PHILIPS BSP130 N-channel enhancement mode vertical d-mos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BSP130
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
FEATURES
BSP130
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown.
SYMBOL
CONDITIONS
MIN.
DESCRIPTION
1
gate
2
drain
3
source
4
drain
−
300
V
ID
DC drain current
−
300
mA
Ptot
total power
dissipation
up to Tamb = 25 °C −
1.5
W
±VGSO
gate-source voltage open drain
−
20
V
RDS(on)
drain-source
on-resistance
ID = 250 mA;
VGS = 10 V
−
8
Ω
VGS(off)
gate-source cut-off
voltage
ID = 1 mA;
VDS = VGS
0.8
2
V
d
4
handbook, halfpage
g
1
Top view
2
s
3
MAM054
Marking code
BSP130.
Fig.1 Simplified outline and symbol.
April 1995
UNIT
drain-source
voltage
PINNING - SOT223
PIN
MAX.
VDS
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 envelope, intended for use
as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.
PARAMETER
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage
±VGSO
gate-source voltage
ID
DC drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
Tj
CONDITIONS
MIN.
open drain
MAX.
UNIT
−
300
V
−
20
V
−
300
mA
−
1.4
A
−
1.5
W
storage temperature
−65
+150
°C
junction temperature
−
150
°C
up to Tamb = 25 °C; note 1
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
THERMAL RESISTANCE
from junction to ambient; note 1
83.3 K/W
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 µA; VGS = 0
300
−
−
V
±IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
100
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS
0.8
−
2
V
RDS(on)
drain-source on-resistance
ID = 20 mA; VGS = 2.4 V
−
7.9
14
Ω
ID = 250 mA; VGS = 10 V
−
6.7
8
Ω
IDSS
drain-source leakage current
VDS = 240 V; VGS = 0
−
−
100
nA
 Yfs
transfer admittance
ID = 250 mA; VDS = 25 V
200
380
−
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
−
57
90
pF
Coss
output capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
−
15
30
pF
Crss
feedback capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
−
2.6
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
−
2.5
10
ns
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 10 to 0 V
−
17
30
ns
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
VDD = 50 V
handbook, halfpage
BSP130
handbook, halfpage
90 %
INPUT
10 %
90 %
10 V
OUTPUT
ID
0V
50 Ω
10 %
MBB691
ton
toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
MRC218
2
MRC214
150
handbook, halfpage
handbook, halfpage
Ptot
C
(pF)
(W)
1.5
100
1
Ciss
50
0.5
Coss
Crss
0
0
0
50
100
150
Tj (°C)
200
0
5
10
15
25
20
VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 Power derating curve.
April 1995
Fig.5
4
Capacitance as a function of drain-source
voltage, typical values.
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
MRC217
1.2
handbook, halfpage
P = 1.5 W
ID
(A)
5V
4V
3.5 V
0.8
MRC223
1.2
handbook, halfpage
VGS = 10 V
ID
(A)
BSP130
0.8
3V
0.4
0.4
2.5 V
2V
0
0
0
4
8
VDS (V)
12
0
Tj = 25 °C.
4
8
VGS (V)
12
VDS = 10 V; Tj = 25 °C.
Fig.6 Typical output characteristics.
Fig.7 Typical transfer characteristics.
MRC219
30
MRC220
25
handbook, halfpage
handbook, halfpage
RDSon
VGS = 2 V
RDSon
(Ω)
2.5 V 3 V 3.5 V
(Ω)
20
4V
20
15
5V
10
10
10 V
5
0
10−2
10−1
1
ID (A)
0
10
0
April 1995
4
6
8
10
VGS (V)
VDS = 100 mV; Tj = 25 °C.
Tj = 25 °C.
Fig.8
2
Drain-source on-resistance as a function of
drain current, typical values.
Fig.9
5
Drain-source on-resistance as a function of
gate-source voltage, typical values.
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
MRC221
102
handbook, full pagewidth
δ=
0.75
0.5
Rth j-a
(K/W)
0.2
10
0.1
0.05
0.02
0.01
1
δ=
P
tp
T
0
t
tp
T
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
tp (s)
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
MRC222
10
handbook, halfpage
ID
(A)
1
tp =
10 µs
100 µs
1 ms
10 ms
(1)
10−1
100 ms
tp
δ= T
P
1s
DC
10−2
t
tp
T
10−3
10
1
102
VDS (V)
103
δ = 0.01; Tamb = 25 °C.
(1) RDS(on) limitation.
Fig.11 SOAR curve.
April 1995
6
103
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
MRC215
2.5
BSP130
MRC216
1.25
handbook, halfpage
handbook, halfpage
k
k
(1)
2
1
(2)
1.5
0.75
1
0.5
0.5
0.25
0
−50
0
50
100
Tj (°C)
0
−50
150
R DS(on) at T j
k = ----------------------------------------R DS(on) at 25 °C
50
100
Tj (°C)
150
V GS(th) at T j
k = ------------------------------------------ .
V GS(th) at 25 °C
Typical RDS(on);
(1) ID = 250 mA; VGS = 10 V.
(2) ID = 20 mA; VGS = 2.4 V.
Typical VGS(th) at 1 mA.
Fig.13 Temperature coefficient of gate-source
threshold voltage.
Fig.12 Temperature coefficient of drain-source
on-resistance.
April 1995
0
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
April 1995
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP130
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
10
BSP130
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
11
BSP130
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/1200/01/pp12
Date of release: April 1995
Document order number:
9397 750 02477
Similar pages