Siemens BXY44-T2 Hirel silicon pin diode (hirel discrete and microwave semiconductor current controlled rf resistor for rf attenuators and switches) Datasheet

HiRel Silicon PIN Diode
BXY 44
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ Current controlled RF resistor for RF attenuators and
switches
¥ High reverse voltage
¥ Hermetically sealed microwave package
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5513/030
ESD:
T
Electrostatic discharge sensitive device, observe
handling precautions!
Type
BXY 44-T (ql)
Marking Ordering Pin
Pack.
Code
Configuration
see below
T
BXY 44-T1 (ql) -
see below
T1
BXY 44-T2 (ql) -
see below
T2
BXY 44-FP (ql) -
see below
FP
T1
T2
FP
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X148
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702X162
(see Chapter Order Instructions for ordering example)
Semiconductor Group
1
Draft A03 1998-04-01
BXY 44
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
VR
IF
Ptot
Top
Tstg
Tsol
Tj
Rth(j-c)
200
V
400
mA
500
mW
- 55 to + 150
°C
- 65 to + 175
°C
+ 235
°C
175
°C
Forward current
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
BXY 44-T
BXY 44-T1
BXY 44-T2
BXY 44-FP
Semiconductor Group
K/W
110
140
110
110
2
Draft A03 1998-04-01
BXY 44
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Reverse current 1
VR1 = 200 V
IR1
-
-
100
nA
Reverse current 2
VR2 = 100 V
IR2
-
-
5
nA
Forward voltage
IF = 100 mA
VF
-
1.0
1.05
V
Table 3
AC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min.
Total capacitance
VR = 50 V, f = 1 MHz
BXY 44-T, -T1, T2
BXY 44-FP
CT
Forward resistance
f = 100 MHz, IF1 = 10 mA
BXY 44-T, -T1, T2
BXY 44-FP
RF1
Forward resistance
f = 100 MHz, IF2 = 1 mA
BXY 44-T, -T1, T2
BXY 44-FP
RF2
Forward resistance
f = 100 MHz, IF3 = 10 mA
BXY 44-T, -T1, T2
BXY 44-FP
RF3
Minority carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
tL
Semiconductor Group
typ.
Unit
max.
pF
-
0.20
0.50
0.35
0.75
W
800
700
900
900
1300
1200
W
12
11
16
20
28
27
W
3
2.0
2.0
3.0
3.8
5.0
5.0
300
800
-
ns
Draft A03 1998-04-01
BXY 44
Order Instructions
Full type variant including package variant and quality level must be specified by the
orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies
device family and quality level only.
Ordering Form:
Ordering Code: QÉ
BXY44- (x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X162
BXY44-FP ES
For BXY44 in Flatpack Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: [email protected]
Semiconductor Group
4
Draft A03 1998-04-01
BXY 44
Figure 1
T Package
Symbol
Millimetre
min.
max.
A
1.30
1.45
B
1.15
1.35
C
-
0.40
Semiconductor Group
5
Draft A03 1998-04-01
BXY 44
Figure 2
T1 Package
Symbol
Millimetre
min.
max.
A
1.30
1.45
B
1.15
1.35
C
-
0.40
D
0.10
0.50
E
-
0.30
F
0.06
0.10
G
5.50
-
H
0.40
0.60
Semiconductor Group
6
Draft A03 1998-04-01
BXY 44
Figure 3
T2 Package
Symbol
Millimetre
min.
max.
ÆA
1.3
1.45
ÆB
2.0
2.20
C
0.6
1.25
D
0.08
0.20
Semiconductor Group
7
Draft A03 1998-04-01
BXY 44
Figure 4
FP Package
Symbol
Millimetre
min.
max.
B
3.10
3.55
B1
3.00
3.30
D
1.30
1.70
D1
0.55
0.65
d
0.10
0.15
d1
0.25
0.40
F
2.40
2.60
L
5.50
-
Semiconductor Group
8
Draft A03 1998-04-01
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