LF PA K BUK7Y9R9-80E N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 20 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 89 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 195 W VGS = 10 V; ID = 25 A; Tj = 25 °C; - 7.3 9.9 mΩ - 14.4 - nC Static characteristics RDSon drain-source on-state resistance Fig. 11 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 64 V; Fig. 13; Fig. 14 Scan or click this QR code to view the latest information for this product BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G S mbb076 1 2 3 4 LFPAK; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package BUK7Y9R9-80E Name Description Version LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code BUK7Y9R9-80E 79E980 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V VDGR drain-gate voltage RGS = 20 kΩ - 80 V VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - 89 A Tmb = 100 °C; VGS = 10 V; Fig. 1 - 63 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 354 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 195 W Tstg storage temperature -55 175 °C BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 2 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 Symbol Parameter Conditions Tj junction temperature Min Max Unit -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 89 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 354 A - 106 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 89 A; Vsup ≤ 80 V; RGS = 50 Ω; [1][2] VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aai865 100 ID (A) 03aa16 120 Pder (%) 80 80 60 40 40 20 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Continuous drain current as a function of mounting base temperature BUK7Y9R9-80E Product data sheet Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 20 February 2013 50 © NXP B.V. 2013. All rights reserved 3 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 003aai866 103 IAL (A) 102 10 (1) (2) 1 (3) 10-1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 003aai867 103 ID (A) Limit RDSon = VDS / ID 10 2 tp =10 µ s 100 µ s 10 DC 1 1 ms 10 ms 100 ms 10-1 10-1 Fig. 4. 1 10 102 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 0.77 K/W BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 4 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 003aai583 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 P 0.02 10-2 tp δ= T single shot tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 t T 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 72 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V - - 4.5 V 1 - - V VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.13 10 µA VDS = 80 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; - - 24.9 mΩ - 7.3 9.9 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 64 V; VGS = 10 V; - 51.6 - nC QGS gate-source charge Fig. 13; Fig. 14 - 14.1 - nC QGD gate-drain charge - 14.4 - nC BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 5 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 3200 4266 pF Coss output capacitance Tj = 25 °C; Fig. 15 - 303 364 pF Crss reverse transfer capacitance - 165 226 pF td(on) turn-on delay time VDS = 60 V; RL = 2.4 Ω; VGS = 10 V; - 15 - ns tr rise time RG(ext) = 5 Ω - 23 - ns td(off) turn-off delay time - 34 - ns tf fall time - 21 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.83 1.2 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 35 - ns recovered charge VDS = 25 V - 52 - nC Qr 003aai869 100 10 ID (A) 6 ID (A) 5.5 80 003aai872 200 150 60 100 5 40 20 50 4.5 Tj = 175 °C Tj = 25 °C VGS (V) = 4 0 0 2 4 6 8 VDS (V) 0 10 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values BUK7Y9R9-80E Product data sheet 0 4 6 VGS (V) 8 Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 February 2013 2 © NXP B.V. 2013. All rights reserved 6 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 003aai870 30 003aah027 5 VGS(th) (V) RDSon (mΩ ) max 4 20 3 typ 2 min 10 1 0 Fig. 8. 0 5 10 15 VGS (V) 0 -60 20 Drain-source on-state resistance as a function of gate-source voltage; typical values Fig. 9. 003aah028 10-1 120 T j (°C) 180 003aai875 5 RDSon (mΩ) 10-2 60 Gate-source threshold voltage as a function of junction temperature 20 ID (A) 0 5.5 6 15 min 10-3 typ max 7 10 10-4 VGS (V) = 10 5 10-5 10-6 0 2 4 VGS (V) 0 6 Fig. 10. Sub-threshold drain current as a function of gate-source voltage BUK7Y9R9-80E Product data sheet 0 20 40 60 80 ID (A) 100 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 7 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 003aaj322 3 003aai877 10 VGS (V) a 2.4 8 1.8 6 1.2 4 0.6 2 0 -60 0 60 120 Tj (°C) 0 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature VDS = 14V 0 20 VDS = 64V 40 Fig. 13. Gate-source voltage as a function of gate charge; typical values 003aai878 104 VDS ID 60 QG (nC) Ciss C (pF) VGS(pl) VGS(th) 103 VGS QGS1 QGS2 QGS Coss QGD QG(tot) Crss 003aaa508 Fig. 14. Gate charge waveform definitions 102 10-1 1 10 VDS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 8 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 003aai879 80 IS (A) 60 40 20 Tj = 175°C 0 0 0.4 Tj = 25 °C 0.8 VSD(V) 1.2 Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 9 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 0 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-03-16 11-03-25 MO-235 Fig. 17. Package outline LFPAK; Power-SO8 (SOT669) BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 10 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 11 / 13 BUK7Y9R9-80E NXP Semiconductors N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 February 2013 BUK7Y9R9-80E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 13 / 13