Zetex BSS69R-L6 Sot23 pnp silicon planar medium power switching transistor Datasheet

SOT23 PNP SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
BSS69
BSS70
ISSUE 2 – SEPTEMBER 1995 ✪
PARTMARKING DETAILS —
BSS69 BSS70 BSS69R BSS70R -
L2
L3
L6
L7
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-200
mA
Continuous Collector Current
IC
-100
mA
Base Current
IB
-50
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
t j:tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
MAX. UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
-40
V
IC=-1mA
Collector-Base Breakdown Voltage
V(BR)CBO
-40
V
IC=-10µA
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µA
Collector- Emitter Cut-off Current
ICES
-50
nA
VCES=-30V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.25
-0.40
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
Base-Emitter Saturation Voltage
VBE(sat)
-0.65
-0.85
-0.95
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
Static Forward Current
Transfer Ratio
BSS69
hFE
30
40
50
30
15
Static Forward Current
Transfer Ratio
BSS70
Transition Frequency
BSS69
BSS70
hFE
fT
60
80
100
60
30
150
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
300
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
200
250
MHz
MHz
IC=-10mA, VCE=-20V
f=100MHz
VCB=-5V, f=100kHz
Collector-Base Capacitance
Cobo
4.5
pF
Emitter-Base Capacitance
Cibo
10
pF
VEB=-0.5V, f=100kHz
Noise Figure
N
dB
IC=-100µΑ, VCE=-5V
RS=1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
td; tf
ts
tf
ns
ns
ns
VCC=-3V, IC=-10mA
IB1= IB2 =-1mA
Typ. 5
35
225
70
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
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