P BSS76 LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • Hermetic Metal Package 0.48 (0.019) 0.41 (0.016) dia. • Screening Options Available APPLICATIONS: All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN specifications 2.54 (0.100) Nom. 3 1 2 TO–18 (TO-206AA) PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -300V VCEO Collector – Emitter Voltage -300V VEBO Emitter – Base Voltage IC Continuous Collector Current PD Total Device Dissipation -5V -0.5A TA = 25°C Derate above 25°C PD Total Device Dissipation TC = 25°C Derate above 25°C TJ , TSTG Operating Junction & Storage Temperature Range RθJC Thermal Resistance, Junction – Case 0.5W 2.86mW/°C 2.5W 14.3mW/°C -65 to 200°C 70°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5747 Issue 1 SEME BSS76 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) V(BR)CEO Parameter Test Conditions OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = -10mA IB = 0 Min. Typ. Max. -300 V(BR)CBO Collector – Base Breakdown Voltage IC = -100µA IE = 0 -300 V(BR)EBO Emitter – Base Breakdown Voltage IE = 100µA IC = 0 -6 ICBO Collector Cut-off Current VCB = -250V IE = 0 -50 ICEO Collector Cut-off Current VCE = -300V IB = 0 -500 IEBO Emitter Cut-off Current VBE = -5V IC = 0 -50 VCE = -1V IC = -1mA 30 45 VCE = -10V IC = -10mA 35 50 VCE = -10V IC = -30mA 35 55 VCE = -10V IC = -100mA IC = -10mA IB = -1mA -0.15 -0.3 IC = -30mA IB = -3mA -0.25 -0.4 IC = -10mA IB = -1mA -0.8 IC = -30mA IB = -3mA -0.9 IC = -20mA VCE = -20V Unit V nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage 150 — 40 V V DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance ton Turn–On Time toff Turn–Off Time f = 20MHz IE = 0 VCB = -20V f = 1MHz IC = 0 VEB = -0.5V f = 1MHz IB1 = -10mA IC = -50mA VCC = -100V IB2 = -10mA IC = -50mA VCC = -100V 50 110 200 MHz 3.5 pF 45 100 ns 400 * Pulse Test: tp ≤ 300µs , d ≤ 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5747 Issue 1