AMD BS640GTC8V 64 megabit (4 m x 16-bit), 1.8 volt-only simultaneous read/write, burst mode flash memory Datasheet

Am29BDS640G
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. For new designs, S29WS064K
supersedes Am29BDS640G. Please refer to the S29WS-K family data sheet for specifications and
ordering information. Availability of this document is retained for reference and historical purposes
only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 25903
Revision C
Amendment 2
Issue Date May 9, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29BDS640G
64 Megabit (4 M x 16-Bit), 1.8 Volt-only
Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
This product has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640G. Please refer to the S29WS-K family
data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
Distinctive Characteristics
Architectural Advantages
„
„
Single 1.8 volt read, program and erase (1.65 to
1.95 volt)
„
Manufactured on 0.17 µm process technology
„
Enhanced VersatileIO™ (VIO) Feature
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the VIO pin
— 1.8V and 3V compatible I/O signals
„
Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture: 16Mb/16Mb/16Mb/16Mb
„
Programmable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
„
Sector Architecture
— Eight 8 Kword sectors and one hundred twenty-six
32 Kword sectors
— Banks A and D each contain four 8 Kword sectors and
thirty-one 32 Kword sectors; Banks B and C each
contain thirty-two 32 Kword sectors
— Eight 8 Kword boot sectors, four at the top of the
address range, and four at the bottom of the address
range
„
„
„
Minimum 1 million erase cycle guarantee per
sector
20-year data retention at 125°C
— Reliable operation for the life of the system
80-ball FBGA package
Hardware Features
„
Sector Protection
— Software command sector locking
„
Handshaking feature available
— Provides host system with minimum possible latency
by monitoring RDY
„
Hardware reset input (RESET#)
— Hardware method to reset the device for reading
array data
„
WP# input
— Write protect (WP#) function protects sectors 0 and 1
(bottom boot), or sectors 132 and 133 (top boot),
regardless of sector protect status
„
ACC input: Acceleration function reduces
programming time; all sectors locked when ACC =
VIL
„
CMOS compatible inputs, CMOS compatible outputs
„
Low VCC write inhibit
Software Features
„
Supports Common Flash Memory Interface (CFI)
„
Software command set compatible with JEDEC
42.4 standards
— Backwards compatible with Am29F and Am29LV
families
„
Data# Polling and toggle bits
— Provides a software method of detecting program
and erase operation completion
Erase Suspend/Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
PERFORMANCE CHARCTERISTICS
„
Read access times at 54/40 MHz (at 30 pF)
— Burst access times of 13.5/20 ns
„
— Asynchronous random access times of 70 ns
— Initial Synchronous access times as fast as 87.5/95 ns
„
Publication Number 25903
Revision C
Power dissipation (typical values, CL = 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 µA
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
Amendment 2
Issue Date May 9, 2006
D a t a
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General Description
The Am29BDS640G is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode
Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a
single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. The device
supports Enhanced VIO to offer up to 3V compatible inputs and outputs. A 12.0-volt VID
may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.
At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency of 87.5
ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a latency of 95 ns at 30 pF. The device operates within the industrial temperature range of 40°C to +85°C. The device is offered in the 80-ball FBGA package.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and
simultaneously read from another bank, with zero latency. This releases the system from
waiting for the completion of program or erase operations.
The device is divided as shown in the following table:
Bank
Quantity
Size
4
8 Kwords
31
32 Kwords
B
32
32 Kwords
C
32
32 Kwords
31
32 Kwords
4
8 Kwords
A
D
The Enhanced VersatileIO™ (VIO) control allows the host system to set the voltage levels
that the device generates at its data outputs and the voltages tolerated at its data inputs
to the same voltage level that is asserted on the VIO pin. This allows the device to operate
in 1.8 V and 3 V system environments as required.
The device uses Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to control asynchronous read and write operations. For burst operat i o n s , t h e d e v i c e a d d i t i o n a l l y r e q u i r e s Re a d y ( R DY ) , a n d C l o c k ( C L K ) . Th i s
implementation allows easy interface with minimal glue logic to a wide range of microprocessors/microcontrollers for high performance read operations.
The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset the burst length and wrap through the same memory space, or
read the flash array in continuous mode.
The clock polarity feature provides system designers a choice of active clock edges, either
rising or falling. The active clock edge initiates burst accesses and determines when data
will be output.
The device is entirely command set compatible with the JEDEC 42.4 single-powersupply Flash standard. Commands are written to the command register using standard
microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out
of the device is similar to reading from other Flash or EPROM devices.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for
any period of time to read data from, or program data to, any sector that is not selected
for erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal
state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read boot-up firmware from the Flash memory device.
The host system can detect whether a program or erase operation is complete by using
the device status bit DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or
erase cycle has been completed, the device automatically returns to reading array data.
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25903C2 May 9, 2006
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The sector erase architecture allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The device also offers two types of data
protection at the sector level. The sector lock/unlock command sequence disables or
re-enables both program and erase operations in any sector. When at VIL, WP# locks
sectors 0 and 1 (bottom boot device) or sectors 132 and 133 (top boot device).
The device offers two power-saving features. When addresses have been stable for a
specified amount of time, the device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in
both modes.
Spansion flash technology combines years of flash memory manufacturing experience to
produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The
data is programmed using hot electron injection.
May 9, 2006 25903C2
Am29BDS640G
3
P r e l i m i n a r y
Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Block Diagram of Simultaneous
Operation Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . .9
Special Handling Instructions for FBGA Package .......................... 9
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . 10
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 11
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 12
Table 1. Device Bus Operations ...........................................12
Enhanced VersatileIO™ (VIO) Control ............................................ 12
Requirements for Asynchronous Read
Operation (Non-Burst) ........................................................................ 12
Requirements for Synchronous (Burst) Read Operation ......... 13
8-, 16-, and 32-Word Linear Burst with Wrap Around ............. 14
Table 2. Burst Address Groups ............................................14
Burst Mode Configuration Register ................................................. 14
Reduced Wait-State Handshaking Option ..................................... 14
Simultaneous Read/Write Operations with Zero Latency ....... 15
Writing Commands/Command Sequences ................................... 15
Accelerated Program Operation ...................................................... 15
Autoselect Functions ............................................................................ 16
Standby Mode ......................................................................................... 16
Automatic Sleep Mode ......................................................................... 16
RESET#: Hardware Reset Input ........................................................ 16
Output Disable Mode ........................................................................... 17
Hardware Data Protection ................................................................. 17
Write Protect (WP#) ........................................................................... 17
Low VCC Write Inhibit ........................................................................ 17
Write Pulse “Glitch” Protection .......................................................18
Logical Inhibit ..........................................................................................18
Power-Up Write Inhibit ......................................................................18
VCC and VIO Power-up And Power-down Sequencing .............18
Common Flash Memory Interface (CFI) . . . . . . . 18
Table 3. CFI Query Identification String ...............................19
System Interface String..................................................... 19
Table 5. Device Geometry Definition......................................... 20
Table 6. Primary Vendor-Specific Extended Query .................21
Table 7. Sector Address Table .............................................22
Command Definitions . . . . . . . . . . . . . . . . . . . . . .26
Reading Array Data ............................................................................. 26
Set Burst Mode Configuration Register Command Sequence 26
Figure 1. Synchronous/Asynchronous State Diagram ............. 27
Read Mode Setting ............................................................................... 27
Programmable Wait State Configuration ...................................... 27
Table 8. Programmable Wait State Settings ..........................28
Reduced Wait-State Handshaking Option ....................................28
Table 9. Initial Access Cycles vs. Frequency ..........................28
Standard Handshaking Operation ................................................... 29
Table 10. Wait States for Standard Handshaking ...................29
Burst Read Mode Configuration ...................................................... 29
Table 11. Burst Read Mode Settings ....................................29
Burst Active Clock Edge Configuration ......................................... 29
RDY Configuration .............................................................................. 30
4
Configuration Register ........................................................................ 30
Table 12. Burst Mode Configuration Register ........................ 30
Sector Lock/Unlock Command Sequence .................................... 30
Reset Command .....................................................................................31
Autoselect Command Sequence .......................................................31
Program Command Sequence ...........................................................32
Unlock Bypass Command Sequence ...............................................32
Figure 2. Erase Operation.................................................. 33
Chip Erase Command Sequence ......................................................34
Sector Erase Command Sequence ...................................................34
Erase Suspend/Erase Resume Commands .....................................35
Figure 3. Program Operation.............................................. 36
Command Definitions .......................................................................... 37
Table 13. Command Definitions .......................................... 37
Write Operation Status . . . . . . . . . . . . . . . . . . . . 38
DQ7: Data# Polling ..............................................................................38
Figure 4. Data# Polling Algorithm....................................... 39
RDY: Ready .............................................................................................40
DQ6: Toggle Bit I ................................................................................. 40
Figure 5. Toggle Bit Algorithm............................................ 41
DQ2: Toggle Bit II ................................................................................. 41
Table 14. DQ6 and DQ2 Indications .................................... 42
Reading Toggle Bits DQ6/DQ2 ....................................................... 42
DQ5: Exceeded Timing Limits .......................................................... 42
DQ3: Sector Erase Timer ...................................................................43
Table 15. Write Operation Status ........................................ 43
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 44
Figure 6. Maximum Negative Overshoot Waveform ............... 44
Figure 7. Maximum Positive
Overshoot Waveform ........................................................ 44
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . 44
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 45
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 8. Test Setup ......................................................... 46
Table 16. Test Specifications .............................................. 46
Key to Switching Waveforms . . . . . . . . . . . . . . . . 46
Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . 46
Figure 9. Input Waveforms and Measurement Levels............. 46
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 10. VCC and VIO Power-up Diagram ........................... 47
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 48
Synchronous/Burst Read .................................................................... 48
Figure 11. CLK Synchronous Burst Mode Read
(rising active CLK)............................................................
Figure 12. CLK Synchronous Burst Mode Read
(Falling Active Clock) ........................................................
Figure 13. Synchronous Burst Mode Read ............................
Figure 14. 8-word Linear Burst with Wrap Around.................
Figure 15. Burst with RDY Set One Cycle Before Data............
Figure 16. Reduced Wait-State Handshaking Burst
Mode Read Starting at an Even Address ..............................
Figure 17. Reduced Wait-State Handshaking Burst Mode Read
Starting at an Odd Address................................................
49
50
51
51
52
53
54
Asynchronous Read ..............................................................................55
Figure 18. Asynchronous Mode Read with Latched Addresses .
Figure 19. Asynchronous Mode Read...................................
Figure 20. Reset Timings...................................................
Figure 21. Asynchronous Program Operation Timings ............
Am29BDS640G
55
56
57
59
25903C2 May 9, 2006
P r e l i m i n a r y
Figure 22. Alternate Asynchronous Program Operation Timings 60
Figure 23. Synchronous Program Operation Timings .............. 61
Figure 24. Alternate Synchronous Program Operation Timings 62
Figure 25. Chip/Sector Erase Command Sequence................. 63
Figure 26. Accelerated Unlock Bypass Programming Timing .... 64
Figure 27. Data# Polling Timings (During Embedded Algorithm) 65
Figure 28. Toggle Bit Timings (During Embedded Algorithm)... 65
Figure 29. Synchronous Data Polling Timings/
Toggle Bit Timings ............................................................ 66
Figure 30. Latency with Boundary Crossing .......................... 67
Figure 31. Latency with Boundary Crossing
into Program/Erase Bank ................................................... 68
May 9, 2006 25903C2
Figure 32. Example of Wait States Insertion (Standard
Handshaking Device) ........................................................ 69
Figure 33. Back-to-Back Read/Write Cycle Timings ............... 70
Erase and Programming Performance . . . . . . . . 71
FBGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . . 71
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 72
FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)
11 x 12 mm Package ...............................................................................72
Am29BDS640G
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Product Selector Guide
Part Number
Am29BDS640G
Burst Frequency
54 MHz
40 MHz
VCC = 1.65 – 1.95 V,
VIO = 2.7 – 3.15 V
D3, D4
C3, C4
VCC, VIO = 1.65 – 1.95 V
D8, D9
C8, C9
Max Initial Synchronous Access Time, ns (tIACC)
Reduced Wait-state Handshaking: Even Address
87.5
95
Max Initial Synchronous Access Time, ns (tIACC)
Reduced Wait-state Handshaking: Odd Address; or Standard Handshaking
106
120
Max Burst Access Time, ns (tBACC)
13.5
20
70
90
13.5
20
Speed Option
Max Asynchronous Access Time, ns (tACC)
Max CE# Access, ns (tCE)
Max OE# Access, ns (tOE)
Notes:
1. Speed Options ending in “3” and “8” indicate the “reduced wait-state handshaking” option, which speeds initial
synchronous accesses for even addresses.
2. Speed Options ending in “4” and “9” indicate the “standard handshaking” option.
3. See the AC Characteristics section of this datasheet for full specifications.
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Block Diagram
VCC
VSS
VSSIO
VIO
DQ15–DQ0
RDY
Buffer
RDY
Erase Voltage
Generator
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC
Detector
AVD#
CLK
Burst
State
Control
Timer
Burst
Address
Counter
Address Latch
WE#
RESET#
WP#
ACC
Input/Output
Buffers
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A21–A0
May 9, 2006 25903C2
Am29BDS640G
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Block Diagram of Simultaneous
Operation Circuit
VCC
Bank A Address
Bank A
Latches and
Control Logic
VSSIO
Y-Decoder
VSS
VIO
DQ15–DQ0
A21–A0
X-Decoder
OE#
WP#
ACC
RESET#
WE#
CE#
AVD#
RDY
DQ15–DQ0
Bank B
Latches and
Control Logic
Y-Decoder
Bank B Address
DQ15–DQ0
X-Decoder
A21–A0
STATE
CONTROL
&
COMMAND
REGISTER
DQ15–DQ0
Status
Control
A21–A0
A21–A0
Bank C
Latches and
Control Logic
Bank C Address
Y-Decoder
X-Decoder
DQ15–DQ0
A21–A0
8
Bank D
Am29BDS640G
Latches and
Control Logic
Bank D Address
Y-Decoder
X-Decoder
DQ15–DQ0
25903C2 May 9, 2006
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Connection Diagram
80-ball Fine-Pitch Ball Grid Array
(Top View, Balls Facing Down)
A8
B8
C8
D8
E8
F8
G8
H8
J8
K8
L8
M8
NC
NC
NC
NC
NC
VIO
VSSIO
NC
NC
NC
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
J7
K7
L7
M7
NC
NC
A13
A12
A14
A15
A16
NC
DQ15
VSS
NC
NC
C6
D6
E6
F6
G6
H6
J6
K6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A2
B2
C5
D5
E5
F5
G5
H5
J5
K5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
C4
D4
E4
F4
G4
H4
J4
K4
RDY
ACC
A18
A20
DQ2
DQ10
DQ11
DQ3
C3
D3
E3
F3
G3
H3
J3
K3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
C2
D2
E2
F2
G2
H2
J2
K2
L2
M2
NC
NC
NC
NC
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
J1
K1
L1
M1
NC
NC
NC
VCC
CLK
WP#
AVD#
VIO
VSSIO
NC
NC
NC
Special Handling Instructions for FBGA Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised
if the package body is exposed to temperatures above 150°C for prolonged periods of time.
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Am29BDS640G
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Input/Output Descriptions
A21-A0
DQ15-DQ0
CE#
=
=
=
OE#
=
WE#
VCC
=
=
VIO
=
VSS
VSSIO
NC
RDY
=
=
=
=
CLK
=
AVD#
=
RESET#
=
WP#
=
ACC
=
Address inputs
Data input/output
Chip Enable input. Asynchronous relative to CLK for
the Burst mode.
Output Enable input. Asynchronous relative to CLK
for the Burst mode.
Write Enable input.
Device Power Supply
(1.65 – 1.95 V).
Input & Output Buffer Power Supply (either 1.65 –
1.95 V or 2.7 – 3.15 V).
Ground
Output Buffer Ground
No Connect; not connected internally
Ready output; indicates the status of the Burst read.
Low = data not valid at expected time. High = data
valid.
CLK is not required in asynchronous mode. In burst
mode, after the initial word is output, subsequent
active edges of CLK increment the internal address
counter.
Address Valid input. Indicates to device that the valid
address is present on the address inputs (A21–A0).
Low = for asynchronous mode, indicates valid
address; for burst mode, causes starting address to
be latched.
High = device ignores address inputs
Hardware reset input. Low = device resets and
returns to reading array data
Hardware write protect input. At VIL, disables
program and erase functions in the two outermost
sectors. Should be at VIH for all other conditions.
At VID, accelerates programming; automatically
places device in unlock bypass mode. At VIL, locks all
sectors. Should be at VIH for all other conditions.
Logic Symbol
22
A21–A0
CLK
16
DQ15–DQ0
WP#
ACC
CE#
OE#
WE#
RESET#
RDY
AVD#
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Ordering Information
The order number (Valid Combination) is formed by the following:
Am29BDS640G
T
D
8
WS
I
TEMPERATURE RANGE
= Industrial (–40°C to +85°C)
I
PACKAGE TYPE
WS
= 80-Ball Fine-Pitch Grid Array (FBGA)
0.80 mm pitch, 11 x 12 mm package (FBE080)
VIO AND HANDSHAKING FEATURES
8
9
3
4
=
=
=
=
1.8 V VIO, reduced wait-state handshaking
1.8 V VIO, standard handshaking
3 V VIO, reduced wait-state handshaking
3 V VIO, standard handshaking
CLOCK RATE/ASYNCHRONOUS SPEED
D
C
= 54 MHz/70 ns
= 40 MHz/90 ns
BOOT CODE SECTOR ARCHITECTURE
T
B
= Top boot sector
= Bottom boot sector
DEVICE NUMBER/DESCRIPTION
Am29BDS640G
64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write,
Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase
Valid Combinations
Order Number
Package Marking
Am29BDS640GTD8
Am29BDS640GBD8
BS640GTD8V
BS640GBD8V
Am29BDS640GTD9
Am29BDS640GBD9
BS640GTD9V
BS640GBD9V
Am29BDS640GTC8
Am29BDS640GBC8
WSI
BS640GTC8V
BS640GBC8V
Am29BDS640GTC9
Am29BDS640GBC9
BS640GTC9V
BS640GBC9V
Am29BDS640GTD3
Am29BDS640GBD3
BS640GTD3V
BS640GBD3V
Am29BDS640GTD4
Am29BDS640GBD4
BS640GTD4V
BS640GBD4V
Am29BDS640GTC3
Am29BDS640GBC3
Am29BDS640GTC4
Am29BDS640GBC4
WSI
BS640GTC3V
BS640GBC3V
BS640GTC4V
BS640GBC4V
Burst Frequency
(MHz)
VIO Range
54
1.65–1.95V
40
54
2.7–3.15V
40
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this
device. Consult the local AMD sales office to confirm availability of specific valid
combinations and to check on newly released combinations.
Note: For the Am29BDS640G, the last digit of the speed grade specifies the VIO range
of the device. Speed options ending in “8” and “9” (e.g., D8, D9) indicate a 1.8 Volt
VIO range. Speed grades ending in “3” and “4” (e.g., D3, D4) indicate a 3.0 Volt VIO
range.
May 9, 2006 25903C2
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Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data
information needed to execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the
function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1. Device Bus Operations
CLK
(See
RESET# Note)
CE#
OE#
WE#
A21–0
DQ15–0
Asynchronous Read - Addresses Latched
L
L
H
Addr In
I/O
H
X
Asynchronous Read - Addresses Steady State
L
L
H
Addr In
I/O
H
X
L
Asynchronous Write
L
H
L
Addr In
I/O
H
L
L
Synchronous Write
L
H
L
Addr In
I/O
H
Standby (CE#)
H
X
X
HIGH Z
HIGH Z
H
X
X
Hardware Reset
X
X
X
HIGH Z
HIGH Z
L
X
X
Load Starting Burst Address
L
X
H
Addr In
X
H
Advance Burst to next address with
appropriate Data presented on the Data Bus
L
L
H
HIGH Z
Burst
Data Out
H
H
Terminate current Burst read cycle
H
X
H
HIGH Z
HIGH Z
H
X
Terminate current Burst read cycle via RESET#
X
X
H
HIGH Z
HIGH Z
L
Terminate current Burst read cycle and start
new Burst read cycle
L
X
H
HIGH Z
I/O
H
Operation
AVD#
Burst Read Operations
X
X
Legend: L = Logic 0, H = Logic 1, X = Don’t Care, S = Stable Logic 0 or 1 but no transitions.
Note: Default active edge of CLK is the rising edge.
Enhanced VersatileIO™ (VIO) Control
The Enhanced VersatileIO (VIO) control allows the host system to set the voltage
levels that the device generates at its data outputs and the voltages tolerated at
its data and address inputs to the same voltage level that is asserted on the VIO
pin. The device is available with either 1.65–1.95 or 2.7–3.15 VIO. This allows the
device to operate in 1.8 V or 3 V system environments as required.
For example, a VIO of 2.7 – 3.15 volts allows for I/O at the 3 volt level, driving
and receiving signals to and from other 3 V devices on the same bus.
Requirements for Asynchronous Read
Operation (Non-Burst)
To read data from the memory array, the system must first assert a valid address
on A21–A0, while driving AVD# and CE# to VIL. WE# should remain at VIH. The
rising edge of AVD# latches the address. The data will appear on DQ15–DQ0.
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Since the memory array is divided into four banks, each bank remains enabled
for read access until the command register contents are altered.
Address access time (tACC) is equal to the delay from stable addresses to valid
output data. The chip enable access time (tCE) is the delay from the stable addresses and stable CE# to valid data at the outputs. The output enable access
time (tOE) is the delay from the falling edge of OE# to valid data at the output.
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the memory
content occurs during the power transition.
Requirements for Synchronous (Burst) Read Operation
The device is capable of continuous sequential burst operation and linear burst
operation of a preset length. When the device first powers up, it is enabled for
asynchronous read operation.
Prior to entering burst mode, the system should determine how many wait states
are desired for the initial word (tIACC) of each burst access, what mode of burst
operation is desired, which edge of the clock will be the active clock edge, and
how the RDY signal will transition with valid data. The system would then write
the burst mode configuration register command sequence. See “Set Burst Mode
Configuration Register Command Sequence” and “Command Definitions” for further details.
Once the system has written the “Set Burst Mode Configuration Register” command sequence, the device is enabled for synchronous reads only.
The initial word is output tIACC after the active edge of the first CLK cycle. Subsequent words are output tBACC after the active edge of each successive clock
cycle, which automatically increments the internal address counter. Note that the
device has a fixed internal address boundary that occurs every 64 words, starting
at address 00003Fh. During the time the device is outputting data at this fixed
internal address boundary (address 00003Fh, 00007Fh, 0000BFh, etc.), a two
cycle latency occurs before data appears for the next address (address 000040h,
000080h, 0000C0h, etc.). The RDY output indicates this condition to the system
by pulsing low. For standard handshaking devices, there is no two cycle latency
between 3Fh and 40h (or addresses offset from 3F and 40h by a multiple of 64).
See Table 10.
For reduced wait-state handshaking devices, if the address latched is 3Dh (or offset from 3Dh by a multiple of 64), an additional cycle latency occurs prior to the
initial access. If the address latched is 3Eh (or offset from 3Eh by a multiple of
64) two additional cycle latency occurs prior to the initial access and the 2 cycle
latency between 3Fh and 40h (or offset from 3Fh by a multiple of 64) will not occur. For 3Fh latched addresses (or offset from 3Fh by a multiple of 64) three
additional cycle latency occurs prior to the initial access and the 2 cycle latency
between 3Fh and 40h (or offset from these addresses by a multiple of 64) will not
occur.
The device will continue to output sequential burst data, wrapping around to address 000000h after it reaches the highest addressable memory location, until
the system drives CE# high, RESET# low, or AVD# low in conjunction with a new
address. See Table 1, “Device Bus Operations,” on page 12.
If the host system crosses the bank boundary while reading in burst mode, and
the device is not programming or erasing, a two-cycle latency will occur as described above in the subsequent bank. If the host system crosses the bank
May 9, 2006 25903C2
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boundary while the device is programming or erasing, the device will provide read
status information. The clock will be ignored. After the host has completed status
reads, or the device has completed the program or erase operation, the host can
restart a burst operation using a new address and AVD# pulse.
If the clock frequency is less than 6 MHz during a burst mode operation, additional latencies will occur. RDY indicates the length of the latency by pulsing low.
8-, 16-, and 32-Word Linear Burst with Wrap Around
The remaining three modes are of the linear wrap around design, in which a fixed
number of words are read from consecutive addresses. In each of these modes,
the burst addresses read are determined by the group within which the starting
address falls. The groups are sized according to the number of words read in a
single burst sequence for a given mode (see Table 2.)
Table 2.
Burst Address Groups
Mode
Group Size
Group Address Ranges
8-word
8 words
0-7h, 8-Fh, 10-17h, ...
16-word
16 words
0-Fh, 10-1Fh, 20-2Fh, ...
32-word
32 words
00-1Fh, 20-3Fh, 40-5Fh, ...
As an example: if the starting address in the 8-word mode is 39h, the address
range to be read would be 38-3Fh, and the burst sequence would be 39-3A-3B3C-3D-3E-3F-38h-etc. The burst sequence begins with the starting address written to the device, but wraps back to the first address in the selected group. In a
similar fashion, the 16-word and 32-word Linear Wrap modes begin their burst
sequence on the starting address written to the device, and then wrap back to
the first address in the selected address group. Note that in these three burst
read modes the address pointer does not cross the boundary that occurs
every 64 words; thus, no wait states are inserted (except during the initial access).
The RDY pin indicates when data is valid on the bus. The devices can wrap
through a maximum of 128 words of data (8 words up to 16 times, 16 words up
to 8 times, or 32 words up to 4 times) before requiring a new synchronous access
(latching of a new address).
Burst Mode Configuration Register
The device uses a configuration register to set the various burst parameters:
number of wait states, burst read mode, active clock edge, RDY configuration,
and synchronous mode active.
Reduced Wait-State Handshaking Option
The device can be equipped with a reduced wait-state handshaking feature that
allows the host system to simply monitor the RDY signal from the device to determine when the initial word of burst data is ready to be read. The host system
should use the programmable wait state configuration to set the number of wait
states for optimal burst mode operation. The initial word of burst data is indicated
by the rising edge of RDY after OE# goes low.
The presence of the reduced wait-state handshaking feature may be verified by
writing the autoselect command sequence to the device. See “Autoselect Command Sequence” for details.
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For optimal burst mode performance on devices without the reduced wait-state
handshaking option, the host system must set the appropriate number of wait
states in the flash device depending on clock frequency and the presence of a
boundary crossing. See “Set Burst Mode Configuration Register Command Sequence” section on page 26 section for more information. The device will
automatically delay RDY and data by one additional clock cycle when the starting
address is odd.
The autoselect function allows the host system to determine whether the flash
device is enabled for reduced wait-state handshaking. See the “Autoselect Command Sequence” section for more information.
Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in another bank of memory. An erase operation may also be
suspended to read from or program to another location within the same bank (except the sector being erased). Figure 33, “Back-to-Back Read/Write Cycle
Timings,” on page 70 shows how read and write cycles may be initiated for simultaneous operation with zero latency. Refer to the DC Characteristics table for
read-while-program and read-while-erase current specifications.
Writing Commands/Command Sequences
The device has the capability of performing an asynchronous or synchronous
write operation. During a synchronous write operation, to write a command or
command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive AVD# and CE# to VIL, and OE# to
VIH when providing an address to the device, and drive WE# and CE# to VIL, and
OE# to VIH. when writing commands or data. During an asynchronous write operation, the system must drive CE#, WE#, and CLK to VIL and OE# to VIH when
providing an address, command, and data. The asynchronous and synchronous
programing operation is independent of the Set Device Read Mode bit in the Burst
Mode Configuration Register.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 8, “Programmable Wait State Settings,” on page 28 indicates the address
space that each sector occupies. The device address space is divided into four
banks: Banks B and C contain only 32 Kword sectors, while Banks A and D contain
both 8 Kword boot sectors in addition to 32 Kword sectors. A “bank address” is
the address bits required to uniquely select a bank. Similarly, a “sector address”
is the address bits required to uniquely select a sector.
ICC2 in the DC Characteristics table represents the active current specification for
the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. ACC
is primarily intended to allow faster manufacturing throughput at the factory.
If the system asserts VID on this input, the device automatically enters the aforementioned Unlock Bypass mode and uses the higher voltage on the input to
reduce the time required for program operations. The system would use a two-
May 9, 2006 25903C2
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cycle program command sequence as required by the Unlock Bypass mode. Removing VID from the ACC input returns the device to normal operation. Note that
sectors must be unlocked prior to raising ACC to VID. Note that the ACC pin must
not be at VID for operations other than accelerated programming, or device damage may result. In addition, the ACC pin must not be left floating or unconnected;
inconsistent behavior of the device may result.
When at VIL, ACC locks all sectors. ACC should be at VIH for all other conditions.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ15–DQ0. Autoselect
mode may only be entered and used when in the asynchronous read mode. Refer
to the “Autoselect Command Sequence” section on page 31 section for more
information.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# inputs are
both held at VCC ± 0.2 V. The device requires standard access time (tCE) for read
access, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 in the DC Characteristics table represents the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. While in
asynchronous mode, the device automatically enables this mode when addresses
remain stable for tACC + 60 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output data is
latched and always available to the system. While in synchronous mode, the device automatically enables this mode when either the first active CLK edge occurs
after tACC or the CLK runs slower than 5MHz. Note that a new burst operation is
required to provide new data.
ICC4 in the “DC Characteristics” section on page 45 represents the automatic
sleep mode current specification.
RESET#: Hardware Reset Input
The RESET# input provides a hardware method of resetting the device to reading
array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, resets the
configuration register, and ignores all read/write commands for the duration of
the RESET# pulse. The device also resets the internal state machine to reading
array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity.
16
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Current is reduced for the duration of the RESET# pulse. When RESET# is held
at VSS ± 0.2 V, the device draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS ± 0.2 V, the standby current will be greater.
RESET# may be tied to the system reset circuitry. A system reset would thus also
reset the Flash memory, enabling the system to read the boot-up firmware from
the Flash memory.
If RESET# is asserted during a program or erase operation, the device requires
a time of tREADY (during Embedded Algorithms) before the device is ready to read
data again. If RESET# is asserted when a program or erase operation is not executing, the reset operation is completed within a time of tREADY (not during
Embedded Algorithms). The system can read data tRH after RESET# returns to
VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 20,
“Reset Timings,” on page 57 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The outputs are
placed in the high impedance state.
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to Table 13, “Command
Definitions,” on page 37 for command definitions).
The device offers two types of data protection at the sector level:
„ The sector lock/unlock command sequence disables or re-enables both program and erase operations in any sector.
„ When WP# is at VIL, sectors 0 and 1 (bottom boot) or sectors 132 and 133
(top boot) are locked.
„ When ACC is at VIL, all sectors are locked.
The following hardware data protection measures prevent accidental erasure or
programming, which might otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or from system noise.
Write Protect (WP#)
The Write Protect (WP#) input provides a hardware method of protecting data
without using VID.
If the system asserts VIL on the WP# pin, the device disables program and erase
functions in sectors 0 and 1 (bottom boot) or sectors 132 and 133 (top boot).
If the system asserts VIH on the WP# pin, the device reverts to whether the two
outermost 8K Byte boot sectors were last set to be protected or unprotected.
Note that the WP# pin must not be left floating or unconnected; inconsistent behavior of the device may result.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets to reading
array data. Subsequent writes are ignored until VCC is greater than VLKO. The sys-
May 9, 2006 25903C2
Am29BDS640G
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tem must provide the proper signals to the control inputs to prevent unintentional
writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# =
VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does
not accept commands on the rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
VCC and VIO Power-up And Power-down Sequencing
The device imposes no restrictions on VCC and VIO power-up or power-down sequencing. Asserting RESET# to VIL is required during the entire VCC and VIO
power sequence until the respective supplies reach their operating voltages. Once
VCC and VIO attain their respective operating voltages, de-assertion of RESET#
to VIH is permitted.
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system
software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can
then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can
standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query
command, 98h, to address 55h any time the device is ready to read array data.
The system can read CFI information at the addresses given in Tables 3-6. To terminate reading CFI data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 3-6. The system must write the reset
command to return the device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication
100, available via the web at the following URL: http://www.amd.com/flash/cfi.
Alternatively, contact an sales office or representative for copies of these
documents.
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25903C2 May 9, 2006
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Table 3.
S h e e t
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 4.
System Interface String
Addresses
Data
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
May 9, 2006 25903C2
Description
Am29BDS640G
19
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Table 5.
20
S h e e t
Device Geometry Definition
Addresses
Data
Description
27h
0017h
Device Size = 2 byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0003h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
0003h
0000h
0040h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
N
Am29BDS640G
25903C2 May 9, 2006
D a t a
Table 6.
S h e e t
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0004h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Technology (Bits 5-2) 0001 = 0.17 µm
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0005h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
0063h
Simultaneous Operation
Number of Sectors in all banks except boot block
4Bh
0001h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
00B5h
4Eh
00C5h
4Fh
00xxh
50h
0000h
Program Suspend. 00h = not supported
57h
0004h
Bank Organization: X = Number of banks
58h
0023h
Bank A Region Information. X = Number of sectors in bank
59h
0020h
Bank B Region Information. X = Number of sectors in bank
5Ah
0020h
Bank C Region Information. X = Number of sectors in bank
5Bh
0023h
Bank D Region Information. X = Number of sectors in bank
May 9, 2006 25903C2
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Am29BDS640G
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D a t a
Table 7.
Bank D
22
S h e e t
Sector Address Table
Sector
Sector Size
(x16) Address Range
SA0
8 Kwords
000000h-001FFFh
SA1
8 Kwords
002000h-003FFFh
SA2
8 Kwords
004000h-005FFFh
SA3
8 Kwords
006000h-007FFFh
SA4
32 Kwords
008000h-00FFFFh
SA5
32 Kwords
010000h-017FFFh
SA6
32 Kwords
018000h-01FFFFh
SA7
32 Kwords
020000h-027FFFh
SA8
32 Kwords
028000h-02FFFFh
SA9
32 Kwords
030000h-037FFFh
SA10
32 Kwords
038000h-03FFFFh
SA11
32 Kwords
040000h-047FFFh
SA12
32 Kwords
048000h-04FFFFh
SA13
32 Kwords
050000h-057FFFh
SA14
32 Kwords
058000h-05FFFFh
SA15
32 Kwords
060000h-067FFFh
SA16
32 Kwords
068000h-06FFFFh
SA17
32 Kwords
070000h-077FFFh
SA18
32 Kwords
078000h-07FFFFh
SA19
32 Kwords
080000h-087FFFh
SA20
32 Kwords
088000h-08FFFFh
SA21
32 Kwords
090000h-097FFFh
SA22
32 Kwords
098000h-09FFFFh
SA23
32 Kwords
0A0000h-0A7FFFh
SA24
32 Kwords
0A8000h-0AFFFFh
SA25
32 Kwords
0B0000h-0B7FFFh
SA26
32 Kwords
0B8000h-0BFFFFh
SA27
32 Kwords
0C0000h-0C7FFFh
SA28
32 Kwords
0C8000h-0CFFFFh
SA29
32 Kwords
0D0000h-0D7FFFh
SA30
32 Kwords
0D8000h-0DFFFFh
SA31
32 Kwords
0E0000h-0E7FFFh
SA32
32 Kwords
0E8000h-0EFFFFh
SA33
32 Kwords
0F0000h-0F7FFFh
SA34
32 Kwords
0F8000h-0FFFFFh
Am29BDS640G
25903C2 May 9, 2006
D a t a
Table 7.
Bank C
May 9, 2006 25903C2
S h e e t
Sector Address Table (Continued)
Sector
Sector Size
(x16) Address Range
SA35
32 Kwords
100000h-107FFFh
SA36
32 Kwords
108000h-10FFFFh
SA37
32 Kwords
110000h-117FFFh
SA38
32 Kwords
118000h-11FFFFh
SA39
32 Kwords
120000h-127FFFh
SA40
32 Kwords
128000h-12FFFFh
SA41
32 Kwords
130000h-137FFFh
SA42
32 Kwords
138000h-13FFFFh
SA43
32 Kwords
140000h-147FFFh
SA44
32 Kwords
148000h-14FFFFh
SA45
32 Kwords
150000h-157FFFh
SA46
32 Kwords
158000h-15FFFFh
SA47
32 Kwords
160000h-167FFFh
SA48
32 Kwords
168000h-16FFFFh
SA49
32 Kwords
170000h-177FFFh
SA50
32 Kwords
178000h-17FFFFh
SA51
32 Kwords
180000h-187FFFh
SA52
32 Kwords
188000h-18FFFFh
SA53
32 Kwords
190000h-197FFFh
SA54
32 Kwords
198000h-19FFFFh
SA55
32 Kwords
1A0000h-1A7FFFh
SA56
32 Kwords
1A8000h-1AFFFFh
SA57
32 Kwords
1B0000h-1B7FFFh
SA58
32 Kwords
1B8000h-1BFFFFh
SA59
32 Kwords
1C0000h-1C7FFFh
SA60
32 Kwords
1C8000h-1CFFFFh
SA61
32 Kwords
1D0000h-1D7FFFh
SA62
32 Kwords
1D8000h-1DFFFFh
SA63
32 Kwords
1E0000h-1E7FFFh
SA64
32 Kwords
1E8000h-1EFFFFh
SA65
32 Kwords
1F0000h-1F7FFFh
SA66
32 Kwords
1F8000h-1FFFFFh
Am29BDS640G
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Table 7.
Bank B
24
S h e e t
Sector Address Table (Continued)
Sector
Sector Size
(x16) Address Range
SA67
32 Kwords
200000h-207FFFh
SA68
32 Kwords
208000h-20FFFFh
SA69
32 Kwords
210000h-217FFFh
SA70
32 Kwords
218000h-21FFFFh
SA71
32 Kwords
220000h-227FFFh
SA72
32 Kwords
228000h-22FFFFh
SA73
32 Kwords
230000h-237FFFh
SA74
32 Kwords
238000h-23FFFFh
SA75
32 Kwords
240000h-247FFFh
SA76
32 Kwords
248000h-24FFFFh
SA77
32 Kwords
250000h-257FFFh
SA78
32 Kwords
258000h-25FFFFh
SA79
32 Kwords
260000h-267FFFh
SA80
32 Kwords
268000h-26FFFFh
SA81
32 Kwords
270000h-277FFFh
SA82
32 Kwords
278000h-27FFFFh
SA83
32 Kwords
280000h-287FFFh
SA84
32 Kwords
288000h-28FFFFh
SA85
32 Kwords
290000h-297FFFh
SA86
32 Kwords
298000h-29FFFFh
SA87
32 Kwords
2A0000h-2A7FFFh
SA88
32 Kwords
2A8000h-2AFFFFh
SA89
32 Kwords
2B0000h-2B7FFFh
SA90
32 Kwords
2B8000h-2BFFFFh
SA91
32 Kwords
2C0000h-2C7FFFh
SA92
32 Kwords
2C8000h-2CFFFFh
SA93
32 Kwords
2D0000h-2D7FFFh
SA94
32 Kwords
2D8000h-2DFFFFh
SA95
32 Kwords
2E0000h-2E7FFFh
SA96
32 Kwords
2E8000h-2EFFFFh
SA97
32 Kwords
2F0000h-2F7FFFh
SA98
32 Kwords
2F8000h-2FFFFFh
Am29BDS640G
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Table 7.
Bank A
May 9, 2006 25903C2
S h e e t
Sector Address Table (Continued)
Sector
Sector Size
(x16) Address Range
SA99
32K words
300000h-307FFFh
SA100
32K words
308000h-30FFFFh
SA101
32K words
310000h-317FFFh
SA102
32K words
318000h-31FFFFh
SA103
32K words
320000h-327FFFh
SA104
32K words
328000h-32FFFFh
SA105
32K words
330000h-337FFFh
SA106
32K words
338000h-33FFFFh
SA107
32K words
340000h-347FFFh
SA108
32K words
348000h-34FFFFh
SA109
32K words
350000h-357FFFh
SA110
32K words
358000h-35FFFFh
SA111
32K words
360000h-367FFFh
SA112
32K words
368000h-36FFFFh
SA113
32K words
370000h-377FFFh
SA114
32K words
378000h-37FFFFh
SA115
32K words
380000h-387FFFh
SA116
32K words
388000h-38FFFFh
SA117
32K words
390000h-397FFFh
SA118
32K words
398000h-39FFFFh
SA119
32K words
3A0000h-3A7FFFh
SA120
32K words
3A8000h-3AFFFFh
SA121
32K words
3B0000h-3B7FFFh
SA122
32K words
3B8000h-3BFFFFh
SA123
32K words
3C0000h-3C7FFFh
SA124
32K words
3C8000h-3CFFFFh
SA125
32K words
3D0000h-3D7FFFh
SA126
32K words
3D8000h-3DFFFFh
SA127
32K words
3E0000h-3E7FFFh
SA128
32K words
3E8000h-3EFFFFh
SA129
32K words
3F0000h-3F7FFFh
SA130
8K words
3F8000h-3F9FFFh
SA131
8K words
3FA000h-3FBFFFh
SA132
8K words
3FC000h-3FDFFFh
SA133
8K words
3FE000h-3FFFFFh
Am29BDS640G
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Command Definitions
Writing specific address and data commands or sequences into the command
register initiates device operations. Table 13, “Command Definitions,” on page 37
defines the valid register command sequences. Note that writing incorrect address and data values or writing them in the improper sequence may place the
device in an unknown state. A reset command is required to return the device to
normal operation.
Refer to the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data in asynchronous mode. Each bank is
ready to read array data after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank
enters the erase-suspend-read mode, after which the system can read data from
any non-erase-suspended sector within the same bank. After completing a programming operation in the Erase Suspend mode, the system may once again
read array data with the same exception. See the “Erase Suspend/Erase Resume
Commands” section on page 35 section for more information.
The system must issue the reset command to return a bank to the read (or erasesuspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the “Reset Command” section
on page 31 section for more information.
See also “Requirements for Asynchronous Read Operation (Non-Burst)” and “Requirements for Synchronous (Burst) Read Operation” sections for more
information. The Asynchronous Read and Synchronous/Burst Read tables provide
the read parameters, and Figures 11, 13, and 18 show the timings.
Set Burst Mode Configuration Register Command Sequence
The device uses a burst mode configuration register to set the various burst parameters: number of wait states, burst read mode, active clock edge, RDY
configuration, and synchronous mode active. The burst mode configuration register must be set before the device will enter burst mode.
The burst mode configuration register is loaded with a three-cycle command sequence. The first two cycles are standard unlock sequences. On the third cycle,
the data should be C0h, address bits A11–A0 should be 555h, and address bits
A19–A12 set the code to be latched. The device will power up or after a hardware
reset with the default setting, which is in asynchronous mode. The register must
be set before the device can enter synchronous mode. The burst mode configuration register can not be changed during device operations (program, erase, or
sector lock).
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Power-up/
Hardware Reset
Asynchronous Read
Mode Only
Set Burst Mode
Configuration Register
Command for
Synchronous Mode
(A19 = 0)
Set Burst Mode
Configuration Register
Command for
Asynchronous Mode
(A19 = 1)
Synchronous Read
Mode Only
Figure 1. Synchronous/Asynchronous State Diagram
Read Mode Setting
On power-up or hardware reset, the device is set to be in asynchronous read
mode. This setting allows the system to enable or disable burst mode during system operations. Address A19 determines this setting: “1’ for asynchronous mode,
“0” for synchronous mode.
Programmable Wait State Configuration
The programmable wait state feature informs the device of the number of clock
cycles that must elapse after AVD# is driven active before data will be available.
This value is determined by the input frequency of the device. Address bits A14–
A12 determine the setting (see Table 8).
The wait state command sequence instructs the device to set a particular number
of clock cycles for the initial access in burst mode. The number of wait states that
should be programmed into the device is directly related to the clock frequency.
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Table 8.
S h e e t
Programmable Wait State Settings
A14
A13
A12
Total Initial
Access Cycles
0
0
0
2
0
0
1
3
0
1
0
4
0
1
1
5
1
0
0
6
1
0
1
7
Notes:
1. Upon power-up or hardware reset, the default setting is seven wait states.
2. RDY will default to being active with data when the Wait State Setting is set to a
total initial access cycle of 2.
3. Assumes even address.
It is recommended that the wait state command sequence be written, even if the
default wait state value is desired, to ensure the device is set as expected. A
hardware reset will set the wait state to the default setting.
Reduced Wait-State Handshaking Option
If the device is equipped with the reduced wait-state handshaking option, the
host system should set address bits A14–A12 to 010 for a clock frequency of 40
MHz or to 011 for a clock frequency of 54 MHz for the system/device to execute
at maximum speed.
Table 9 describes the typical number of clock cycles (wait states) for various
conditions.
Table 9.
System
Frequency
Range
Even
Initial
Addr.
Initial Access Cycles vs. Frequency
Odd
Initial
Addr.
Even
Initial
Addr.
with
Boundary
Odd Initial
Addr.
with
Boundary
6–11 MHz
2
2
3
4
12–23 MHz
2
3
4
5
24–33 MHz
3
4
5
6
34–40 MHz
4
5
6
7
40–47 MHz
4
5
6
7
48–54 MHz
5
6
7
8
Device Speed
Rating
40 MHz
54 MHz
Note: In the 8-, 16- and 32-word burst read modes, the address pointer does not
cross 64-word boundaries (addresses which are multiples of 3Fh).
The autoselect function allows the host system to determine whether the flash
device is enabled for reduced wait-state handshaking. See the “Autoselect Command Sequence” section for more information.
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Standard Handshaking Operation
For optimal burst mode performance on devices without the handshaking option,
the host system must set the appropriate number of wait states in the flash device depending on the clock frequency.
Table 10 describes the typical number of clock cycles (wait states) for various
conditions with A14–A12 set to 101.
Table 10.
Wait States for Standard Handshaking
Typical No. of Clock Cycles after
AVD# Low
Conditions at Address
40/54 MHz
Initial address is even
7
Initial address is odd
7
Initial address is even,
and is at boundary crossing*
7
Initial address is odd,
and is at boundary crossing*
7
* In the 8-, 16- and 32-word burst read modes, the address pointer does not cross
64-word boundaries (addresses which are multiples of 3Fh).
Burst Read Mode Configuration
The device supports four different burst read modes: continuous mode, and 8,
16, and 32 word linear wrap around modes. A continuous sequence begins at the
starting address and advances the address pointer until the burst operation is
complete. If the highest address in the device is reached during the continuous
burst read mode, the address pointer wraps around to the lowest address.
For example, an eight-word linear burst with wrap around begins on the starting
burst address written to the device and then proceeds until the next 8 word
boundary. The address pointer then returns to the first word of the burst sequence, wrapping back to the starting location. The sixteen- and thirty-two linear
wrap around modes operate in a fashion similar to the eight-word mode.
Table 11 shows the address bits and settings for the four burst read modes.
Table 11.
Burst Read Mode Settings
Address Bits
A16
A15
Continuous
0
0
8-word linear wrap around
0
1
16-word linear wrap around
1
0
32-word linear wrap around
1
1
Burst Modes
Note: Upon power-up or hardware reset the default setting is continuous.
Burst Active Clock Edge Configuration
By default, the device will deliver data on the rising edge of the clock after the
initial synchronous access time. Subsequent outputs will also be on the following
rising edges, barring any delays. The device can be set so that the falling clock
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edge is active for all synchronous accesses. Address bit A17 determines this setting; “1” for rising active, “0” for falling active.
RDY Configuration
By default, the device is set so that the RDY pin will output VOH whenever there
is valid data on the outputs. The device can be set so that RDY goes active one
data cycle before active data. Address bit A18 determines this setting; “1” for
RDY active with data, “0” for RDY active one clock cycle before valid data.
Configuration Register
Table 12 shows the address bits that determine the configuration register settings
for various device functions.
Table 12.
Burst Mode Configuration Register
Address Bit
Function
A19
Set Device Read Mode
A18
RDY
0 = RDY active one clock cycle before data
1 = RDY active with data (default)
A17
Clock
0 = Burst starts and data is output on the falling edge of CLK
1 = Burst starts and data is output on the rising edge of CLK (default)
A16
A15
Burst Read Mode
A14
A13
A12
Programmable
Wait State
Settings (Binary)
0 = Synchronous Read (Burst Mode) Enabled
1 = Asynchronous Mode (default)
00
01
10
11
=
=
=
=
Continuous (default)
8-word linear with wrap around
16-word linear with wrap around
32-word linear with wrap around
000 = Data is valid on the 2nd active CLK edge after AVD# transition to VIH
001 = Data is valid on the 3rd active CLK edge after AVD# transition to VIH
010 = Data is valid on the 4th active CLK edge after AVD# transition to VIH
011 = Data is valid on the 5th active CLK edge after AVD# transition to VIH
100 = Data is valid on the 6th active CLK edge after AVD# transition to VIH
101 = Data is valid on the 7th active CLK edge after AVD# transition to VIH (default)
Note: Device will be in the default state upon power-up or hardware reset.
Sector Lock/Unlock Command Sequence
The sector lock/unlock command sequence allows the system to determine which
sectors are protected from accidental writes. When the device is first powered up,
all sectors are locked. To unlock a sector, the system must write the sector lock/
unlock command sequence. In the first and second cycles, the address must point
to the bank that contains the sector(s) to be locked or unlocked. The first and
second cycle data is 60h. In the third cycle, the address must point to the target
sector, and A6 is used to specify a lock (A6 = VIL) or unlock (A6 = VIH) operation.
The third cycle data is 60h. After the third cycle, the system can continue to lock
or unlock additional sectors in the same bank or exit the sector lock/unlock sequence by writing the reset command (F0h).
It is not possible to read from the bank selected for sector lock/unlock operations.
To enable such read operations, write the reset command.
Note that the last two outermost boot sectors can be locked by taking the WP#
signal to VIL.
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Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read
mode. Address bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device
ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins (prior to the third cycle). This resets the bank to which the system was writing to the read mode. If the program
command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once
programming begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to the read mode. If a bank entered the autoselect mode while
in the Erase Suspend mode, writing the reset command returns that bank to the
erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command
returns the banks to the read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
The reset command is used to exit the sector lock/unlock sequence. This command is required before reading from the bank selected for sector lock/unlock
operations.
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected.
Table 13, “Command Definitions,” on page 37 shows the address and data requirements. The autoselect command sequence may be written to an address
within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or
erasing in the other bank.
The autoselect command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. No subsequent
data will be made available if the autoselect data is read in synchronous mode.
The system may read at any address within the same bank any number of times
without initiating another autoselect command sequence. The following table describes the address requirements for the various autoselect functions, and the
resulting data. BA represents the bank address, and SA represents the sector address. The device ID is read in three cycles.
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Description
S h e e t
Address
Read Data
Manufacturer ID
(BA) + 00h
0001h
Device ID, Word 1
(BA) + 01h
227Eh
Device ID, Word 2
(BA) + 0Eh
2204h (1.8 V VIO, top boot),
2224h (1.8 V VIO, bottom boot),
2214h (3.0 V VIO, top boot),
2234h (3.0 V VIO, bottom boot)
Device ID, Word 3
(BA) + 0Fh
2201h
Sector Block
Lock/Unlock
(SA) + 02h
0001 (locked),
0000 (unlocked)
Handshaking
(BA) + 03h
43h (reduced wait-state),
42h (standard)
The system must write the reset command to return to the read mode (or erasesuspend-read mode if the bank was previously in Erase Suspend).
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the
Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin. Table 13 shows the address and
data requirements for the program command sequence.
When the Embedded Program algorithm is complete, that bank then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by monitoring DQ7 or DQ6/DQ2. Refer to the
“Write Operation Status” section on page 38 section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank
has returned to the read mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause that
bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bit to indicate the operation was successful. However, a succeeding read will show that the data is still
“0.” Only erase operations can convert a “0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to primarily program to a bank
faster than using the standard program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the unlock bypass command, 20h. That bank
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in
this sequence contains the unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required
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in the standard program command sequence, resulting in faster total programming time. The host system may also initiate the chip erase and sector erase
sequences in the unlock bypass mode. The erase command sequences are four
cycles in length instead of six cycles. Table 13, “Command Definitions,” on
page 37 shows the requirements for the unlock bypass command sequences.
During the unlock bypass mode, only the Unlock Bypass Program, Unlock Bypass
Sector Erase, Unlock Bypass Chip Erase, and Unlock Bypass Reset commands are
valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need only contain the data 00h. The
bank then returns to the read mode.
The device offers accelerated program operations through the ACC input. When
the system asserts VID on this input, the device automatically enters the Unlock
Bypass mode. The system may then write the two-cycle Unlock Bypass program
command sequence. The device uses the higher voltage on the ACC input to accelerate the operation.
Figure 2 illustrates the algorithm for the program operation. Refer to the Erase/
Program Operations table in the AC Characteristics section for parameters, and
Figure 21, “Asynchronous Program Operation Timings,” on page 59 for timing
diagrams.
START
Write Erase
Command Sequence
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 13 for erase command sequence.
2. See the section on DQ3 for information on the sector erase timer.
Figure 2.
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Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 13, “Command Definitions,” on page 37
shows the address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7 or DQ6/DQ2. Refer to the “Write Operation
Status” section for information on these status bits.
Any commands written during the chip erase operation are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that
occurs, the chip erase command sequence should be reinitiated once that bank
has returned to reading array data, to ensure data integrity.
The host system may also initiate the chip erase command sequence while the
device is in the unlock bypass mode. The command sequence is two cycles in
length instead of six cycles. See Table 13 for details on the unlock bypass command sequences.
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations table in the AC Characteristics section for parameters and timing
diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table 13 shows the address
and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory
for an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than
35 µs occurs. During the time-out period, additional sector addresses and sector
erase commands may be written. Loading the sector erase buffer may be done
in any sequence, and the number of sectors may be from one sector to all sectors.
The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded
time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase command is written. Any
command other than Sector Erase or Erase Suspend during the time-out period
resets that bank to the read mode. The system must rewrite the command sequence and any additional addresses and commands.
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The system can monitor DQ3 to determine if the sector erase timer has timed out
(See “DQ3: Sector Erase Timer” section on page 43.). The time-out begins from
the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading
array data and addresses are no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read data from the non-erasing
bank. The system can determine the status of the erase operation by reading
DQ7 or DQ6/DQ2 in the erasing bank. Refer to the “Write Operation Status” section on page 38 section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
The host system may also initiate the sector erase command sequence while the
device is in the unlock bypass mode. The command sequence is four cycles cycles
in length instead of six cycles.
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations table in the AC Characteristics section for parameters and timing
diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the minimum 50
µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded
Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a maximum of 35 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase timeout, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the
erase-suspend-read mode. The system can determine the status of the program
operation using the DQ7 or DQ6 status bits, just as in the standard program operation. Refer to the “Write Operation Status” section for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the “Autoselect Functions” section on page 16 and
“Autoselect Command Sequence” section on page 31 sections for details.
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To resume the sector erase operation, the system must write the Erase Resume
command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip has resumed erasing.
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
No
Increment Address
Last Address?
Yes
Programming
Completed
Note: See Table 13 for program command sequence.
Figure 3.
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Command Definitions
Command Sequence
(Notes)
Cycles
Table 13. Command Definitions
Bus Cycles (Notes 1–5)
First
Second
Addr Data Addr Data
Third
Fourth
Fifth
Addr
Data
Addr
Data
1
RA
Reset (7)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
(BA)555
90
(BA)X00
0001
Device ID (9)
6
555
AA
2AA
55
(BA)555
90
(BA)X01
227E
Sector Lock Verify (10)
4
555
AA
2AA
55
(SA)555
90
(SA)X02
0000/0001
Handshaking Option (11)
4
555
AA
2AA
55
(BA)555
90
(BA)X03
0042/0043
PA
Data
Autoselect (8)
Asynchronous Read (6)
Addr
Data
Sixth
Addr
Data
(BA)X
(BA)
(Note 9)
0E
X0F
2201
RD
Program
4
555
AA
2AA
55
555
A0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (12)
2
XXX
A0
PA
PD
Unlock Bypass Sector Erase (12)
2
XXX
80
SA
30
Unlock Bypass Chip Erase (12)
2
XXX
80
XXX
10
Unlock Bypass Reset (13)
2
BA
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (7, 14)
1
BA
B0
Erase Resume (15)
1
BA
30
Sector Lock/Unlock (7)
3
BA
60
BA
60
SLA
60
Set Burst Mode
Configuration Register (16)
3
555
AA
2AA
55
(CR)555
C0
CFI Query (17)
1
55
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the rising edge of the AVD# pulse.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# pulse.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A21–A14 uniquely select any sector.
BA = Address of the bank (A21, A20) that is being switched to
Autoselect mode, is in bypass mode, is being erased, or is being
selected for sector lock/unlock.
SLA = Address of the sector to be locked. Set sector address (SA) and
either A6 = 1 for unlocked or A6 = 0 for locked.
CR = Configuration Register address bits A19–A12.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
Unless otherwise noted, address bits A21–A12 are don’t cares.
No unlock or command cycles required when bank is reading
array data.
The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information) or
performing sector lock/unlock.
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address. See the
Autoselect Command Sequence section for more information.
The data in the fifth cycle is 2204h for 1.8 V VIO, and 2214h for
3.0 V VIO (top boot); 2224h for 1.8 V VIO, and 2234h for 3.0 V
VIO (bottom boot).
May 9, 2006 25903C2
10. The data is 0000h for an unlocked sector and 0001h for a locked
sector
11. The data is 0043h for handshaking provided and 0042h for
handshaking not provided.
12. The Unlock Bypass command sequence is required prior to this
command sequence.
13. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
15. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
16. See “Set Burst Mode Configuration Register Command
Sequence” for details.
17. Command is valid when device is ready to read array data or
when device is in autoselect mode.
Am29BDS640G
37
D a t a
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Write Operation Status
The device provides several bits to determine the status of a program or erase
operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 15, “Write Operation Status,”
on page 43 and the following subsections describe the function of these bits. DQ7
and DQ6 each offers a method for determining whether a program or erase operation is complete or in progress.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Program or Erase algorithm is in progress or completed, or whether a bank is in
Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse
in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then that bank returns to the read mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.
When the Embedded Erase algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide
an address within any of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected. However, if the system reads DQ7 at an address within
a protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7
may change asynchronously with DQ6–DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to
valid data on DQ7. Depending on when the system samples the DQ7 output, it
may read the status or valid data. Even if the device has completed the program
or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 may
be still invalid. Valid data on DQ7–DQ0 will appear on successive read cycles.
Table 15 shows the outputs for Data# Polling on DQ7. Figure 3 shows the Data#
Polling
algorithm.
Figure 27,
“Data#
Polling
Timings
(During Embedded Algorithm),” on page 65 in the AC Characteristics section
shows the Data# Polling timing diagram.
38
Am29BDS640G
25903C2 May 9, 2006
D a t a
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START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
address is any sector address within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Figure 4.
May 9, 2006 25903C2
Data# Polling Algorithm
Am29BDS640G
39
D a t a
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RDY: Ready
The RDY is a dedicated output that, by default, indicates (when at logic low) the
system should wait 1 clock cycle before expecting the next word of data. Using
the RDY Configuration Command Sequence, RDY can be set so that a logic low
indicates the system should wait 2 clock cycles before expecting valid data.
RDY functions only while reading data in burst mode. The following conditions
cause the RDY output to be low: during the initial access (in burst mode), and
after the boundary that occurs every 64 words beginning with the 64th address,
3Fh.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm
is in progress or complete, or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address in the same bank, and is valid
after the rising edge of the final WE# pulse in the command sequence (prior to
the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. When the operation is complete, DQ6
stops toggling.
After an erase command sequence is written, if all sectors selected for erasing
are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 ms after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling
once the Embedded Program algorithm is complete.
See the following for additional information: Figure 4 (toggle bit flowchart), DQ6:
To g g l e B i t I ( d e s c r i p t i o n ) , F i g u r e 2 8 , “ To g g l e B i t T i m i n g s
(During Embedded Algorithm),” on page 65 (toggle bit timing diagram), and
Table 14, “DQ6 and DQ2 Indications,” on page 42.
40
Am29BDS640G
25903C2 May 9, 2006
D a t a
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START
Read DQ7–DQ0
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle
bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2
for more information.
Figure 5.
Toggle Bit Algorithm
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have
been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but cannot distinguish which
May 9, 2006 25903C2
Am29BDS640G
41
D a t a
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sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 14 to compare outputs for DQ2 and DQ6.
See the following for additional information: Figure 5, “Toggle Bit Algorithm,” on
page 41, See “DQ6: Toggle Bit I” on page 40., Figure 28, “Toggle Bit Timings
(During Embedded Algorithm),” on page 65, and Table 14, “DQ6 and DQ2 Indications,” on page 42.
Table 14.
DQ6 and DQ2 Indications
If device is
and the system reads
then DQ6
and DQ2
programming,
at any address,
toggles,
does not toggle.
at an address within a sector
selected for erasure,
toggles,
also toggles.
at an address within sectors not
selected for erasure,
toggles,
does not toggle.
at an address within a sector
selected for erasure,
does not toggle,
toggles.
at an address within sectors not
selected for erasure,
returns array data,
returns array data. The system can read
from any sector not selected for erasure.
at any address,
toggles,
is not applicable.
actively erasing,
erase suspended,
programming in
erase suspend
Reading Toggle Bits DQ6/DQ2
Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the system would note and
store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit with the first. If the toggle
bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the
device did not completed the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that
the program or erase cycle was not successfully completed.
42
Am29BDS640G
25903C2 May 9, 2006
D a t a
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The device may output a “1” on DQ5 if the system tries to program a “1” to a
location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the device halts the operation,
and when the timing limit has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write the reset command to return
to the read mode (or to the erase-suspend-read mode if a bank was previously
in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional sectors are selected for erasure,
the entire time-out also applies after each additional sector erase command.
When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the
time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the
Sector Erase Command Sequence section.
After the sector erase command is written, the system should read the status of
DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase
algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the
system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 15 shows the status of DQ3 relative to the other status bits.
Table 15.
Standard
Mode
Write Operation Status
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
1
No toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
Erase-SuspendRead (Note 4)
Erase
Suspend
Mode
Erase
Suspended Sector
Non-Erase Suspended
Sector
Erase-Suspend-Program
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded
Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank.
4. The system may read either asynchronously or synchronously (burst) while in erase suspend. RDY will function exactly as in non-erase-suspended mode.
May 9, 2006 25903C2
Am29BDS640G
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Absolute Maximum Ratings
Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground:
All Inputs and I/Os except as noted below (Note 1) . . . . –0.5 V to VIO + 0.5 V
VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +2.5 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +3.5 V
ACC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.5 V
Output Short Circuit Current (Note 3)100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs
or I/Os may undershoot VSS to –2.0 V for periods of up to 20 ns during voltage
transitions inputs might overshoot to VCC +0.5 V for periods up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage
transitions outputs may overshoot to VCC + 2.0 V for periods up to 20 ns. See
Figure 7.
2. No more than one output may be shorted to ground at a time. Duration of the
short circuit should not be greater than one second.
3. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
20 ns
20 ns
20 ns
VCC
+2.0 V
VCC
+0.5 V
+0.8 V
–0.5 V
–2.0 V
2.0 V
20 ns
20 ns
Figure 6. Maximum Negative
Overshoot Waveform
20 ns
Figure 7. Maximum Positive
Overshoot Waveform
Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC Supply Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . .+1.65 V to +1.95 V
VIO Supply Voltages:
VIO ≤ VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.65 V to +1.95 V
VIO > VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.7 to +3.15 V
Note: Operating ranges define those limits between which the functionality of the device is guaranteed.
44
Am29BDS640G
25903C2 May 9, 2006
D a t a
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DC Characteristics
CMOS Compatible
Parameter Description
Test Conditions (Note 1,2)
Min
Typ.
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
10
20
mA
8
16
mA
VIO = 1.8 V, OE# = VIH
0.2
10
µA
VIO = 3.0 V, OE# = VIH
0.2
10
µA
5 MHz
12
16
mA
1 MHz
3.5
5
mA
CE# = VIL, OE# = VIH, WE# = VIH,
ICCB
VCC Active Burst Read Current
54 MHz
CE# = VIL, OE# = VIH, WE# = VIH,
40 MHz
IIO
VIO Non-active Output
ICC1
VCC Active Asynchronous Read
Current (Note 3)
ICC2
VCC Active Write Current (Note 4) CE# = VIL, OE# = VIH, VPP = VIH
15
40
mA
ICC3
VCC Standby Current (Note 5)
CE# = RESET# = VCC ± 0.2 V
0.2
10
µA
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
0.2
10
µA
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIH
25
60
mA
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min,
VIO = VIO min
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min,
VIO = VIO min
VID
Voltage for Accelerated Program
11.5
12.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V
CE# = VIL, OE# = VIH,
WE# = VIH
VIO = 1.8 V
–0.5
0.2
V
VIO = 3.0 V
–0.5
0.4
V
VIO = 1.8 V
VIO – 0.2
VIO + 0.2
V
VIO = 3.0 V
VIO – 0.4
VIO + 0.4
V
0.1
V
VIO – 0.1
V
Notes:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. All ICC specifications are tested with VIO = VCC.
3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal
to ICC3.
May 9, 2006 25903C2
Am29BDS640G
45
D a t a
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Test Conditions
Table 16.
Test Specifications
Test Condition
Device
Under
Test
All Speed Options Unit
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–VIO
V
Input timing measurement
reference levels
VIO/2
V
Output timing measurement
reference levels
VIO/2
V
Input Pulse Levels
CL
Note: Diodes are IN3064 or equivalent
Figure 8.
Test Setup
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Switching Waveforms
All Inputs and Outputs
VIO
Input
VIO/2
Measurement Level
VIO/2
Output
0.0 V
Figure 9.
46
Input Waveforms and Measurement Levels
Am29BDS640G
25903C2 May 9, 2006
D a t a
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AC Characteristics
VCC and VIO Power-up
Parameter
Description
Test Setup
Speed
Unit
tVCS
VCC Setup Time
Min
50
µs
tVIOS
VIO Setup Time
Min
50
µs
tRSTH
RESET# Low Hold Time
Min
50
µs
tVCS
VCC
tVIOS
VIO
tRSTH
RESET#
Figure 10.
May 9, 2006 25903C2
VCC and VIO Power-up Diagram
Am29BDS640G
47
D a t a
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AC Characteristics
Synchronous/Burst Read
Parameter
JEDEC
98
78
93
73
(40 MHz) (54 MHz) (40 MHz) (54 MHz)
Standard Description
tIACC
Latency (Even Address in Handshake
Mode)
Max
Parameter
JEDEC
95
87.5
95
88
98, 99
78, 79
93, 94
73, 74
(40 MHz) (54 MHz) (40 MHz) (54 MHz)
Standard Description
Unit
ns
Unit
tIACC
Latency—(Non-Handshake or Odd
Address in Handshake mode)
Max
120
106
120
106.5
ns
tBACC
Burst Access Time Valid Clock to
Output Delay
Max
20
13.5
20
14
ns
tACS
Address Setup Time to CLK (See Note)
Min
5
ns
tACH
Address Hold Time from CLK (See
Note)
Min
7
ns
tBDH
Data Hold Time from Next Clock Cycle
Max
4
ns
tOE
Output Enable to Output Valid
Max
tCEZ
Chip Enable to High Z
Max
tOEZ
Output Enable to High Z
Max
tCES
CE# Setup Time to CLK
Min
tRDYS
RDY Setup Time to CLK
Min
tRACC
Ready Access Time from CLK
Max
tAAS
Address Setup Time to AVD# (See
Note)
Min
5
ns
tAAH
Address Hold Time to AVD# (See Note)
Min
7
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
tAVC
AVD# Low to CLK
Min
5
ns
tAVD
AVD# Pulse
Min
12
ns
tACC
Access Time
Max
70
ns
20
13.5
20
14
ns
10
10.5
10.5
ns
10
10.5
10.5
ns
5
5
20
13.5
ns
4.5
4.5
ns
20
14
ns
Note: Addresses are latched on the first of either the active edge of CLK or the rising edge of AVD#.
48
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
7 cycles for initial access shown.
tCEZ
tCES
CE#
1
2
3
4
5
6
7
CLK
tAVC
AVD#
tAVD
tACS
A21-A0
tBDH
Aa
tBACC
tACH
Hi-Z
DQ15-DQ0
tIACC
Da
tACC
Da + 1
Da + n
tOEZ
OE#
RDY
Hi-Z
tRACC
tOE
Hi-Z
tRDYS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed
from two cycles to seven cycles.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 11.
May 9, 2006 25903C2
CLK Synchronous Burst Mode Read
(rising active CLK)
Am29BDS640G
49
D a t a
S h e e t
AC Characteristics
4 cycles for initial access shown.
tCEZ
tCES
CE#
1
2
3
4
5
CLK
tAVC
AVD#
tAVD
tACS
A21-A0
tBDH
Aa
tBACC
tACH
Hi-Z
DQ15-DQ0
tIACC
tACC
Da
Da + 1
Da + n
tOEZ
OE#
tRACC
tOE
Hi-Z
Hi-Z
RDY
tRDYS
Notes:
1. Figure shows total number of wait states set to four cycles. The total number of wait states can be programmed from
two cycles to seven cycles. Clock is set for active falling edge.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
4. In the Burst Mode Configuration Register, A17 = 0.
Figure 12.
50
CLK Synchronous Burst Mode Read
(Falling Active Clock)
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
7 cycles for initial access shown.
tCEZ
tCAS
CE#
1
2
3
4
5
6
7
CLK
tAVC
AVD#
tAVD
tAAS
A21-A0
tBDH
Aa
tBACC
tAAH
Hi-Z
DQ15-DQ0
tIACC
Da
Da + 1
Da + n
tACC
tOEZ
OE#
RDY
tRACC
tOE
Hi-Z
Hi-Z
tRDYS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed
from two cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
4. In the Burst Mode Configuration Register, A17 = 1.
Figure 13.
Synchronous Burst Mode Read
7 cycles for initial access shown.
tCES
18.5 ns typ. (54 MHz)
CE#
1
2
3
4
5
6
7
CLK
tAVDS
AVD#
tAVD
tACS
A21-A0
tBDH
Aa
tBACC
tACH
DQ15-DQ0
tIACC
D6
D7
D0
D1
D5
D6
tACC
OE#
tOE
RDY
tRACC
Hi-Z
tRDYS
Note: Figure assumes 7 wait states for initial access, 54 MHz clock, and automatic detect synchronous read. D0–D7 in
data waveform indicate the order of data within a given 8-word address range, from lowest to highest. Data will wrap
around within the 8 words non-stop unless the RESET# is asserted low, or AVD# latches in another address. Starting
address in figure is the 7th address in range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The
Set Configuration Register command sequence has been written with A18=1; device will output RDY with valid data.
Figure 14.
May 9, 2006 25903C2
8-word Linear Burst with Wrap Around
Am29BDS640G
51
D a t a
S h e e t
AC Characteristics
6 wait cycles for initial access shown.
tCES
tCEZ
25 ns typ. (40 MHz)
CE#
1
2
3
4
5
6
CLK
tAVDS
AVD#
tAVD
tACS
A21-A0
tBDH
Aa
tBACC
tACH
Hi-Z
DQ15-DQ0
tIACC
D0
tACC
D1
D2
Da + n
tOEZ
tRACC
OE#
D3
tOE
RDY
Hi-Z
Hi-Z
tRDYS
Note: Figure assumes 6 wait states for initial access, 40 MHz clock, and synchronous read. The Set Configuration Register command sequence has been written with A18=0; device will output RDY one cycle before valid data.
Figure 15.
52
Burst with RDY Set One Cycle Before Data
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
7 cycles for initial access shown.
tCEZ
tCAS
CE#
1
2
3
4
5
6
7
CLK
tAVC
AVD#
tAVD
tAAS
A21-A0
tBDH
Aa
tBACC
tAAH
Hi-Z
DQ15-DQ0
tIACC
Da
tACC
Da + 1
Da + n
tOEZ
OE#
tRACC
tOE
RDY
Hi-Z
Hi-Z
tRDYS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed
from two cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
4. This waveform represents a synchronous burst mode, the device will also operate in reduced wait-state
handshaking under a CLK synchronous burst mode.
Figure 16. Reduced Wait-State Handshaking Burst
Mode Read Starting at an Even Address
May 9, 2006 25903C2
Am29BDS640G
53
D a t a
S h e e t
AC Characteristics
7 cycles for initial access shown.
tCEZ
tCAS
CE#
1
2
3
4
5
6
7
8
CLK
tAVC
AVD#
tAVD
tAAS
A21-A0
tBDH
Aa
tBACC
tAAH
Hi-Z
DQ15-DQ0
tIACC
tACC
Da
Da + 1
Da + n
tOEZ
OE#
tRACC
tOE
RDY
Hi-Z
Hi-Z
tRDYS
Figure 17.
Reduced Wait-State Handshaking Burst Mode Read
Starting at an Odd Address
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed
from two cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
4. This waveform represents a synchronous burst mode, the device will also operate in reduced wait-state
handshaking under a CLK synchronous burst mode.
54
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Asynchronous Read
Parameter
JEDEC
Standard Description
D3, D4
D8, D9
C3, C4
C8, C9
Unit
tCE
Access Time from CE# Low
Max
70
90
ns
tACC
Asynchronous Access Time (Note 1)
Max
70
90
ns
tAVDP
AVD# Low Time
Min
12
ns
tAAVDS
Address Setup Time to Rising Edge of AVD
Min
5
ns
tAAVDH
Address Hold Time from Rising Edge of AVD
Min
7
ns
tOE
Output Enable to Output Valid
Max
Output Enable Hold
Time
Read
Min
0
ns
tOEH
Toggle and
Data# Polling
Min
10
ns
tOEZ
Output Enable to High Z (Note 2)
Max
tCAS
CE# Setup Time to AVD#
Min
13.5
20
10
10.5
0
ns
ns
ns
Notes:
1. Asynchronous Access Time is from the last of either stable addresses or the falling edge of AVD#.
2. Not 100% tested.
CE#
tOE
OE#
tOEH
WE#
tCE
tOEZ
DQ15-DQ0
Valid RD
tACC
RA
A21-A0
tAAVDH
tCAS
AVD#
tAVDP
tAAVDS
Note: RA = Read Address, RD = Read Data.
Figure 18.
May 9, 2006 25903C2
Asynchronous Mode Read with Latched Addresses
Am29BDS640G
55
D a t a
S h e e t
AC Characteristics
CE#
tOE
OE#
tOEH
WE#
tCE
DQ15-DQ0
tOEZ
Valid RD
tACC
RA
A21-A0
AVD#
Note: RA = Read Address, RD = Read Data.
Figure 19.
56
Asynchronous Mode Read
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed
Options
Unit
tReadyw
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
35
μs
tReady
RESET# Pin Low (NOT During Embedded Algorithms)
to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
20
μs
Note: Not 100% tested.
CE#, OE#
tRH
RESET#
tRP
tReadyw
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
CE#, OE#
tReady
RESET#
tRP
Figure 20.
May 9, 2006 25903C2
Reset Timings
Am29BDS640G
57
D a t a
S h e e t
AC Characteristics
Erase/Program Operations
Parameter
Description
All
Speed
Options
Unit
80
ns
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 1)
tAVWL
tAS
Address Setup Time
(Note 2)
Synchronous
tWLAX
tAH
Address Hold Time
(Note 2)
Synchronous
tACS
Address Setup Time to CLK (Note 2)
Min
5
ns
tACH
Address Hold Time to CLK (Note 2)
Min
7
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Asynchronous
Asynchronous
Min
Min
Min
5
ns
0
7
ns
45
Read Recovery Time Before Write
Min
0
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 3)
Typ
8
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 3)
Typ
2.5
µs
tWHWH2
tWHWH2
tELWL
Sector Erase Operation (Notes 3, 4)
Chip Erase Operation (Notes 3, 4)
Typ
0.2
26.8
sec
tVID
VACC Rise and Fall Time
Min
500
ns
tVIDS
VACC Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs
tCSW1
Clock Setup Time to WE# (Asynchronous)
Min
5
ns
tCSW2
Clock Setup Time to WE# (Synchronous)
Min
1
ns
tCHW
Clock Hold Time from WE#
Max
1
ns
CE# Setup Time to WE#
Min
0
ns
tCS
tAVSW
AVD# Setup Time to WE#
Min
5
ns
tAVHW
AVD# Hold Time to WE#
Min
5
ns
tAVHC
AVD# Hold Time to CLK
Min
5
ns
tAVDP
AVD# Low Time
Min
12
ns
Notes:
1. Not 100% tested.
2. In asynchronous timing, addresses are latched on the falling edge of WE#. In synchronous mode, addresses are latched on the
first of either the rising edge of AVD# or the active edge of CLK.
3. See the “Erase and Programming Performance” section for more information.
4. Does not include the preprogramming time.
58
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Program Command Sequence (last two cycles)
tCSW1
Read Status Data
VIH
CLK
VIL
tAVSW
tAVHW
AVD
tAVDP
tAS
tAH
Addresses
555h
VA
PA
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tWHWH1
tCS
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode
Configuration Register.
Figure 21.
May 9, 2006 25903C2
Asynchronous Program Operation Timings
Am29BDS640G
59
D a t a
S h e e t
AC Characteristics
Program Command Sequence (last two cycles)
tCHW
VIH
CLK
Read Status Data
VIL
tAVSW
tAVHW
AVD
tAVDP
tAS
tAH
Addresses
555h
VA
PA
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tWHWH1
tCS
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode
Configuration Register.
Figure 22.
60
Alternate Asynchronous Program Operation Timings
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Program Command Sequence (last two cycles)
Read Status Data
CLK
tACS
tAS
AVD
tAH
tAVDP
Addresses
VA
PA
555h
Data
In
Progress
PD
A0h
VA
Complete
tDS
tDH
tCAS
CE#
tCH
tAVSW
OE#
tWP
WE#
tWHWH1
tWPH
tCSW2
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CS# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode
Configuration Register.
7. CLK must not have an active edge while WE# is at VIL.
8. AVD# must toggle during command sequence unlock cycles.
Figure 23.
May 9, 2006 25903C2
Synchronous Program Operation Timings
Am29BDS640G
61
D a t a
S h e e t
AC Characteristics
Program Command Sequence (last two cycles)
Read Status Data
tAVHC
CLK
tACS
tAS
AVD
(Note 8)
tAH
tAVDP
Addresses
VA
PA
555h
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
tCAS
CE#
OE#
tCH
tCSW2
tWP
WE#
tWHWH1
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CS# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode
Configuration Register.
7. AVD# must toggle during command sequence unlock cycles.
8. tAH = 45 ns.
9. CLK must not have an active edge while WE# is at VIL.
Figure 24.
62
Alternate Synchronous Program Operation Timings
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Erase Command Sequence (last two cycles)
VIH
Read Status Data
CLK
VIL
tAVDP
AVD#
tAH
tAS
Addresses
555h for
chip erase
Data
VA
SA
2AAh
55h
VA
10h for
chip erase
In
Progress
30h
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tWHWH2
tWPH
tWC
tVCS
VCC
Figure 25.
Chip/Sector Erase Command Sequence
Notes:
1. SA is the sector address for Sector Erase.
2. Address bits A21–A12 are don’t cares during unlock cycles in the command sequence.
May 9, 2006 25903C2
Am29BDS640G
63
D a t a
S h e e t
AC Characteristics
CE#
AVD#
WE#
Addresses
PA
Data
Don't Care
OE#
ACC
1 ms
A0h
Don't Care
PD
Don't Care
tVIDS
VID
tVID
VIL or VIH
Note: Use setup and hold times from conventional program operation.
Figure 26.
64
Accelerated Unlock Bypass Programming Timing
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Addresses
VA
VA
Data
Status Data
Status Data
Notes:
1. Status reads in figure are shown as asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is
complete, and Data# Polling will output true data.
3. AVD# must toggle between data reads.
Figure 27.
Data# Polling Timings (During Embedded Algorithm)
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Addresses
VA
VA
Data
Status Data
Status Data
Notes:
1. Status reads in figure are shown as asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is
complete, the toggle bits will stop toggling.
3. AVD# must toggle between data reads.
Figure 28.
May 9, 2006 25903C2
Toggle Bit Timings (During Embedded Algorithm)
Am29BDS640G
65
D a t a
S h e e t
AC Characteristics
CE#
CLK
AVD#
Addresses
VA
VA
OE#
tIACC
tIACC
Data
Status Data
Status Data
RDY
Notes:
1. The timings are similar to synchronous read timings.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is
complete, the toggle bits will stop toggling.
3. RDY is active with data (A18 = 0 in the Burst Mode Configuration Register). When A18 = 1 in the Burst Mode
Configuration Register, RDY is active one clock cycle before data.
4. AVD# must toggle between data reads.
Figure 29.
66
Synchronous Data Polling Timings/
Toggle Bit Timings
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Address boundary occurs every 64 words, beginning at address
00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing.
C60
C61
C62
3C
3D
3E
C63
C63
C63
C64
C65
C66
C67
3F
3F
3F
40
41
42
43
CLK
Address (hex)
AVD#
(stays high)
tRACC
tRACC
RDY
(Note 1)
latency
tRACC
tRACC
RDY
Data
OE#,
CE#
(Note 2)
latency
D60
D61
D62
D63
D64
D65
D66
D67
(stays low)
Notes:
1. RDY active with data (A18 = 1 in the Burst Mode Configuration Register).
2. RDY active one clock cycle before data (A18 = 0 in the Burst Mode Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device not
crossing a bank in the process of performing an erase or program.
Figure 30.
May 9, 2006 25903C2
Latency with Boundary Crossing
Am29BDS640G
67
D a t a
S h e e t
AC Characteristics
Address boundary occurs every 64 words, beginning at address
00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing
C60
C61
C62
3C
3D
3E
C63
C63
C63
C64
3F
3F
3F
40
CLK
Address (hex)
AVD#
(stays high)
tRACC
RDY
(Note 1)
latency
tRACC
tRACC
RDY
Data
OE#,
CE#
tRACC
(Note 2)
latency
D60
D61
D62
D63
Invalid
Read Status
(stays low)
Notes:
1. RDY active with data (A18 = 1 in the Burst Mode Configuration Register).
2. RDY active one clock cycle before data (A18 = 0 in the Burst Mode Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device
crossing a bank in the process of performing an erase or program.
Figure 31.
68
Latency with Boundary Crossing
into Program/Erase Bank
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
AC Characteristics
Data
D0
D1
Rising edge of next clock cycle
following last wait state triggers
next burst data
AVD#
total number of clock cycles
following AVD# falling edge
OE#
1
2
3
0
1
4
5
6
7
3
4
5
CLK
2
number of clock cycles
programmed
Note:
A14,
A14,
A14,
A14,
A14,
A14,
A13,
A13,
A13,
A13,
A13,
A13,
A12
A12
A12
A12
A12
A12
=
=
=
=
=
=
“101”
“100”
“011”
“010”
“001”
“000”
⇒ 5 programmed, 7 total
⇒ 4 programmed, 6 total
⇒ 3 programmed, 5 total
⇒ 2 programmed, 4 total
⇒ 1 programmed, 3 total
⇒ 0 programmed, 2 total
Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”.
Figure 32.
May 9, 2006 25903C2
Example of Wait States Insertion (Standard Handshaking Device)
Am29BDS640G
69
D a t a
S h e e t
AC Characteristics
Read status (at least two cycles) in same bank
and/or array data from other bank
Last Cycle in
Program or
Sector Erase
Command Sequence
tWC
tRC
Begin another
write or program
command sequence
tRC
tWC
CE#
OE#
tOE
tOEH
tGHWL
WE#
tWPH
Data
tWP
tDS
tOEZ
tACC
tOEH
tDH
RD
RD
PD/30h
AAh
tSR/W
Addresses
PA/SA
RA
RA
555h
tAS
AVD#
tAH
Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while
checking the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure
valid information.
Figure 33. Back-to-Back Read/Write Cycle Timings
70
Am29BDS640G
25903C2 May 9, 2006
D a t a
S h e e t
Erase and Programming Performance
Parameter
Sector Erase Time
Typ (Note 1)
Max (Note 2)
32 Kword
0.4
5
8 Kword
0.4
5
Chip Erase Time
Unit
s
54
Word Programming Time
Comments
Excludes 00h programming
prior to erasure (Note 4)
s
11.5
210
µs
Accelerated Word Programming Time
4
120
µs
Chip Programming Time (Note 3)
48
144
s
Accelerated Chip Programming Time
16
48
s
Excludes system level
overhead (Note 5)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 13 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
FBGA Ball Capacitance
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
3. Fortified BGA ball capacitance TBD.
Data Retention
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
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Physical Dimensions
FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)
11 x 12 mm Package
0.20 (4X)
D1
A
D
eD
8
eE
7
6
7
SE
5
E
E1
4
3
2
1
M
K
J
H
G
F
E
D
C
B
A
A1 CORNER
7
B
A1 CORNER INDEX MARK 10
L
6 NXOb
SD
φ0.08 M Z
φ0.15 M Z A B
TOP VIEW
BOTTOM VIEW
0.25 Z
A2
A
A1
SEATING PLANE
Z
0.08 Z
SIDE VIEW
NOTES:
PACKAGE
1.
DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D"
DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE
IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER
BALLS.
FBE 080
JEDEC
N/A
10.95 mm x 11.95 mm
PACKAGE
MIN. NOM. MAX.
SYMBOL
NOTE
A
---
---
A1
0.20
---
---
BALL HEIGHT
A2
0.84
---
0.94
BODY THICKNESS
1.20
OVERALL THICKNESS
D
11.95 BSC.
BODY SIZE
E
10.95 BSC.
8.80 BSC.
BODY SIZE
BALL FOOTPRINT
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM Z.
5.60 BSC.
12
BALL FOOTPRINT
ROW MATRIX SIZE D DIRECTION
7
ME
8
ROW MATRIX SIZE E DIRECTION
N
b
80
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER
OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D
OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000.
D1
E1
MD
0.25
0.30
TOTAL BALL COUNT
0.35
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
A3-A6, B3-B6,
L3-L6, M3-M6
DEPOPULATED SOLDER BALLS
8.
"+" IN THE PACKAGE DRAWING INDICATES THE THEORETICAL
CENTER OF DEPOPULATED BALLS.
E
PACKAGE OUTLINE TYPE
9
FOR PACKAGE THICKNESS, "A" IS THE CONTROLLING DIMENSION.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, INK MARK,
METALLIZED MARKINGS INDENTION OR OTHER MEANS.
3150\38.9G
Note: BSC is an ANSI standard for Basic Space Centering.
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Revision Summary
Revision A (February 13, 2002)
Initial release.
Revision A+1 (February 19, 2002)
Automatic Sleep Mode
Clarified description to indicate that sleep mode is activated when the first CLK
edge occurs after tACC.
Figure 20, Asynchronous Program Operation Timings
Modified to show that CLK is don’t care prior to AVD# going low, and that AVD#
must not be low before CE# transitions low.
Revision A+2 (February 27, 2002)
Figure 21, Asynchronous Program Operation Timings
Extended don’t care section of CLK to falling edge of WE#.
Revision A+3 (May 9, 2002)
Requirements for Synchronous (Burst) Read Operation
Shifted address, clock, and data cycle references in third paragraph up by one.
Table 4, System Interface String
Corrected data for address 23h.
Table 9, Initial Access Cycles vs. Frequency
Added table.
Autoselect Command Sequence
Added bottom boot device IDs to table.
Table 13, Command Definitions
Added bottom boot device IDs to table.
RDY: Ready
Corrected address boundary from 63rd word/3Eh to 64th word/3Fh.
DC Characteristics
Added VIO = VIO min to test conditions for VOL and VOH in table.
Erase/Program Operations table
Added specifications for parameters tCSW1, tCSW2, tCHW, tAHC.
Figures 21, 23
Added note to indicate AVD# must toggle during command sequence unlock cycles. Added tCSW1 to 21.
Figures 22, 24
Added figures, which show different timings between addresses, CLK, WE#, and
AVD#.
Figures 25, 27, 28
Added note to indicate AVD# must toggle during data reads.
Figures 30, 31
Shifted address, clock, and data cycle counts up by one.
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Revision A + 4 (July 26, 2002)
Table 1, Device Bus Operations
Changed Synchronous Write to rising edge of CLK.
Writing Commands/Command Sequences
Added CLK as part of the asynchronous write operation system drive. Added VCC
and VIO Power-up and Power-down Sequencing section.
AC Characteristics
Changed tCHW erase/program time from Min to Max.
Figure 20, Asynchronous Program Operation Timings
Changed tCSW1 reference to WE# from AVD#.
Figure 21, Alternate Asynchronous Program Operation Timings
Changed to show CLK low after tCHW time.
Figure 22, Synchronous Program Operation Timings
Removed tACH. Changed tAHW to tAVSW and added tCSW2.
Figure 23, Alternate Synchronous Program Operation Timings
Changed tAVCH to tAVHC. Removed tACH.
DC Characteristics, CMOS Compatible
Corrected ICCB OE# = VIL to = VIH; switched Typ. and Max. values.
Revision B (October 31, 2002)
Global
Renamed Handshaking Enabled to Reduced Wait-State Handshaking. Renamed
non-Handshaking to Standard Handshaking
Product Selector Guide
Revised with renamed speed options and added Synchronous Access Time with
Reduced Wait-state Handshaking. Added Asynchronous Access Time.
Connection Diagram
Corrected pin numbers on bottom row.
Ordering Information
Revised with global changes. Revised Valid Combinations with updated ordering
information.
FBGA Capacitance
Added BGA Capacitance Table after Erase and Programming Performance.
Revision C (August 13, 2003)
Global
Updated formatting to new Spansion template. Changed data sheet status from
Advance Information to Preliminary.
Sector Lock/Unlock Command Sequence
Modified description of write cycles.
Reset Command
Modified last paragraph of section.
Table 13, Command Definitions
Added note references to Erase Suspend and Sector Lock/Unlock rows in table.
Replaced addresses “XXX” with “BA” in first and second cycles of Sector Lock/Unlock table row. Modified description of BA in legend.
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Revision C + 1 (October 1, 2003)
DC Characteristics - CMOS Compatible
Added note #2. Modified column heading from Test Conditions (Note 1) to Test
Conditions (Note 1,2)
Revision C2 (May 9, 2006)
Added migration and obsolescence information.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with abovementioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels
and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those product.
Trademarks
Copyright © 2001–2006 Spansion LLC. All Rights Reserved.
Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion LLC. Other names are for informational
purposes only and may be trademarks of their respective owners.
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