Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time VBE = 0 V PINNING - TO220AB PIN 1 base 2 collector 3 emitter tab MAX. UNIT - 850 400 5 10 100 2.0 0.1 V V A A W V µs Tmb ≤ 25 ˚C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.3 A PIN CONFIGURATION DESCRIPTION TYP. SYMBOL c tab b collector e 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 850 400 5 10 2 4 100 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT - 1.25 K/W - 60 K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient March 1996 CONDITIONS in free air 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES ICES Collector cut-off current IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain hFE Gain bands2 (Acceptance limits) 1 2 3 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 9.0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 3.0 A;IB = 0.4 A IC = 3.0 A;IB = 0.4 A IC = 1.0 A; VCE = 2 V IC = 3.0 A; VCE = 2 V IC = 1.0 A; VCE = 2 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 400 - 10.0 - mA V 13 7.5 0.8 21 11 2.0 1.3 30 - V V 13 18 23 - 20 25 30 TYP. MAX. UNIT 1.5 0.5 2.0 0.8 µs µs 1.0 60 1.2 100 µs ns 1.1 120 1.4 250 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ts tf Switching times resistive load Turn-off storage time Turn-off fall time ICon = 3.0 A; IBon = 0.3 A; -IBoff = 0.6 A Switching times inductive load ICon = 3.0 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V ts tf Turn-off storage time Turn-off fall time ts tf Turn-off storage time Turn-off fall time ICon = 3.0 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). 2 Gain Banding. Product is divided into 3 gain bands for matching purposes. The gain band is printed on the device. All devices within a device rail will be from the same gain band. However, a box may contain rails from more than one band. Band quantities are shown on the box label. It is not possible to order specific gain bands. March 1996 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.4. Switching times waveforms with resistive load. Fig.1. Test circuit for VCEOsust. VCC IC / mA LC 250 200 IBon LB 100 T.U.T. -VBB 0 min VCE / V VCEOsust Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V;LB = 1 uH Fig.2. Oscilloscope display for VCEOsust. VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. ts toff tp IB tf t IBon T t -IBoff Fig.6. Switching times waveforms with inductive load. Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. March 1996 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor VCEsat / V Normalised Power Derating PD% 120 BUT211 1 110 0.9 100 90 IC/IB= 12 10 8 0.8 80 0.7 70 0.6 60 50 0.5 0.4 40 Tj = 25 C Tj = 125 C 0.3 30 0.2 20 10 0.1 0 0 0 20 40 60 80 100 Tmb / C 120 140 Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) 10 0.1 1 IC / A 10 Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB VBEsat / V Zth / (K/W) 1.2 Tj = 25 C Tj = 125 C 1.1 1 1 D= 0.5 0.9 0.2 0.1 0.05 0.02 0 0.1 PD tp D= tp IC = 5A 3A 2A 0.8 T 0.7 T 0.01 1E-06 t 0.6 1E-04 1E-02 t/s 0 1E+00 0.4 0.8 1.2 IB / A 1.6 2 2.4 Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC Fig.8. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VCEsat / V VBEsat / V 1.2 10 Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C 1.1 1 0.9 5A 0.8 1 0.7 0.6 0.5 0.4 3A IC/IB= 8 10 12 0.1 1 IC / A IC=2A 0.1 10 Fig.9. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB March 1996 0.1 1 IB / A 10 Fig.12. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 h FE IC / A 6 100 5V 5 4 1V 3 10 2 Tj = 25 C Tj = 125 C 1 0 1 0.01 0.1 1 10 0 200 400 600 800 1000 VCE / V IC / A Fig.15. Reverse bias safe operating area. Tj ≤ Tj max Fig.13. Typical DC current gain. hFE = f(IC) parameter VCE IC / A VCC 100 LC = 0.01 tp = ICMmax 10 VCL 10 us IBon 100 us -VBB ICmax 1 LB T.U.T. 500 us Fig.16. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V LC = 200 µH; VCL ≤ 850 V; LB = 1 µH II 2 ms I 0.1 10 ms DC 0.01 1 10 100 1000 VCE / V Fig.14. Forward bias safe operating area. Tmb = 25˚C I II NB: March 1996 Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1996 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1996 7 Rev 1.100