STMicroelectronics BTW67-200 50a scr Datasheet

BTW67 and BTW69 Series
®
50A SCRS
STANDARD
Table 1: Main Features
A
Symbol
Value
Unit
IT(RMS)
50
A
VDRM/VRRM
600 to 1200
V
IGT
80
mA
G
K
K
G
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500VRMS), complying
with UL standards (file ref: E81734).
A
K
A
G
RD91
(BTW67)
TOP3 Ins.
(BTW69)
Table 2: Order Codes
Part Numbers
Marking
BTW67-xxx
BTW67xxx
BTW69-xxxRG
BTW69xxx
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
IT(RMS)
RMS on-state current
(180° conduction angle)
RD91
Tc = 70°C
TOP3 Ins.
Tc = 75°C
IT(AV)
Average on-state current
(180° conduction angle)
RD91
Tc = 70°C
TOP3 Ins.
Tc = 75°C
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
tp = 10 ms
Tj = 25°C
Value
Unit
50
A
32
A
610
580
A
I²t Value for fusing
Tj = 25°C
1680
A2S
dI/dt
Critical rate of rise of on-state current IG = 2
F = 60 Hz
x IGT , tr ≤ 100 ns
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
8
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
5
V
I ²t
PG(AV)
Tstg
Tj
VRGM
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
February 2006
REV. 5
1/6
BTW67 and BTW69 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
Value
RL = 33 Ω
VD = 12 V
VGT
VGD
VD = VDRM
RL = 3.3 kΩ
IH
IT = 500 mA
Gate open
IL
IG = 1.2 x IGT
Tj = 125°C
Unit
MIN.
8
MAX.
80
MAX.
1.3
V
MIN.
0.2
V
MAX.
150
mA
MAX.
200
mA
mA
dV/dt
VD = 67 % VDRM Gate open
Tj = 125°C
MIN.
1000
V/µs
VTM
ITM = 100 A
Tj = 25°C
MAX.
1.9
V
Vt0
Threshold voltage
Tj = 125°C
MAX.
1.0
V
Rd
Dynamic resistance
Tj = 125°C
MAX.
8.5
mΩ
10
µA
5
mA
Value
Unit
IDRM
IRRM
tp = 380 µs
Tj = 25°C
VDRM = VRRM
MAX.
Tj = 125°C
Table 5: Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case (D.C.)
Rth(j-a)
Junction to ambient (D.C.)
Figure 1: Maximum average power dissipation
versus average on-state current
RD91 (Insulated)
1.0
TOP3 Insulated
0.9
TOP3 Insulated
50
°C/W
Figure 2: Average and D.C. on-state current
versus case temperature
IT(AV)(A)
P(W)
60
55
50
α = 180°
D.C.
50
45
40
BTW69
BTW67
40
35
α = 180°
30
BTW69
30
25
20
20
15
BTW67
360°
10
10
5
IT(AV)(A)
0
5
10
15
Tcase(°C)
α
0
2/6
°C/W
20
25
30
0
35
0
25
50
75
100
125
BTW67 and BTW69 Series
Figure 3: Relative variation of
impedance versus pulse duration
thermal
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
K=[Zth/Rth]
2.5
1E+0
Zth(j-c)
2.0
1E-1
1.5
Zth(j-a)
BTW69
IGT
1.0
IH & IL
1E-2
0.5
Tj(°C)
tp(s)
1E-3
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5: Surge peak on-state current versus
number of cycles
-40
-20
0
20
40
60
80
100
120
140
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
ITSM(A), I2t (A2s)
ITSM(A)
600
5000
Tj initial = 25°C
550
500
ITSM
tp=10ms
450
400
Non repetitive
Tj initial=25°C
350
300
I2t
One cycle
1000
Repetitive
TC=75°C
250
200
150
dI/dt limitation
100
50
Number of cycles
tp(ms)
0
1
10
100
1000
100
0.01
0.10
1.00
10.00
Figure 7: On-state characteristics (maximum
values)
ITM(A)
600
Tj max.:
Vt0=1.0V
Rd=8.5mΩ
100
Tj=max
Tj=25°C
10
VTM(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/6
BTW67 and BTW69 Series
Figure 8: Ordering Information Scheme
BTW
69
-
600
RG
Standard SCR series
Type
67 = 50A in RD91
69 = 50A in TOP3
Voltage
600 = 600V
800 = 800V
1200 = 1200V
Packing mode
RG = Tube
Blanck = Bulk
Table 6: Product Selector
Part Numbers
Voltage (xxx)
Sensitivity
Package
X
80 mA
RD91
X
80 mA
TOP3 Ins.
600 V
800 V
1200 V
BTW67-xxx
X
X
BTW69-xxx
X
X
Figure 9: RD91 Package Mechanical Data
A2
L2
REF.
L1
B2
B1
C
C2
C1
A1
N1
N2
B
F
E3
I
A
4/6
A
A1
A2
B
B1
B2
C
C1
C2
E3
F
I
L1
L2
N1
N2
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
40.00
1.575
29.90
30.30
1.177
1.193
22.00
0.867
27.00
1.063
13.50
16.50
0.531
0.650
24.00
0.945
14.00
0.551
3.50
0.138
1.95
3.00
0.077
0.118
0.70
0.90
0.027
0.035
4.00
4.50
0.157
0.177
11.20
13.60
0.441
0.535
3.10
3.50
0.122
0.138
1.70
1.90
0.067
0.075
33°
43°
33°
43°
28°
38°
28°
38°
BTW67 and BTW69 Series
Figure 10: TOP3 Insulated Package Mechanical Data
DIMENSIONS
H
REF.
A
Millimeters
Min.
R
B
ØL
A
K
F
P
G
C
J
D
J
E
Typ.
4.4
Inches
Max.
Min.
Typ.
Max.
4.6
0.173
0.181
B
1.45
1.55 0.057
0.061
C
14.35
15.60 0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5 0.622
0.650
G
20.4
21.1 0.815
0.831
H
15.1
15.5 0.594
0.610
J
5.4
5.65 0.213
0.222
K
3.4
3.65 0.134
0.144
ØL
4.08
4.17 0.161
0.164
P
1.20
1.40 0.047
0.055
R
4.60
0.181
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 7: Ordering Information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BTW67-xxx
BTW67xxx
RD91
20 g
25
Bulk
BTW69-xxxRG
BTW69xxx
TOP3 Ins.
4.5 g
30
Tube
Note: xxx = voltage
Table 8: Revision History
Date
Revision
Apr-2001
4A
13-Feb-2006
5
Description of Changes
Last update.
TOP3 Insulated delivery mode changed from bulk to tube.
ECOPACK statement added.
5/6
BTW67 and BTW69 Series
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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6/6
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