BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 307 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67078-A4201-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 35 TC = 90 °C 23 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 70 TC = 90 °C 46 EAS Avalanche energy, single pulse mJ IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C 23 Ptot Power dissipation TC = 25 °C W 310 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Dec-07-1995 BUP 307 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance ≤ 0.4 RthJC IGBT thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.1 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.8 3.3 VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.8 4.3 VGE = 15 V, IC = 15 A, Tj = 150 °C - 4 4.5 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES µA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1 250 VCE = 1000 V, VGE = 0 V, Tj = 125 °C - - 1000 Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - 0.1 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 15 A Input capacitance 5.5 pF - 2000 2700 - 160 240 - 65 100 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 8 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Dec-07-1995 BUP 307 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Ω Rise time - 30 45 - 22 35 - 230 310 - 20 28 tr VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Total turn-off loss energy Eoff mWs VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Semiconductor Group - 3 1.7 - Dec-07-1995 BUP 307 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Ptot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 320 36 W A IC 240 28 24 200 20 160 16 120 12 80 8 40 4 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 t = 3.5µs p 10 µs A 160 TC K/W IC ZthJC 100 µs 10 1 10 -1 1 ms D = 0.50 0.20 10 ms 10 0 10 -2 0.10 0.05 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 10 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Dec-07-1995 BUP 307 Typ. output characteristics Typ. transfer characteristics IC = f(VCE) IC = f (VGE) parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) VCE(sat) = f (VGE) parameter: Tj = 25 °C parameter: Tj = 125 °C Semiconductor Group 5 Dec-07-1995 BUP 307 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 20 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 20 V VGE 16 400 V 800 V 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 nC 180 Q Gate Typ. switching time t = f(RG) inductive load, with freewheel diode BYP 102 parameter: Tj = 125 °C, VCE = 600 V, VGE = ± 15 V, IC = 10 A Semiconductor Group 6 Dec-07-1995 BUP 307 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 7 Dec-07-1995