Infineon BSS816NW Optimosâ ¢2 small-signal-transistor Datasheet

BSS816NW
OptiMOS™2 Small-Signal-Transistor
Product Summary
Features
V DS
• N-channel
R DS(on),max
• Enhancement mode
• Ultra Logic level (1.8V rated)
20
V
V GS=2.5 V
160
mΩ
V GS=1.8 V
240
ID
1.4
A
• Avalanche rated
• Qualified according to AEC Q101
PG-SOT323
• 100% lead-free; RoHS compliant
3
1
2
Type
Package
Tape and Reel Information
BSS816NW
PG-SOT323 L6327: 3000 pcs/ reel
Marking
Lead Free
Packing
XCs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
1.4
T A=70 °C
1.1
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
5.6
Avalanche energy, single pulse
E AS
I D=1.4 A, R GS=25 Ω
3.7
Reverse diode dv /dt
dv /dt
I D=1.4 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
±8
V
Power dissipation1)
P tot
0.5
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
0 (<250V)
260 °C
IEC climatic category; DIN IEC 68-1
Rev 2.2
mJ
55/150/56
page 1
2009-02-11
BSS816NW
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint
1)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D= 250 µA
20
-
-
Gate threshold voltage
V GS(th)
V DS=0 V, I D=3.7 µA
0.3
0.55
0.75
Drain-source leakage current
I DSS
V DS=20 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=20 V, V GS=0 V,
T j=150 °C
-
-
100
V
µA
Gate-source leakage current
I GSS
V GS=8 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=1.8 V, I D=0.44 A
-
153
240
mΩ
V GS=2.5 V, I D=1.4 A
-
107
160
4.9
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=1.1 A
S
1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides
of the PCB.
Rev 2.2
page 2
2009-02-11
BSS816NW
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
126
180
-
47
67
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
7
10
Turn-on delay time
t d(on)
-
5.3
-
Rise time
tr
-
9.0
-
Turn-off delay time
t d(off)
-
11
-
Fall time
tf
-
2.2
-
Gate to source charge
Q gs
-
0.2
-
Gate to drain charge
Q gd
-
0.2
-
Gate charge total
Qg
-
0.6
-
Gate plateau voltage
V plateau
-
1.6
-
V
-
-
0.5
A
-
-
6
-
0.87
1.1
V
-
8.1
-
ns
-
1.4
-
nC
V GS=0 V, V DS=10 V,
f =1 MHz
V DD=10 V, V GS=2.5 V,
I D=1.4 A, R G=6 Ω
pF
ns
Gate Charge Characteristics
V DD=10 V, I D=1.4 A,
V GS=0 to 2.5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.2
T A=25 °C
V GS=0 V, I F=1.4 A,
T j=25 °C
V R=10 V, I F=1.4 A,
di F/dt =100 A/µs
page 3
2009-02-11
BSS816NW
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥2.5 V
1.5
0.5
1.25
0.375
I D [A]
P tot [W]
1
0.25
0.75
0.5
0.125
0.25
0
0
0
40
80
120
0
20
40
T A [°C]
60
80
100
120
140
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
103
1 µs
10 µs
1 ms 100 µs
10
0
0.5
102
10 ms
0.2
10
Z thJA [K/W]
I D [A]
0.1
-1
DC
0.05
10
1
0.02
0.01
single pulse
10-2
100
10-3
10
10-1
-2
10
-1
10
0
10
1
10
2
V DS [V]
Rev 2.2
10-5
10-4
10-3
10-2
10-1
100
101
102
t p [s]
page 4
2009-02-11
BSS816NW
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
3
400
2.5 V
1.3 V
2V
350
1.4 V
1.8 V
1.5 V
300
1.6 V
I D [A]
R DS(on) [mΩ]
2
1.6 V
1.8 V
250
200
150
2V
1
1.5 V
2.5 V
100
1.4 V
50
1.3 V
1.2 V
0
0
0.0
0.2
0.4
0.6
0.8
0
1.0
0.5
1
V DS [V]
1.5
2
2.5
3
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
10
1.5
8
1
I D [A]
g fs [S]
6
4
0.5
150 °C
2
25 °C
0
0
0
1
1
2
2
V GS [V]
Rev 2.2
0
1
2
3
4
I D [A]
page 5
2009-02-11
BSS816NW
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=1.4 A; V GS=2.5 V
V GS(th)=f(T j); V DS=VGS; I D=3.7 µA
parameter: I D
280
1.2
240
0.8
200
98%
160
V GS(th) [V]
R DS(on) [mΩ]
98%
typ
120
typ
0.4
2%
80
0
40
0
-0.4
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
101
25 °C
10
Ciss
0
102
150 °C, 98%
I F [A]
C [pF]
Coss
10-1
150 °C
101
25 °C, 98%
Crss
10-2
100
10-3
0
5
10
15
20
V DS [V]
Rev 2.2
0
0.2
0.4
0.6
0.8
1
1.2
V SD [V]
page 6
2009-02-11
BSS816NW
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=1.4 A pulsed
parameter: T j(start)
parameter: V DD
101
5
4.5
4
3.5
10 V
V GS [V]
I AV [A]
3
25 °C
100
100 °C
4V
2.5
2
16 V
1.5
125 °C
1
0.5
10-1
0
100
101
102
103
0
0.25
t AV [µs]
0.5
0.75
1
1.25
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
25
V GS
24
Qg
23
V BR(DSS) [V]
22
21
20
V g s(th)
19
18
Q g(th)
17
Q sw
Q gs
16
-60
-20
20
60
100
Q g ate
Q gd
140
T j [°C]
Rev 2.2
page 7
2009-02-11
BSS816NW
SOT323
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev 2.2
page 8
2009-02-11
BSS816NW
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.2
page 9
2009-02-11
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