J
, Dnc.
c/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUK552-100A/B
PowerMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
PINNING - TO220AB
SYMBOL
PARAMETER
VD,
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
BUK552
Is
f
°DS(ON)
PIN CONFIGURATION
DESCRIPTION
PIN
1
gate
2
drain
3
source
tab
QUICK REFERENCE DATA
drain
MAX.
MAX.
UNIT
-100A
100
10
60
175
0.28
-100B
100
8.5
60
175
0.35
V
A
W
°C
Q
SYMBOL
tab
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
vDS
k
+VGSM
PARAMETER
CONDITIONS
Drain-source voltage
Drain-gate voltage
RGS = 20 kQ
Gate-source voltage
Non-repetitive gate-source voltage tp < 50 jis
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
ID
ID
'DM
•tot
' stg
MIN.
MAX.
UNIT
100
100
15
20
V
V
V
V
-100A
10
7
40
Tmb = 25 °C
T m b =100'C
Tmb = 25 °C
Tmb = 25 °C
-100B
8.5
6
34
A
A
A
60
175
175
-55
W
°C
°C
'i
THERMAL RESISTANCES
SYMBOL
p
"^th j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
60
MAX.
UNIT
2.5
K/W
K/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Serni-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
PowerMOS transistor
Logic level FET
BUK552-100A7B
STATIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
MIN.
VOS = OV; ID = 0.25mA
100
VDS = Vcs; ID = 1 mA
VDS = 100 V; VGS = 0 V; J. = 25 "C
V D S =100V;V G S = OV;T^125-C
VGS = ±15V;V D S = OV
VGS = 5V;
BUK552-100A
ID = 5.5 A
BUK552-100B
1.0
1.5
1
0.1
10
0.25
0.3
2.0
10
1.0
100
0.28
0.35
V
^A
mA
nA
Q
ii
MIN.
TYP.
MAX.
UNIT
TYP.
MAX.
UNIT
V
DYNAMIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfa
ciss
Coss
crss
Forward transconductance
VDS = 25 V; ID = 5.5 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
Ld
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
*don
t,
tdoff
tf
4.5
~
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Q;
Rgen = 50 Q
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
6
-
S
400
90
35
600
120
50
PF
PF
PF
12
45
50
30
18
70
70
45
3.5
ns
ns
ns
ns
nH
4.5
nH
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
10
A
1.2
40
1.5
A
V
-
90
0.35
-
ns
HC
MIN.
TYP.
MAX.
UNIT
~
~
30
mJ
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
'DR
'DRM
VSD
trr
Qrr
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
IP =10 A; VGS = OV
l F =10A;-dl F /dt=100A/^is;
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
Drain-source non-repetitive
WDSS
undamped inductive turn-off
energy
CONDITIONS
ID = 1 0 A ; V D D < 5 0 V ;
VGS = 5 V ; RGS = 50 Q
PowerMOS transistor
Logic level FET
PD%
Jnn
BUK552-100A/B
Normalised Power Derating
Zth j-mb / (K/W)
1E+01
sX
s
80 -
s,
N
k,
S\
s
50 -
V|v
40
ss
s
10
0
20
Fig-1.
40
60
SO 100
Tmb / °C
120
ss
140
160
180
1E-02
1E-07
Normalised power dissipation.
ID%
1E-05
1E-03
t/s
ID /A
VUti
--- , =—
10 ^ ,^--^ —
f
/v=
s
•*• K.
^. "^L.
Ss
V,
X
ss
S
\
1
0
20
40
60
80
100
Tmb / °C
120
140
160
180
I D / / \I
.A
-^i
f: N
10-
{
B
§
\
S^
:!i^
\
^
"" DC
1-
/
^*~
7
ft w
f^
0 -I£.
(->
2
^^ ,
^
_. —,
1 tp=
3
4
6
8
10
Fig. 5 T>pical output characteristics, 7~ = 25 'C.
ID = f(VDS); parameter VGS
'-
1. 5
r
4
/ —
V 3S/\
10 u;
5
- ! ^00 us
^;
5
,
)
s
s
S
,---
0
TO
a
4
/ W> r*^
//, ys
W' -^
100
()
VDS/V
Fig.3. Safe operating area. Tmb = 25 °C
ID & IDM = f(VDs); IDM single pulse; parameter tp
Fig.t \
—- **•
^ =^ \ss b —
^=
:= Z=
==
s
1
j--'
RDS(ON)/Ohm
n-- —i—
-' jfy
'
——
?=•
VDS/V
Fig.2. Normalised continuous drain current.
ID% = 100-lo/lox c = f(Tmb); conditions: VGS>5V
100-
//
10
//
'/
//
''/ /^.
V,
S,
1E+01
Fig.4. Transient thermal impedance.
, = W); parameter D = t/T
Normalised Current Derating
•v •s
1E-01
2
4
6
8
J
>
—• ^* ^-=b=
10 12
ID /A
7
/
s*
^
*-~"
r-" ^
1
/
-^
^-*
^-~
r—
11
t— -
14
16
18
20
Typical on-state resistance, Tj = 25 °C.
Rostov = Wo); parameter VGS
BUK552-100A/B
PowerMOS transistor
Logic level FET
VGS(TO)/V
-n
/
ID/A
:z5/
/
/
T//C
/
//
//
/
/ ,'
/
/
/-
^'
"•*- =^,
...
/ / 1hll
~"~-- -~_^
'
^^ •^—
"-- -,— __
~-~^ _^
""-- '^^
~~~--
min.
"~^ -~-^
~^-
4
VGS/V
6
8
-60
-20
gfs/S
—
/
60
--, ~~,
5UB- THR -.SH( -)LD CON DUG noN
ID/t \
=
"X
^
s
1
1E-03
2%
ty
j
/
/f
/
1E-04
I
-
ry
'y=
L=
IE-OS -
/
i
^
/
2
Fig. 8.
4
6
B
10 12
ID / A
14
16
18
20
Typical transconductance, T, = 25 'C.
9* = Wo); conditions: VDS = 25V
a
0
^~- _—•
//
/
/
>
/
/
/
0.4
0.8
1.2
VGS/V
WOOOi
1
=lm
1,6
$-~—
60
Tjl °C
100
2
2A
— Ciss
100- \
—^^
^
20
•-/--
1000
0.4
-20
^
!8%
C/pF
-—
'
-60
Lj
^^
^
^,
gs
Fig. 1 1. Sub-threshold drain current.
ID - f(VGs>; conditions: Tt = 25 °C; VDS = VGS
Normalised RDS(ON) = 1(Tj)
i s
^_l_
^
1E-02 i=l
~^ ~-~,
f
0
780
140
-/-
•~- -^,
L/
100
"C
Fig. 10. Gate threshold voltage.
VGSITO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
^--
20
Tj/
Fig. 7. Typical transfer characteristics.
lD = f(VGS) ; conditions: VDS = 25 V; parameter Tt
i
-•-..
•~~~. •—
"~ --..~—
._
2
X
^
—-,
~-~- typ.
/
/
//
77
/
i/
^*
0
"--.
•--,
//L_
/
//
s/
max.
'
^^
140
180
Fig. 9. Normalised drain-source on-state resistance.
a = f^os(ON/^DS(QN)2s 'c = f(Tj); ID = 5.5 A; VGS = 5 V
0
,
—_ •—
20
— Coss
-— Cres
40
VDS/V
Fig. 12. Typical capacitances, Ciss, Coss, Cres.
C = f(VDS); conditions: VBS = 0 V; f= 1 MHz