Seme LAB BSS76 High voltage pnp silicon transistor Datasheet

P
BSS76
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
FEATURES
12.7 (0.500)
min.
• Hermetic Metal Package
0.48 (0.019)
0.41 (0.016)
dia.
• Screening Options Available
APPLICATIONS:
All Semelab hermetically sealed products can be processed in accordance
with the requirements of BS, CECC
and JAN specifications
2.54 (0.100)
Nom.
3
1
2
TO–18 (TO-206AA) PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-300V
VCEO
Collector – Emitter Voltage
-300V
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
PD
Total Device Dissipation
-5V
-0.5A
TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
TC = 25°C
Derate above 25°C
TJ , TSTG
Operating Junction & Storage Temperature Range
RθJC
Thermal Resistance, Junction – Case
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5747
Issue 1
SEME
BSS76
LAB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
V(BR)CEO
Parameter
Test Conditions
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage IC = -10mA
IB = 0
Min.
Typ.
Max.
-300
V(BR)CBO
Collector – Base Breakdown Voltage
IC = -100µA
IE = 0
-300
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 100µA
IC = 0
-6
ICBO
Collector Cut-off Current
VCB = -250V
IE = 0
-50
ICEO
Collector Cut-off Current
VCE = -300V
IB = 0
-500
IEBO
Emitter Cut-off Current
VBE = -5V
IC = 0
-50
VCE = -1V
IC = -1mA
30
45
VCE = -10V
IC = -10mA
35
50
VCE = -10V
IC = -30mA
35
55
VCE = -10V
IC = -100mA
IC = -10mA
IB = -1mA
-0.15
-0.3
IC = -30mA
IB = -3mA
-0.25
-0.4
IC = -10mA
IB = -1mA
-0.8
IC = -30mA
IB = -3mA
-0.9
IC = -20mA
VCE = -20V
Unit
V
nA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
150
—
40
V
V
DYNAMIC CHARACTERISTICS
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
Cib
Input Capacitance
ton
Turn–On Time
toff
Turn–Off Time
f = 20MHz
IE = 0
VCB = -20V
f = 1MHz
IC = 0
VEB = -0.5V
f = 1MHz
IB1 = -10mA
IC = -50mA
VCC = -100V
IB2 = -10mA
IC = -50mA
VCC = -100V
50
110
200
MHz
3.5
pF
45
100
ns
400
* Pulse Test: tp ≤ 300µs , d ≤ 2%.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5747
Issue 1
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