isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BUX78A DESCRIPTION ·Contunuous Collector Current-IC= -8A ·Collector Power Dissipation: PC= 50W @TC= 25℃ ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -80V(Min) APPLICATIONS ·Designed for use in switching regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~175 ℃ MAX UNIT 2.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BUX78A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 -80 V Collector-Emitter Voltage IC= -2mA; VBE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VBE(on) Base-Emitter On Voltage IC= -5A; IB= -0.5A -1.3 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 -10 μA ICBO Collector Cutoff Current VCB= -80V; IE= 0 VCB= -80V; IE= 0, TC=150℃ -0.5 -150 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.5 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 70 hFE-2 DC Current Gain IC= -2A; VCE= -5V 50 hFE-3 DC Current Gain IC= -5A; VCE= -5V 30 hFE-4 DC Current Gain IC= -1A; VCE= -5V; TC= -40℃ 25 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 1.5 VCES fT CONDITIONS MIN MAX UNIT 120 MHz Switching Times tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= -5A; IB1= -IB2= -0.5A; VCC= -40V 2 0.2 μs 2.0 μs 0.2 μs