BSS 297 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 S Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage Values 200 V DGR RGS = 20 kΩ 200 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 25 °C A 0.48 IDpuls DC drain current, pulsed TA = 25 °C 1.92 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 1 1 12/05/1997 BSS 297 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 125 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V 200 - - 0.8 1.4 2 VDS = 200 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 °C - 8 50 VDS = 130 V, VGS = 0 V, Tj = 25 °C - - 100 Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) - 0.95 2 VGS = 4.5 V, ID = 0.45 A - 1.1 3.3 2 nA nA VGS = 10 V, ID = 0.45 A Semiconductor Group µA 12/05/1997 BSS 297 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.45 A Input capacitance 0.5 pF - 300 400 - 40 60 - 20 30 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.85 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Rise time - 8 12 - 15 25 - 120 160 - 50 70 tr VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 297 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 0.48 - - 1.92 VSD VGS = 0 V, IF = 0.96 A Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.85 1.1 12/05/1997 BSS 297 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 1.2 0.50 W A 1.0 Ptot ID 0.9 0.40 0.35 0.8 0.30 0.7 0.6 0.25 0.5 0.20 0.4 0.15 0.3 0.10 0.2 0.05 0.1 0.0 0 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 297 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C l 1.1 A ID ih Ptot = 1W g kj d fe 6.5 Ω c 0.8 0.7 0.6 0.5 0.4 a 0.3 b b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 RDS (on) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 c 1.5 0.2 1.0 0.1 V 0.0 0.0 5.0 e i j l ghkf VGS [V] = 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 b 5.5 VGS [V] a 2.0 0.9 a a 2.0 b 2.5 0.1 c 3.0 0.2 d 3.5 0.3 e f 4.0 4.5 0.4 g 5.0 0.5 h i 6.0 7.0 0.6 0.7 VDS k l 9.0 10.0 A 0.9 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max ID j 8.0 d Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 2.2 1.8 A S 1.8 gfs 1.4 1.6 1.2 1.4 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.0 0.4 0.8 1.2 1.6 A ID 2.2 12/05/1997 BSS 297 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.45 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 5.0 4.6 Ω V 4.0 RDS (on) 4.0 VGS(th) 3.6 3.5 3.2 3.0 2.8 2.4 98% 2.5 98% 2.0 2.0 typ 1.6 1.5 typ 1.2 2% 1.0 0.8 0.5 0.4 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 10 1 pF A Ciss C IF 10 2 10 0 Coss Crss 10 1 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 12/05/1997