Siemens BSM200GAL120DN2 Igbt power module (single switch with chopper diode package with insulated metal base plate) Datasheet

BSM 200 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode
• Package with insulated metal base plate
Type
VCE
IC
BSM 200 GAL 120 DN2
1200V 290A
Package
Ordering Code
HALFBRIDGE GAL 2B C67070-A2301-A70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
290
TC = 80 °C
200
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
580
TC = 80 °C
400
Ptot
Power dissipation per IGBT
TC = 25 °C
W
1400
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.09
Diode thermal resistance, chip case
RthJCD
-
Diode thermal resistance, chip-case,chopper
RTHJCDC
Insulation test voltage, t = 1min.
Vis
Creepage distance
+ 150
°C
-55 ... + 150
K/W
≤ 0.125
2500
Vac
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
-
55 / 150 / 56
Jun-13-1996
BSM 200 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 8 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 200 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 200 A, Tj = 125 °C
-
3.1
3.7
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
3
4
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
12
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
nA
-
-
400
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 200 A
Input capacitance
108
nF
-
13
-
-
2
-
-
1
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Jun-13-1996
BSM 200 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω
Rise time
-
110
220
-
80
160
-
550
800
-
80
120
tr
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 200 A, VGE = 0 V, Tj = 25 °C
-
-
-
IF = 200 A, VGE = 0 V, Tj = 125 °C
-
-
-
Reverse recovery time
trr
µs
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
Reverse recovery charge
-
-
-
Qrr
µC
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs
Tj = 25 °C
-
-
-
Tj = 125 °C
-
-
-
Semiconductor Group
3
Jun-13-1996
BSM 200 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Chopper Diode
Chopper diode forward voltage
VFC
V
IFC = 300 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.8
IFC = 300 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time, chopper
trrC
ns
IFC = 300 A, VR = -600 V, VGE = 0 V
diF/dt = -2500 A/µs, Tj = 25 °C
Reverse recovery charge, chopper
-
500
-
QrrC
µC
IFC = 300 A, VR = -600 V, VGE = 0 V
diF/dt = -2500 A/µs
Tj = 25 °C
-
14
-
Tj = 125 °C
-
40
-
Semiconductor Group
4
Jun-13-1996
BSM 200 GAL 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
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