SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 SEPTEMBER 1995 ✪ PARTMARKING DETAILS BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -200 mA Continuous Collector Current IC -100 mA Base Current IB -50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range t j:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1mA Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-10µA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA Collector- Emitter Cut-off Current ICES -50 nA VCES=-30V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.40 V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 -0.95 V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* Static Forward Current Transfer Ratio BSS69 hFE 30 40 50 30 15 Static Forward Current Transfer Ratio BSS70 Transition Frequency BSS69 BSS70 hFE fT 60 80 100 60 30 150 IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, 300 IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, 200 250 MHz MHz IC=-10mA, VCE=-20V f=100MHz VCB=-5V, f=100kHz Collector-Base Capacitance Cobo 4.5 pF Emitter-Base Capacitance Cibo 10 pF VEB=-0.5V, f=100kHz Noise Figure N dB IC=-100µΑ, VCE=-5V RS=1kΩ, f=10Hz to15.7 kHz Switching times: Delay; Rise Storage Time Fall Time td; tf ts tf ns ns ns VCC=-3V, IC=-10mA IB1= IB2 =-1mA Typ. 5 35 225 70 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% PAGE NUMBER