Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V TC = 80 °C IC,nom. 200 A TC = 25 °C IC 370 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 400 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 1470 W VGES +/- 20V V IF 200 A IFRM 400 A 2 I t 6,84 kA2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. - 2,1 2,6 V - 2,4 t.b.d. V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 200A, V GE = 15V, Tvj = 25°C VCE sat IC = 200A, V GE = 15V, Tvj = 125°C max. Gate-Schwellenspannung gate threshold voltage IC = 8mA, V CE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V...+15V QG - t.b.d. - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 13 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - t.b.d. - nF VCE = 1200V, V GE = 0V, Tvj = 25°C ICES Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25°C prepared by: Mark Münzer date of publication: 12.02.1999 approved by: Jens Thurau revision: 1 1(8) IGES - 20 500 µA - 500 - µA - - 400 nA DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) td,on VGE = ±15V, RG = 4,7Ω, Tvj = 25°C tr VGE = ±15V, RG = 4,7Ω, Tvj = 25°C td,off Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 200A, V CC = 600V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 200A, V CC = 600V, V GE = 15V RG = 4,7Ω, Tvj = 125°C, LS = 90nH - µs - 0,09 - µs - 0,09 - µs - 0,1 - µs - 0,54 - µs - 0,59 - µs tf - 0,06 - µs - 0,09 - µs Eon - 18 - mWs RG = 4,7Ω, Tvj = 125°C, LS = 90nH Eoff - 25 - mWs ISC - 1250 - A LsCE - 16 - nH RCC‘+EE‘ - 0,5 - mΩ min. typ. max. - 1,8 2,3 V - 1,7 t.b.d. V - 180 - A - 240 - A - 24 - µAs - 43 - µAs - 7 - mWs - 16 - mWs tP ≤ 10µsec, V GE ≤ 15V, R G = 4,7Ω TVj≤125°C, V CC=900V, V CEmax=VCES -LsCE ·dI/dt Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip 0,09 IC = 200A, V CC = 600V VGE = ±15V, RG = 4,7Ω, Tvj = 25°C VGE = ±15V, RG = 4,7Ω, Tvj = 125°C Kurzschlußverhalten SC Data - IC = 200A, V CC = 600V VGE = ±15V, RG = 4,7Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) max. IC = 200A, V CC = 600V VGE = ±15V, RG = 4,7Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 200A, V CC = 600V VGE = ±15V, RG = 4,7Ω, Tvj = 25°C VGE = ±15V, RG = 4,7Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) min. TC=25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 200A, V GE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 200A, - di F/dt = 2100A/µsec VF IF = 200A, V GE = 0V, Tvj = 125°C VR = 600V, VGE = -15V, T vj = 25°C IRM VR = 600V, VGE = -15V, T vj = 125°C Sperrverzögerungsladung recovered charge IF = 200A, - di F/dt = 2100A/µsec VR = 600V, VGE = -15V, T vj = 25°C Qr VR = 600V, VGE = -15V, T vj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - di F/dt = 2100A/µsec VR = 600V, VGE = -15V, T vj = 25°C VR = 600V, VGE = -15V, T vj = 125°C 2(8) Erec DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,085 K/W - - 0,15 K/W RthCK - 0,010 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 150 °C Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste = 1 W/m * K / λgrease = 1 W/m * K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung mounting torque screw M5 Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque 3 6 Nm terminals M6 2,5 5,0 Nm terminals M4 1,1 2,0 Nm Gewicht weight M1 G 300 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC Ausgangskennlinie (typisch) Output characteristic (typical) vorläufige Daten preliminary data IC = f (VCE) V GE = 15V 400 360 Tj = 25°C 320 Tj = 125°C IC [A] 280 240 200 160 120 80 40 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125°C 400 360 VGE = 17V 320 VGE = 15V VGE = 13V IC [A] 280 VGE = 11V VGE = 9V 240 VGE = 7V 200 160 120 80 40 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 400 360 Tj = 25°C 320 Tj = 125°C IC [A] 280 240 200 160 120 80 40 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 400 360 Tj = 25°C 320 Tj = 125°C IF [A] 280 240 200 160 120 80 40 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff = 4,7 Ω, VCE = 600V, T j = 125°C 70 Eoff 60 Eon Erec E [mJ] 50 40 30 20 10 0 0 40 80 120 160 200 240 280 320 360 400 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 200A , V CE = 600V , T j = 125°C 100 90 Eoff Eon 80 Erec 70 E [mJ] 60 50 40 30 20 10 0 0 5 10 15 20 25 30 RG [Ω] 6(8) DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) preliminary data 1 ZthJC [K / W] 0,1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 100 t [sec] 1 i ri [K/kW] : IGBT τi [sec] : IGBT ri [K/kW] : Diode τi [sec] : Diode 2 3 4 9,51 28,77 37,49 9,23 0,00002 0,004 0,048 0,500 19,63 51,99 56,73 21,65 0,002 0,03 0,072 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 4,7 Ohm, T vj= 125°C 450 400 350 IC [A] 300 IC,Modul 250 IC,Chip 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM200GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten Single Switch 62 preliminary data M6 28,5 13 23 16,1 22 ø6,4 1 2 4 3 5 24 20 2 29 93 106,4 1 5 3 IS6 8(8) DB_BSM200GA120DLC_V.xls