STMicroelectronics BTW69-600 50a scr Datasheet

BTW67 and BTW69 Series
50A SCRs
STANDARD
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
50
A
V DRM/VRRM
600 to 1200
V
IGT
80
mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
RD91
(BTW67)
TOP3
(BTW69)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
Parameter
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
RD91
Tc = 70°C
TOP3 Ins.
Tc = 75°C
RD91
Tc = 70°C
TOP3 Ins.
Tc = 75°C
tp = 8.3 ms
Unit
50
A
32
A
610
Tj = 25°C
tp = 10 ms
I ²t
Value
I²t Value for fusing
A
580
Tj = 25°C
1680
A2 S
dI/dt
Critical rate of rise of on-state current IG =
2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
8
A
Tj = 125°C
1
W
PG(AV)
Average gate power dissipation
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage
5
V
April 2001 - Ed: 4
1/5
BTW67 and BTW69 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
IGT
RL = 33 Ω
VD = 12 V
VGT
VGD
Tj = 125°C
VD = VDRM RL = 3.3 kΩ
IH
IT = 500 mA
IL
IG = 1.2 I GT
Gate open
Unit
MIN.
8
MAX.
80
MAX.
1.3
V
MIN.
0.2
V
MAX.
150
mA
MAX.
200
mA
mA
dV/dt
VD = 67 % VDRM Gate open
Tj = 125°C
MIN.
1000
V/µs
VTM
ITM = 100 A
Tj = 25°C
MAX.
1.9
V
Vt0
Threshold voltage
Tj = 125°C
MAX.
1.0
V
Rd
Dynamic resistance
Tj = 125°C
MAX.
8.5
mΩ
Tj = 25°C
MAX.
10
µA
5
mA
IDRM
IRRM
tp = 380 µs
VDRM = VRRM
Tj = 125°C
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
Value
Unit
RD91 (Insulated)
1.0
°C/W
TOP3 Insulated
0.9
TOP3 Insulated
50
Sensitivity
Package
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
600 V
800 V
1200 V
BTW67-xxx
X
X
X
80 mA
RD91
BTW69-xxx
X
X
X
80 mA
TOP3 Ins.
ORDERING INFORMATION
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
BTW67-xxx
BTW67xxx
20.0 g
25
Bulk
BTW69-xxx
BTW69xxx
4.5 g
120
Bulk
Note: xxx = voltage
2/5
BTW67 and BTW69 Series
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2: Average and D.C. on-state current versus
case temperature.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
3/5
BTW67 and BTW69 Series
Fig. 7:
values).
On-state
characteristics
(maximum
PACKAGE MECHANICAL DATA
RD91 (Plastic)
DIMENSIONS
REF.
Millimeters
Min.
A
A1
A2
B
B1
B2
C
C1
C2
E3
F
I
L1
L2
N1
N2
4/5
29.90
13.50
1.95
0.70
4.00
11.20
3.10
1.70
33°
28°
Max.
40.00
30.30
22.00
27.00
16.50
24.00
14.00
3.50
3.00
0.90
4.50
13.60
3.50
1.90
43°
38°
Inches
Min.
1.177
0.531
0.077
0.027
0.157
0.441
0.122
0.067
33°
28°
Max.
1.575
1.193
0.867
1.063
0.650
0.945
0.551
0.138
0.118
0.035
0.177
0.535
0.138
0.075
43°
38°
BTW67 and BTW69 Series
PACKAGE MECHANICAL DATA
TOP3 Ins.(Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of
STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication
supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as
critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved
.
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