Siemens BSM25GAL120DN2 Igbt power module (single switch with chopper diode including fast free-wheeling diodes package with insulated metal base plate) Datasheet

BSM 25 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
VCE
IC
BSM 25 GAL 120 DN2
1200V 38A
Package
Ordering Code
HALF BRIDGE GAL 1 C67076-A2009-A70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
38
TC = 80 °C
25
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
76
TC = 80 °C
50
Ptot
Power dissipation per IGBT
TC = 25 °C
W
200
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.6
Diode thermal resistance, chip case
RthJCD
≤1
Diode thermal resistance, chip-case,chopper
RTHJCDC
≤ 0.8
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
+ 150
°C
-55 ... + 150
K/W
-
55 / 150 / 56
Mar-29-1996
BSM 25 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 1 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 25 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 25 A, Tj = 125 °C
-
3.1
3.7
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.5
0.8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
2
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
nA
-
-
180
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 25 A
Input capacitance
10
nF
-
1.65
-
-
0.25
-
-
0.11
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Mar-29-1996
BSM 25 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47 Ω
Rise time
-
75
150
-
65
130
-
420
600
-
50
75
tr
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 25 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.8
IF = 25 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time
trr
µs
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.13
-
Qrr
µC
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
-
2.3
-
Tj = 125 °C
-
6
-
Semiconductor Group
3
Mar-29-1996
BSM 25 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Chopper Diode
Chopper diode forward voltage
VFC
V
IFC = 35 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.8
IFC = 35 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time, chopper
trrC
ns
IFC = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge, chopper
-
250
-
QrrC
µC
IFC = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
-
2
-
Tj = 125 °C
-
5
-
Semiconductor Group
4
Mar-29-1996
BSM 25 GAL 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 190 g
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