isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ78 DESCRIPTION ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 1.5 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature -55-150 ℃ Storage Temperature Range -55-150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ78 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 800 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1A IGSS Gate Source Leakage Current IDSS VSD MAX UNIT V 4 V 8 Ω VGS= ±20V;VDS= 0 ±00 nA Zero Gate Voltage Drain Current VDS= 800VGS= 0 250 uA Diode Forward Voltage IF= 3A;VGS= 0 1.45 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn