SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 ✪ PARTMARKING DETAIL BSS65 - L1 BSS65R - L5 BSS65 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -4 V Peak Pulse Current ICM -200 mA Continuous Collector Current IC -100 mA Base Current IC -50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. BreakdownVoltages V(BR)CEO -12 V IC=-10mA V(BR)CBO -12 V IC=-10µ A * V(BR)EBO -4 Cut-Off Currents TYP. MAX. V IE=-10µ A ICBO -100 nA VCB=-6V, IE=0 IEBO -100 nA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.25 V V IC=-10mA, IB=-1mA IC=-30mA, IB=-3mA Base-Emitter Saturation Voltage VBE(sat) -0.75 -0.82 -0.98 -1.20 V V IC=-10mA, IB=-1mA IC=-30mA, IB=-3mA Static Forward Current hFE Transfer Ratio 30 40 150 Transition Frequency fT 400 Collector-Base Capacitance Cobo Emitter Base Capacitance Cebo Switching Times Turn-On Time Turn-Off Time ton toff 23 34 IC=-10mA, VCE=-0.3V IC=-30mA, VCE=-0.5V MHz IC=-30mA, VCE=-10V, f=100MHz 6 pF VCB=-5V, IE=0, f=1MHz 6 pF VEB=-0.5V, IC=0, f=1MHz 60 90 nS nS IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V PAGE NUMBER