PHILIPS BUK454-200B Powermos transistor Datasheet

Philips Semiconductors
Product Specification
PowerMOS transistor
GENERAL DESCRIPTION
BUK454-200A/B
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a plastic
envelope suitable for use in surface
mount applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
general purpose switching
applications.
PINNING - TO220AB
PIN
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
PIN CONFIGURATION
DESCRIPTION
1
gate
2
drain
3
source
tab
SYMBOL
MAX.
UNIT
200
9.2
90
175
0.4
V
A
W
˚C
Ω
SYMBOL
d
tab
g
drain
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
RGS = 20 kΩ
-
-
200
200
30
V
V
V
ID
ID
IDM
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
-
Ptot
Tstg
Tj
Total power dissipation
Storage temperature
Junction Temperature
Tmb = 25 ˚C
-
- 55
-
-200A
9.2
6.5
36
-200B
8.2
5.8
33
A
A
A
90
175
175
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
February 1996
CONDITIONS
1
MIN.
TYP.
MAX.
UNIT
-
-
1.67
K/W
-
60
-
K/W
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-200A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
200
-
-
V
VDS = VGS; ID = 1 mA
VDS = 200 V; VGS = 0 V; Tj = 25 ˚C
VDS = 200 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK454-200A
BUK454-200B
ID = 3.5 A
2.1
-
3.0
1
0.1
10
0.35
0.4
4.0
10
1.0
100
0.4
0.5
V
µA
mA
nA
Ω
Ω
MIN.
TYP.
MAX.
UNIT
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 3.5 A
3.5
5.0
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
700
100
50
850
160
80
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 2.9 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
12
45
80
40
20
70
120
60
ns
ns
ns
ns
Ld
Internal drain inductance
-
3.5
-
nH
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
9.2
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 9.2 A ; VGS = 0 V
-
1.1
36
1.3
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 9.2 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
-
180
1.2
-
ns
µC
MIN.
TYP.
MAX.
UNIT
-
-
50
mJ
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 9 A ; VDD ≤ 100 V ;
VGS = 10 V ; RGS = 50 Ω
February 1996
2
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
120
BUK454-200A/B
Normalised Power Derating
PD%
10
Zth / (K/W)
BUKx54-lv
110
100
D=
90
80
1
0.5
70
0.2
60
50
0.1
40
0.1
0.05
30
tp
PD
0.02
D=
20
10
0
0
0
20
40
60
80 100
Tmb / C
120
140
160
0.01
1E-07
180
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
120
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
t
T
1E-05
tp
T
20
ID / A
110
BUK444-200A
8
10
20
VGS / V =
100
90
15
7
80
70
60
10
50
6
40
30
5
5
20
10
0
0
0
20
40
60
80 100
Tmb / C
120
140
160
180
ID / A
BUK454-200A,B
ID
S/
N)
=
VD
10
1.5
B
4
6
8
10 12
VDS / V
14
16
18
4
20
BUK454-200A
RDS(ON) / Ohm
A
O
(
DS
2
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
100
0
5.5
4.5 5
6
6.5
7
VGS / V =
7.5
tp = 10 us
8
1.0
R
100 us
1 ms
DC
1
10
0.5
10 ms
100 ms
0
0.1
1
10
100
VDS / V
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
February 1996
20
0
2
4
6
8
10 12
ID / A
14
16
18
20
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
3
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
20
BUK454-200A/B
ID / A
VGS(TO) / V
BUK454-200A
max.
4
Tj / C =
150
25
15
typ.
3
min.
10
2
5
0
1
0
0
2
4
6
8
10
-60
-20
20
VGS / V
gfs / S
100
140
180
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
6
60
Tj / C
BUK454-200A
5
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
1E-02
4
2%
1E-03
typ
98 %
3
1E-04
2
1E-05
1
1E-06
0
0
2
4
6
8
10 12
ID / A
14
16
18
0
20
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2
VGS / V
3
4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
1
10000
BUK4y4-200
C / pF
1000
Ciss
100
Coss
Crss
-60
-20
20
60
Tj / C
100
140
10
180
0
40
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.5 A; VGS = 10 V
February 1996
20
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-200A/B
BUK454-200
VGS / V
12
120
110
VDS / V =40
10
WDSS%
100
90
160
8
80
70
60
6
50
40
4
30
20
2
10
0
0
0
4
8
12
16
QG / nC
20
24
20
28
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 9 A; parameter VDS
20
IF / A
40
60
80
100
120
Tmb / C
140
160
180
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 9 A
BUK454-200A
VDD
+
L
15
VDS
-
VGS
10
-ID/100
Tj / C = 150
T.U.T.
0
5
RGS
25
R 01
shunt
0
0
1
VSDS / V
2
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
February 1996
5
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-200A/B
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
February 1996
6
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-200A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
7
Rev 1.000
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