SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 Peak Pulse Current ICM -800 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). V °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µ A Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector Cut-Off Current ICBO -10 -10 µA nA VCB=-50V, VCB=-50V, Ta=150oC Emitter Cut-Off Current IEBO -10 nA VBE=-3V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 mV V IC=-150mA,VCE=-10V IC=-150mA,VCE=-10V Static Forward Current Transfer Ratio Transition Frequency BSS80B BSS80C hFE 40 100 fT 200 MAX. UNIT IE=-10mA 120 300 IC=150mA,VCE=10V IC=150mA,VCE=10V MHz VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz Output Capacitance Cobo 8 pF Delay Time td 10 ns Rise Time tr 40 ns Storage Time ts 80 ns Fall Time tf 30 ns PAGE NUMBER VCC=-30V, IC=-150mA IB1=-IB2=-15mA