BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 50 GD 120 DN2G 1200V 78A Package Ordering Code ECONOPACK 3 C67070-A2521-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 78 TC = 80 °C 50 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 156 TC = 80 °C 100 Ptot Power dissipation per IGBT TC = 25 °C W 400 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.35 Diode thermal resistance, chip case RthJCD ≤ 0.7 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 + 150 °C -55 ... + 150 K/W - 55 / 150 / 56 Aug-23-1996 BSM 50 GD 120 DN2G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 2 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 50 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 50 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.8 1 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 4 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 200 AC Characteristics Transconductance gfs VCE = 20 V, IC = 50 A Input capacitance 23 pF - 3300 - - 500 - - 220 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Aug-23-1996 BSM 50 GD 120 DN2G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 50 A RGon = 22 Ω Rise time - 44 100 - 56 100 - 380 500 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 50 A RGon = 22 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 50 A RGoff = 22 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 50 A RGoff = 22 Ω Free-Wheel Diode Diode forward voltage VF V IF = 50 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 50 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 50 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.2 - Qrr µC IF = 50 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 2.8 - Tj = 125 °C - 8 - Semiconductor Group 3 Aug-23-1996 BSM 50 GD 120 DN2G Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 450 A W tp = 14.0µs Ptot IC 350 10 2 300 100 µs 250 10 1 200 1 ms 150 10 ms 10 0 100 DC 50 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 75 A K/W 65 IC ZthJC 60 10 -1 55 50 45 40 10 -2 35 D = 0.50 30 0.20 0.10 25 10 -3 20 0.05 single pulse 0.02 15 0.01 10 5 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Aug-23-1996 BSM 50 GD 120 DN2G Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C IC 100 100 A A 80 70 17V 15V 13V 11V 9V 7V IC 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Aug-23-1996 BSM 50 GD 120 DN2G Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 50 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V 10 1 12 Ciss 10 8 10 0 6 Coss 4 Crss 2 0 0 40 80 120 160 200 240 280 10 -1 0 340 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Aug-23-1996 BSM 50 GD 120 DN2G Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A 10 3 10 4 ns t tdoff ns t tdoff 10 3 tr 10 2 tr tdon tf 10 2 tdon tf 10 1 0 20 40 60 80 A 10 1 0 120 20 40 60 80 IC Ω 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 50 A 25 25 Eon E mWs E mWs Eon 15 15 10 10 Eoff Eoff 5 0 0 5 20 40 60 80 A 120 IC Semiconductor Group 7 0 0 20 40 60 80 Ω 120 RG Aug-23-1996 BSM 50 GD 120 DN2G Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 100 A IF Diode K/W 80 ZthJC 10 -1 70 60 Tj=125°C Tj=25°C 50 10 -2 D = 0.50 0.20 40 0.10 30 10 -3 0.05 single pulse 0.02 20 0.01 10 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -4 -5 10 8 Aug-23-1996 BSM 50 GD 120 DN2G Circuit Diagram Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group 9 Aug-23-1996