isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK453-100A/B DESCRIPTION ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application APPLICATIONS ·use in Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±30 V ID Ptot Tj Tstg Drain Current-continuou s@ TC=37℃ BUK453-100A 14 BUK453-100B 13 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 175 ℃ Storage Temperature Range 175 ℃ THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUK453-100A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VSD Diode Forward Voltage isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT V 4 BUK453-100A 0.16 BUK453-100B 0.2 V Ω ±100 nA VDS= 100V;VGS= 0 10 uA IF= 14A;VGS= 0 1.5 V 2 isc & iscsemi is registered trademark www.fineprint.cn