isc Product Specification INCHANGE Semiconductor isc Triacs BT131-600D FEATURES ·With TO-92 package ·Glass passivated,sensitive gate triacs in a plastic envelope ·Intended for use in general purpose bidirectional switching and phase control applications. ·These devices are intended to be interfaced directly to microcontrollers,logic intergrated circuits and other low power gate trigger circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage 600 V IT(RMS) RMS on-state current (full sine wave) Tlead≤ 51℃ 1 A ITSM Non-repetitive peak on-state current 16 A PGM Peak gate power dissipation 5 W PG(AV) Average gate power dissipation 0.5 W Tj Operating junction temperature 110 ℃ -45~150 ℃ Tstg Storage temperature ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage ID=0.1mA 600 V VRRM Repetitive peak reverse voltage ID=0.5mA 600 V Off-state leakage current VD= VDRM(max), Tj= 125℃ ID CONDITIONS Gate trigger current Ⅱ Ⅲ VD=12V; IT= 0.1A VTM On-state voltage IT=1.6A IH Holding current IGT=0.1A ,VD= 12V Gate trigger voltage VD=12V ; RL=100Ωall quadrant isc website：www.iscsemi.cn 0.5 UNIT mA 5 5 mA 10 Ⅳ VGT MAX 5 Ⅰ IGT MIN 1.6 V 5 mA 1.5 V