Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1383L3 Description • The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3 SOT-223 C C B E B：Base C：Collector E：Emitter C B E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP Pd RθJA Tj Tstg Limits Unit 40 32 10 0.3 1.5 (Note 1) 1.5 (Note 2) 83.3 (Note 2) 150 -55~+150 V V V A A W °C/W °C °C Note : 1.Single pulse test, PW=10ms 2 .Device mounted on a glass epoxy printed circuit board 1.575 in × 1.575 in × 0.059 in : mounting pad for the collector lead min 0.93 in². BTD1383L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 32 10 10K 20K - Typ. 250 5 Max. 100 100 1.5 - Unit V V V nA nA V MHz pF Test Conditions IC=100µA IC=1mA, RBE=0Ω IE=100µA VCB=30V VEB=10V IC=200mA, IB=0.4mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTD1383L3 CYStek Product Specification Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 1000K Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=5V 100K VCE(SAT)@IC=1000IB 1000 100 10K 1 10 100 1 1000 1000 Power Derating Curve On Voltage vs Collector Current 2 Power Dissipation---PD(W) 10000 VBE(ON)@VCE=5V On Voltage --- (mV) 100 Collector Current ---IC(mA) Collector Current---IC(mA) 1000 1.5 See Note 2 on page 1 1 0.5 0 100 1 10 100 Collector Current ---IC(mA) BTD1383L3 10 1000 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) CYStek Product Specification Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-223 Dimension A Marking: B WA C 1 2 3 D E Style: Pin 1.Base 2.Collector 3.Emitter F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 o *13 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1383L3 CYStek Product Specification