WTE BY133-T3 1.0a silicon rectifier Datasheet

BY133
W TE
PO WE R SEM IC O ND U C TO RS
1.0A SILICON RECTIFIER
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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!
!
!
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!
C
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
Marking: Type Number
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
BY133
Unit
VRRM
VRWM
VR
1300
V
VR(RMS)
910
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
half sine-wave superimposed on rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
1.0
V
@TA = 25°C
@TA = 100°C
IRM
5.0
50
µA
Cj
15
pF
RJA
50
K/W
Tj
-65 to +125
°C
TSTG
-65 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 75°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
BY133
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© 2002 Won-Top Electronics
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IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
40
60
80
100
120
140
160
1.0
0.1
Tj = 25ºC
PULSE WIDTH = 300µs
2% DUTY CYCLE
0.01
0.6
180
0.8
1.0
1.2
1.4
1.6
TA, AMBIENT TEMPERATURE (ºC)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve
Fig. 2 Typical Forward Characteristics
100
50
f = 1MHz
40
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Tj = 25ºC
30
20
10
10
8.3ms Single half sine-wave
JEDEC Method
0
1.0
1.0
BY133
10
1.0
100
10
NUMBER OF CYCLES AT 60 Hz
VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance
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100
© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.!
Package Type
Shipping Quantity
BY133-T3
DO-41
5000/Tape & Reel
BY133-TB
DO-41
5000/Tape & Box
BY133
DO-41
1000 Units/Box
Products listed in bold are WTE Preferred devices.
!
T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: [email protected]
Internet: http://www.wontop.com
BY133
We power your everyday.
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© 2002 Won-Top Electronics
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