SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 SEPTEMBER 95 ✪ COMPLIMENTARY TYPE - BSS63 PARTMARKING DETAIL - BSS64 - U3 BSS64R - U6 BSS64 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE 120 UNIT V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 100 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range t j:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 120 V IC=100µ A V(BR)CEO 80 V IC=4mA Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 50 µA nA VCB=90V VCB=90V,Tj=150oC Emitter Cut-Off Current IEBO 200 nA VEB=5V Collector-Emitter Saturation Voltage VCE(sat) 150 200 mV mV IC=4mA, IB=400µ A IC=50mA, IB=15mA Base-Emitter Saturation Voltage VBE(sat) 1.2 mV IC=4mA, IB=400µ A hFE Typ. 60 80 55 Static Forward Current Transition Frequency Output Capacitance 20 MAX. IC=1mA, VCE=-1V IC=10mA, VCE=1V IC=20mA, VCE=1V fT 60 Typ. 100 MHz VCE=10V, IC=4mA f=35 MHz Cobo Typ. 3 5 pF VCB=10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER