Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V (Vcc_min.=1.65V at 25oC) • Ultra low power consumption : Vcc = 2.0V C-grade : 8mA (Max.) operating current I- grade : 10mA (Max.) operating current 0.20uA (Typ.) CMOS standby current Vcc = 3.0V C-grade : 11mA (Max.) operating current I- grade : 13mA (Max.) operating current 0.30uA (Typ.) CMOS standby current • High speed access time : -85 85ns (Max.) -10 100ns (Max.) • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation BS62UV2006 • Data retention supply voltage as low as 1.0V • Easy expansion with CE2, CE1, and OE options DESCRIPTION The BS62UV2006 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.2uA at 2.0V /25oC and maximum access time of 85ns at 85oC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62UV2006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV2006 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP. PRODUCT FAMILY PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE POWER DISSIPATION STANDBY Operating SPEED ( ns ) ( ICCSB1, Max ) C-grade:1.8~3.6V I-grade:1.9~3.6V BS62UV2006DC BS62UV2006TC BS62UV2006STC BS62UV2006SC BS62UV2006DI BS62UV2006TI BS62UV2006STI BS62UV2006SI Vcc=2.0V 85/100 3.0uA 2.0uA 11mA 8mA -40 O C to +85 O C 1.9V ~ 3.6V 85/100 5.0uA 3.0uA 13mA 10mA BS62UV2006TC BS62UV2006STC BS62UV2006TI BS62UV2006STI 1 2 3 4 5 6 7 BS62UV2006SC 8 BS62UV2006SI 9 10 11 12 13 14 15 16 • A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND Vcc=3.0V 1.8V ~3.6V • 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc=2.0V +0 O C to +70 O C 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 DICE TSOP-32 STSOP-32 SOP-32 DICE TSOP-32 STSOP-32 SOP-32 BLOCK DIAGRAM PIN CONFIGURATIONS A11 A9 A8 A13 WE CE2 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 PKG TYPE ( ICC, Max ) Vcc=3.0V 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 A13 A17 A15 A16 A14 A12 A7 A6 A5 A4 Address Input Buffer 20 Row 1024 Memory Array 1024 x 2048 Decoder 2048 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 CE1 CE2 WE OE Vdd Gnd 8 8 Data Input Buffer Data Output Buffer Column I/O 8 8 Write Driver Sense Amp 256 Column Decoder 16 Control Address Input Buffer A11 A9 A8 A3 A2 A1 A0 A10 Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. R0201-BS62UV2006 1 Revision 1.1 Jan. 2004 BSI BS62UV2006 PIN DESCRIPTIONS Name Function A0-A17 Address Input These 18 address inputs select one of the 262,144 x 8-bit words in the RAM CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. DQ0-DQ7 Data Input/Output Ports These 8 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground TRUTH TABLE MODE WE CE1 CE2 OE Not selected (Power Down) X H X X X X L X Output Disabled H L H Read H L H Write L L H PARAMETER I CCSB, I CCSB1 H High Z I CC L D OUT I CC X D IN I CC OPERATING RANGE RATING UNITS -0.5 to Vcc+0.5 V V TERM Terminal Voltage with Respect to GND TBIAS Temperature Under Bias -40 to +85 O TSTG Storage Temperature -60 to +150 O PT Power Dissipation 1.0 W I OUT DC Output Current 20 mA C RANGE AMBIENT TEMPERATURE Commercial 0 O C to +70 O C Industrial -40 C to +85 C O O Vcc 1.8V ~ 3.6V 1.9V ~ 3.6V C CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. R0201-BS62UV2006 Vcc CURRENT High Z ABSOLUTE MAXIMUM RATINGS(1) SYMBOL I/O OPERATION 2 CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V 6 pF VI/O=0V 8 pF 1. This parameter is guaranteed and not 100% tested. Revision 1.1 Jan. 2004 BSI BS62UV2006 DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC ) PARAMETER NAME V IL V IH IIL ILO V OL VOH ICC ICCSB ICCSB1(4) PARAMETER TEST CONDITIONS Guaranteed Input Low (2) Voltage Guaranteed Input High (2) Voltage MIN. Vcc=2.0V Vcc=2.0V Vcc=3.0V Input Leakage Current Vcc = Max, VIN = 0V to Vcc Output Leakage Current Vcc = Max, CE1 = V IH or CE2=VIL or OE = V IH, VI/O = 0V to Vcc Vcc Vcc Vcc Vcc 1.4 2.0 --- -- 1 ------ 0.2 0.4 --10 (5) V Vcc+0.3 V 1 uA uA Vcc=2.0V Operating Power Supply Current Vcc = Max, CE1= V IL, CE2=V IH (3) IDQ = 0mA, F = Fmax Vcc=2.0V --V cc-0.2 2.4 -- Vcc=3.0V -- -- 13 Standby Current-TTL Vcc = Max, CE1 = V IH or CE2=V IL IDQ = 0mA Vcc=2.0V -- -- 0.1 Vcc=3.0V -- -- 0.5 Vcc=2.0V -- 0.20 3.0 Vcc=3.0V -- 0.30 5.0 Output High Voltage Standby Current-CMOS Vcc = Max, CE1≧Vcc-0.2V or CE2≦0.2V ;V IN≧ Vcc - 0.2V or V IN≦0.2V Vcc=3.0V Vcc=2.0V Vcc=3.0V UNITS 0.6 0.8 Max, IOL = 0.1mA Max, IOL = 2.0mA Min, IOH = -0.1mA Min, IOH = -1.0mA Output Low Voltage = = = = MAX. ------ -0.3 Vcc=3.0V TYP. (1) V V mA mA uA 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . 4. IccsB1 is 2.0uA/3.0uA at Vcc=2.0V/3.0V and TA=70oC. 5. VIL = -1.5V for pulse width less than 30ns. DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC ) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V, VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.0 -- -- V ICCDR(3) Data Retention Current CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V, VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 0.1 1.0 uA tCDR Chip Deselect to Data Retention Time -- -- ns -- -- ns tR See Retention Waveform Operation Recovery Time 0 TRC (2) 1. Vcc = 1.0V, TA = + 25OC 2. tRC = Read Cycle Time 3. IccDR is 0.7uA at TA=70oC. LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled ) Data Retention Mode Vcc VDR ≥ 1.0V Vcc CE1 Vcc tR t CDR CE1 ≥ Vcc - 0.2V VIH LOW VCC DATA RETENTION WAVEFORM (2) VIH ( CE2 Controlled ) Data Retention Mode Vcc VDR ≧ 1.0V Vcc CE2 R0201-BS62UV2006 VIL Vcc tR t CDR CE2 ≦ 0.2V 3 VIL Revision 1.1 Jan. 2004 BSI BS62UV2006 KEY TO SWITCHING WAVEFORMS AC TEST CONDITIONS (Test Load and Input/Output Reference) WAVEFORM Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output Timing Reference Level 0.5Vcc Output Load CL = 100pF+1TTL CL = 30pF+1TTL INPUTS OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H , DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC) READ CYCLE JEDEC PARAMETER NAME PARAMETER NAME tAVAX tRC Read Cycle Time tAVQV tAA Address Access Time tE1LQV tACS1 Chip Select Access Time (CE1) tE2HOV tACS2 Chip Select Access Time tGLQV tOE Output Enable to Output Valid t E1LQX tCLZ1 tE2HOX DESCRIPTION CYCLE TIME : 100ns CYCLE TIME : 85ns MIN. TYP. MAX. MIN. TYP. MAX. (Vcc = 1.9~3.6V) (Vcc = 1.9~3.6V) 100 -- -- 85 -- -- -- 100 -- -- 85 ns -- -- 100 -- -- 85 ns (CE2) -- -- 100 -- -- 85 ns -- -- 45 -- -- 40 ns Chip Select to Output Low Z (CE1) 15 -- -- 15 -- -- ns tCLZ2 Chip Select to Output Low Z (CE2) 15 -- -- 15 -- -- ns tGLQX tOLZ Output Enable to Output in Low Z 15 -- -- 10 -- -- ns tE1HQZ tCHZ1 Chip Deselect to Output in High Z (CE1) -- -- 40 -- -- 35 ns tE2HQZ tCHZ2 Chip Deselect to Output in High Z (CE2) -- -- 40 -- -- 35 ns tGHQZ tOHZ Output Disable to Output in High Z -- -- 35 -- -- 30 ns tAXOX tOH Data Hold from Address Change 15 -- -- 15 -- -- ns R0201-BS62UV2006 4 -- UNIT ns Revision 1.1 Jan. 2004 BSI BS62UV2006 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t t t OH AA OH D OUT READ CYCLE2 (1,3,4) CE1 CE2 t t ACS1 t ACS2 t (5) (5) CHZ1, t CHZ2 CLZ D OUT READ CYCLE3 (1,4) t RC ADDRESS t AA OE t t CE1 t CE2 (5) t OH OLZ t ACS1 CLZ1 t t OE t OHZ (5) (1,5) t CHZ1 ACS2 t (5) (2,5) CHZ2 CLZ2 D OUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2= VIH. 3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high. 4. OE = VIL . 5. The parameter is guaranteed but not 100% tested. R0201-BS62UV2006 5 Revision 1.1 Jan. 2004 BSI BS62UV2006 AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC ) WRITE CYCLE JEDEC PARAMETER NAME PARAMETER NAME tAVAX tE1LWH tAVWL tAVWH tWLWH tWHAX tE2LAX tWLQZ tDVWH tWHDX tGHQZ t WC t CW t AS t AW t WP t WR1 t WR2 t WHZ t DW t DH t OHZ tWHOX t OW DESCRIPTION CYCLE TIME : 100ns CYCLE TIME : 85ns MIN. TYP. MAX. MIN. TYP. MAX. (Vcc = 1.9~3.6V) (Vcc = 1.9~3.6V) UNIT Write Cycle Time 100 -- -- 85 -- -- ns Chip Select to End of Write 100 -- -- 85 -- -- ns ns 0 -- -- 0 -- -- Address Valid to End of Write 100 -- -- 85 -- -- ns Write Pulse Width 50 -- -- 40 -- -- ns Address Setup Time Write recovery Time (CE1,WE) 0 -- -- 0 -- -- ns Write recovery Time (CE2) 0 -- -- 0 -- -- ns -- -- 40 -- -- 35 ns Data to Write Time Overlap 40 -- -- 35 -- -- ns Data Hold from Write Time 0 -- -- 0 -- -- ns Output Disable to Output in High Z -- -- 40 -- -- 35 ns 10 -- -- 10 -- -- ns Write to Output in High Z End of Write to Output Active SWITCHING WAVEFORMS (WRITE CYCLE) t WC WRITE CYCLE1 (1) ADDRESS t (3) WR1 OE (11) t CW (5) CE1 (5) CE2 t CW t WE (11) t WR2 AW t t AS (3) WP (2) (4,10) t OHZ D OUT t DH t DW D IN R0201-BS62UV2006 6 Revision 1.1 Jan. 2004 BSI BS62UV2006 WRITE CYCLE2 (1,6) t WC ADDRESS (11) t (5) CW CE1 CE2 (5) (11) t t CW AW t WR2 t WP (3) (2) WE t AS (4,10) t WHZ D OUT t OW t DH (7) (8) t DW (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE1 going low or CE2 going high to the end of write. R0201-BS62UV2006 7 Revision 1.1 Jan. 2004 BSI BS62UV2006 ORDERING INFORMATION BS62UV2006 X X Z YY SPEED 85: 85ns 10: 100ns PKG MATERIAL -: Normal G: Green P: Pb free GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE S: SOP T: TSOP (8mm x 20mm) ST: Small TSOP (8mm x 13.4mm) D: DICE Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments. PACKAGE DIMENSIONS STSOP - 32 R0201-BS62UV2006 8 Revision 1.1 Jan. 2004 BSI BS62UV2006 PACKAGE DIMENSIONS (continued) TSOP - 32 WITH PLATING b c c1 BASE METAL b1 SECTION A-A SOP -32 R0201-BS62UV2006 9 Revision 1.1 Jan. 2004