns
Chip Select to End of Write
55
--
--
ns
70
--
--
Address Setup Time
0
--
--
0
--
--
ns
Address Valid to End of Write
70
--
--
55
--
--
ns
Write Pulse Width
35
--
--
30
--
--
ns
0
--
--
0
--
--
ns
Date Byte Control to End of Write (LB,UB)
(CE,WE)
30
--
--
25
--
--
ns
Write to Output in High Z
--
--
30
--
--
25
ns
Data to Write Time Overlap
30
--
--
25
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
--
--
30
--
--
25
ns
End of Write to Output Active
5
--
--
5
--
--
ns
Write recovery Time
NOTE :
1. tBW is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; tBW is 70ns/55ns (@speed=70ns/55ns) without address toggle.
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
WC
ADDRESS
(3)
t WR
OE
(11)
t CW
(5)
CE
t
BW
(5)
LB,UB
t AW
WE
(3)
t WP
t AS
(2)
(4,10)
t OHZ
D OUT
t DH
t DW
D IN
R0201-BS616LV8010
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Revision 1.1
Jan.
2004
BSI
BS616LV8010
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t
(5)
CE
t
BW
(5)
LB,UB
t
WE
CW
AW
t WR
t WP
(3)
(2)
t AS
(4,10)
t WHZ
D OUT
t
OW
t
DH
(7)
(8)
t DW
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE going low to the end of write.
R0201-BS616LV8010
7
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ ORDERING INFORMATION
BS616LV8010 X X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
F :BGA-48-0912
E :TSOP2-44
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
1.4 Max.
0.25± 0.05
„ PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
SIDE VIEW
D 0.1
3.375
D1
N
D
E
D1
E1
e
48
12.0
9.0
5.25
3.75
0.75
E1
2.625
E ± 0.1
e
SOLDER BALL 0.35±0.05
VIEW A
48 mini-BGA (9mm x 12mm)
R0201-BS616LV8010
8
Revision 1.1
Jan.
2004
BSI
BS616LV8010
„ PACKAGE DIMENSIONS (continued)
TSOP2-44
R0201-BS616LV8010
9
Revision 1.1
Jan.
2004
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